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The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. Chemical Vapor Deposition of Beta-BaB2O4 (BBO) for Integrated Nonlinear Optics

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    The superior optical properties of BBO and its applicability in frequency doublers and waveguides justifies development of thin film deposition processes which can be integrated with microelectronic processing. The high damage threshold of BBO, a necessary component for device integrity, is a major advantage over other nonlinear optic materials. In Phase I, chemical precursors and a deposition pro ...

    SBIR Phase I 1995 Department of DefenseMissile Defense Agency
  2. Multi-Spectral Semiconductor Ultraviolet Detector

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    We propose to demonstrate the feasibility of solar-blind, multi-spectral III-V nitride UV detectors which can meet the requirements of applications in both the military and commercial sectors (missile threat warning, UV search and track, environmental monitoring in gas turbines, and general flame detection). A novel aspect of our approach is the use of SiC as a substrate for these devices, which w ...

    SBIR Phase I 1995 Department of DefenseMissile Defense Agency
  3. Chemical Vapor Desposition of PLZT for Low Cost SLM Manufacturing

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    Spatial light modulators (SLM's) have been identified as critical elements in many optical computing and signal processing applications. Typically these devices use expensive bulk ceramics that result in high cost and difficult device integration. Ceramic materials in the PbLaZrTiO3 (PLZT) family of compounds show a unique combination of high transparency, large electrooptic effects and exceptio ...

    SBIR Phase I 1995 Department of DefenseAir Force
  4. Gas-Phase Deposition of Low Dielectric Polymers

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    Phase I will develop a gas-phase process for the deposition of low dielectric constant polymers for use in integrated circuits. This process will utilize the firm's liquid delivery technology to deliver the reactants and grow films at high deposition rates. Polymerization will be induced by thermal activation on a heated substrate. This novel approach to polymeric film growth enables the depositio ...

    SBIR Phase I 1995 Department of DefenseMissile Defense Agency
  5. Radiation Tolerant Memory Device Materials

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    Radiation hardened ferroelectric random access memory (FRAM) devices have potential uses in numerous military applications. Until recently, FRAMs have relied on lead zirconate titanate (PZT) as the storage material. However, a new class of materials promises to offer higher device reliability and easier integration into existing technologies. SrBi2Ta209 has been identified as a material of choice ...

    SBIR Phase I 1995 Department of DefenseMissile Defense Agency
  6. Silicon Carbide UV Photodiode Arrays

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    UV diode detector arrays have a wide range of both commercial and military applications. Examples include spectral measurement and calibration, pollution monitoring, environmental change monitoring, remote sensing of earth resources, solar UV monitoring, burner monitoring in gas turbines, flame detection in furnaces and for fire detections, etc. SiC is one of the most promising material for UV di ...

    SBIR Phase I 1995 Department of Commerce
  7. Miniature Transducers for Microscopic Tissue Imaging

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    Ultrasonic imaging is potentially one of the most versatile diagnostic tools in medicine, yet it istransducer designs. New applications of acoustical microscopy, performed at frequencies above 200 MHminiature transducer geometries to enable in vivo applications and to enhance present in vitro capabtechniques will be used to create piezoceramic transducer elements with novel geometries. In Phase It ...

    SBIR Phase I 1995 Department of Health and Human Services
  8. HIGH TEMPERATURE INTEGRATED CAPACITORS

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    Next generation power electronic systems for military aircraft will require capacitors with reliable performance at temperatures from -55 up to 300 degrees C and beyond for filters, power converters and other control circuitry. Thin film integrated passive devices with lower dissipation and electrical leakage will also be needed, especially at high frequencies. Thin films have inherently high bre ...

    SBIR Phase I 1998 Department of DefenseAir Force
  9. Vandium Precursors for Semi-Insulating SiC Epilayers

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    Silicon carbide (SiC) is an ideal semiconductor material for high temperature, high frequency, and high power electronic devices. A SiC technology analogous to silicon - on -insulator (SOI) will be feasible if a suitable dopant precursor and epitaxial growth technique to produce semi-insulating SiC can be developed. Vanadium is an attractive dopant for the formation of semi-insulating SiC. In Phas ...

    SBIR Phase I 1998 Department of DefenseMissile Defense Agency
  10. Radiation hard, nonvolatile, NRDO memory elements

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    Metal-ferroelectric-semiconductor field effect transistors (MFS-FETs) have a can be used as nonvolatile memory devices. The primary ferroelectric materials for these devices are perovskite oxides such as lead zirconium titanate (PZT) and strontium bismuth tantalate (SBT). These materials contain highly mobile elements (Pb and Bi) that can interact with silicon at process temperatures and lead to a ...

    SBIR Phase I 1998 Department of DefenseMissile Defense Agency
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