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Award Data

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The Award database is continually updated throughout the year. As a result, data for FY23 is not expected to be complete until September, 2024.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. GAN UV/BLUE SOLID STATE LASER

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    Efficient blue and UV lasers are key to high density optical storage, novel communication systems, industrial and medical lasers, and specialized spectroscopic tools. By virtue of their direct bandgap (ranging from 2.09eV-InN to 3.44eV-GaN to 6.2eV-AlN) and lattice-matched heterostructure system, the III-V nitride-based semiconductors have the greatest potential to enable devices that will meet th ...

    SBIR Phase I 1994 Department of DefenseMissile Defense Agency
  2. BULK GROWTH OF GALLIUM NITRIDE SUBSTRATES

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    We propose a novel growth technique to produce low defect density GaN substrates - misfit dislocations will be greatly reduced and the defects due to thermal expansion mismatches will be eliminated. In Phase I the feasibility of the technology will be demonstrated. In Phase II, the process will be scalled and the substrates will be used to fabricate bright blue LEDs in collaboration with Hewlett-P ...

    SBIR Phase I 1994 Department of DefenseMissile Defense Agency
  3. HIGH POWER MOS TRANSISTOR

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    The ability to control large amounts of power (1-150kW) is necessary in applications ranging from aerospace to consumer electronics to industrial power systems and transportation. In order for silicon and gallium arsenide devices to meets such high power densities, tens of devices must be combined to meet the voltage and current requirements. Power combining networks, extra heatsinking and sophist ...

    SBIR Phase I 1994 Department of DefenseMissile Defense Agency
  4. High-Mobility Silicon-Carbide Electronics

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    Future aeropropulsion systems require high temperature electronics and integrated sensors to meet desired performance levels. The wide bandgap of silicon carbide (SiC) makes it ideally suited for high temperature operation. To date, virtually all SiC-based devices have been fabricated using 6H-SiC. Device performance would significantly increase if 3C-SiC, the cubic form, were available. 3C-SiC ha ...

    SBIR Phase I 1994 National Aeronautics and Space Administration
  5. Metalorganic Enhanced Ion Milling for BaSrTio3

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    The demand for higher performance semiconductor devices is pushing the limits of current materials technology. The development of a high dieletric constant capacitor material with 10 - 100 times the charge storage of SiO2 would allow a flat capacitor cell to be used in 256 Mb DRAMs, and simple stacked capacitors to be adopted for 1 and 4 Gb generations. IBM, TI and Micron have entered into an ARPA ...

    SBIR Phase I 1994 Department of DefenseDefense Advanced Research Projects Agency
  6. Superconductor Magnetic Memory

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    THE DEVELOPMENT OF A DENSE, FAST SUPERCONDUCTING MEMORY TECHNOLOGY WILL FACILITATE THE INTEGRATION OF SUPERCONDUCTING ELECTRONICS INTO SPACE AND ELECTONIC WARFARE SYSTEMS. A SUPERCONDUCTOR BASED MAGNETIC MEMORY TECHNOLOGY IS PROPOSED WHICH CAN BE USED TO FABRICATE MULTIMEGABIT SUPERCONDUCTOR MEMORIES WITHOUT REQUIRING LARGE SCALE INTEGRATION OF JOSPEHSON JUNCTIONS. THIS MEMORY WELL SUITED FOR HIGH ...

    SBIR Phase I 1994 Department of DefenseMissile Defense Agency
  7. Efficient Dopant Activation In P-type III-V Nitrides

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    THE AVAILABILITY OF EFFICIENT BLUE LIGHT EMITTERS WOULD BREAK OPEN COMMERCIAL AND DEFENSE MARKETS IN FULL COLOR DISPLAYS AND HIGH DENSITY OPTICAL STORAGE SYSTEMS. NITRIDE-BASED DEVICES HAVE THE GREATEST POTENTIAL AS HIGH EFFICIENCY EMITTERS BECAUSE OF THEIR DIRECT BANDGAP AND CONVENIENT HETEROSTRUCTURES SYSTEM. HOWEVER, THE LACK OF OF SUITABLE P-TYPE DOPING TECHNOLOGY HAS GREATLY HINDERED DEVELOPM ...

    SBIR Phase I 1994 Department of DefenseMissile Defense Agency
  8. COLD CATHODES FOR ELECTRON SPECTROSCOPY

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    THE DEVELOPMENT OF COLD ELECTRON EMITTER TECHNOLOGY HAS THE POTENTIAL FOR BROADLY IMPACTING THE RAPIDLY GROWING AREA OF ELECTRON SPECTROSCOPY. COMMERCIALLY AVAILABLE INSTRUMENTATION SUCH AS AUGER SPECTROMETERS TYPICALLY EMPLOY THERMIONIC ELECTRON SOURCES WHICH RESTRICT THEIR SCOPE OF USE THROUGH FILAMENT HEATING EFFECTS AND THERMAL CRACKING OF GASES ON FILAMENTS. THESE INSTRUMENTS ARE NOT CAPABL ...

    SBIR Phase I 1994 National Science Foundation
  9. Cost Effective Copper CVD Precursors for ULSI Devices

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    Chemical vapor deposition (CVD) of copper for vias and interconnects is critical to manufacture of next generation high speed ULSI devices and has been extensively investigated over the last few years. Although considerable progress has been made commercialization of this technology is currently impossible due to the high cost of the source reagents. In this Phase I program Advanced Technology Mat ...

    SBIR Phase I 1994 Department of DefenseDefense Advanced Research Projects Agency
  10. Isolation Techniques for High Temperature Integrated Sensor/Electronics Applications

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    Sensors and electronics will become increasingly pervassive as weight, fuel efficiency, cost and emissions requirements put increasing demands on vehicle technology. The development of high temperture, integrated sensors and electronics is necessary to cost-effectively address both civilian and military needs. The arrival of single crystal silicon carbide substrates and high quality epitaxial laye ...

    SBIR Phase I 1994 Department of DefenseDefense Advanced Research Projects Agency
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