Award Data

The superior optical properties of BBO and its applicability in frequency doublers and waveguides justifies development of thin film deposition processes which can be integrated with microelectronic processing. The high damage threshold of BBO, a necessary component for device integrity, is a major advantage over other nonlinear optic materials. In Phase I, chemical precursors and a deposition pro ...

We propose to demonstrate the feasibility of solar-blind, multi-spectral III-V nitride UV detectors which can meet the requirements of applications in both the military and commercial sectors (missile threat warning, UV search and track, environmental monitoring in gas turbines, and general flame detection). A novel aspect of our approach is the use of SiC as a substrate for these devices, which w ...

Spatial light modulators (SLM's) have been identified as critical elements in many optical computing and signal processing applications. Typically these devices use expensive bulk ceramics that result in high cost and difficult device integration. Ceramic materials in the PbLaZrTiO3 (PLZT) family of compounds show a unique combination of high transparency, large electrooptic effects and exceptio ...

Phase I will develop a gas-phase process for the deposition of low dielectric constant polymers for use in integrated circuits. This process will utilize the firm's liquid delivery technology to deliver the reactants and grow films at high deposition rates. Polymerization will be induced by thermal activation on a heated substrate. This novel approach to polymeric film growth enables the depositio ...

Radiation hardened ferroelectric random access memory (FRAM) devices have potential uses in numerous military applications. Until recently, FRAMs have relied on lead zirconate titanate (PZT) as the storage material. However, a new class of materials promises to offer higher device reliability and easier integration into existing technologies. SrBi2Ta209 has been identified as a material of choice ...

The III-V nitrides have recently emerged as the primary material system for UV/blue light emitters. Higher bandgap energy (Al,Ga)N alloys are currently employed as cladding layers for GaN and (In,Ga)N active region LEDs and laser structures. Lattice mismatch between the cladding and active regions, however, restricts both the thickness and composition of the layers which in turn limits the operati ...

Large power handling systems of 1KW to 150KW are required in a many applications ranging from aerospace to consumer electronics to industrial power systems and transportation. Conventional electronic systems, based on silicon or gallium arsenide devices, require a large number of devices enhanced with extra heat sinking and sophisticated control systems to ensure synchronous operation. The extra ...

UV diode detector arrays have a wide range of both commercial and military applications. Examples include spectral measurement and calibration, pollution monitoring, environmental change monitoring, remote sensing of earth resources, solar UV monitoring, burner monitoring in gas turbines, flame detection in furnaces and for fire detections, etc. SiC is one of the most promising material for UV di ...

Increasingly strict emissions requirements and the need to increase fuel economy and reduce service intervals have dramatically accelerated the use of monitor and control electronics in engines. traditional methods such as adjusting the air/fuel ratio to optimize catalyst performance are not effective enough to meet future requirements. Measurement of the pressure in each cylinder permits enhanc ...

Integration of many different devices on a single silicon carbide (SiC) substrate is necessary to realize the full potential of high temperature or high power devices for markets ranging from industrial and consumer to military systems to transportation power and control. Integration requires that the entire device package, individual devices, contacts and interconnect materials, be ...