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Award Data

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The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. BARRIER LAYER FOR EPITAXIAL BATIO3 FILMS ON SILICON

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    SINGLE CRYSTAL BATIO3 HAS ELECTRO-OPTIC AND PHOTOREFRACTIVE PROPERTIES THAT ARE AMONG THE MOST DESIRABLE OF ALL INORGANIC MEDIA. THE MATERIAL ALSO POSSESSES FERROELECTRIC PROPERTIES AND AN EXCEPTIONALLY HIGH DIELECTRIC CONSTANT, WHICH MAKE BATIO3 FILMS HIGHLY ATTRACTIVE FOR RADIATION HARD AND DRAM ELECTRONIC MEMORIES. USE OF BATIO3 FILMS FOR INTEGRATED ELECTRO-OPTICS WILL REQUIRE LOW OPTICAL LOSSE ...

    SBIR Phase I 1992 Department of DefenseAir Force
  2. Migration Enhanced of (SiC)x(AIN)1-x

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    The need for compact solid state ultraviolet light sources includes clinical light sources for a variety of surgeries, analytical instrumentation sources and communications systems based on shorter wavelengths that will be able to handle higher information densities. Such advanced optoelectric applications demand totally new materials. Of those available, silicon carbide is the most promising for ...

    SBIR Phase I 1992 Department of DefenseMissile Defense Agency
  3. ORGANOARSINE REPLACEMENTS FOR ARSINE IN MOCVD

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    ORGANOMETALLIC VAPOR PHASE EPITAXY (OMVPE) IS A PROMISING TECHNIQUE FOR PRODUCING ULTRAHIGH PURITY III-V COMPOUND SEMICONDUCTOR. OMVPE CAN PRODUCE COMPLEX LAYERED STRUCTURES WITH THE ABRUPT INTERFACES REQUIRED FOR ADVANCED ELECTRONIC AND PHOTONIC DEVICES. UNFORTUNATELY, OMVPE CURRENTLY REQUIRES EXTREMELY TOXIC AND/OR PYROPHORIC GASES STORED UNDER PRESSURE IN LARGE VOLUMES. THESE GASES REPRESENT SE ...

    SBIR Phase I 1992 Department of DefenseArmy
  4. BIMETALLIC SOURCE REAGENTS FOR THIN FILM DEPOSITION OF LEAD TITANATE AND PZT

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    METALORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD) HAS BECOME A SUCCESSFUL THIN FILM GROWTH TECHNIQUE DUE TO ITS INHERENT CONTROL OVER FILM COMPOSITION, PURITY, UNIFORMITY AND DEPOSITION RATE. THIN FILM TECHNOLOGY FOR FERROELECTRIC MATERIALS SUCH AS LEAD TITANATE AND PZT IS IN GREAT DEMAND DUE TO MANY APPLICATIONS IN PEIZOELECTRIC AND OPTOELECTRIC DEVICES. THE ELECTRONIC PROPERTIES OF THE THIN FILM AR ...

    SBIR Phase I 1992 Department of DefenseArmy
  5. Gas Microcontroller

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    Many key steps in semiconductor "chip" manufacture utilize gases to form thin films which are critical to both device performance and cost. Over $2 billion worth of equipment, materials and peripherals are now sold annually to the semiconductor manufacturers who use gas phase processing. As increased memory demands escalate the need for thinner films, higher quality and lower costs, ever more exac ...

    SBIR Phase I 1992 Department of DefenseMissile Defense Agency
  6. Low Loss Cryogenic Switching for Electronic Warfare

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    High temperature superconducting (HTSC) materials offer the potential for major cost and performance advantages in advanced high frequency communications and radar sytems. Key to the use of these materials in subsystems is the fabrication of components, especially low loss switches, which can replace standard components. Advanced Technology Materials, Inc., in conjunction with Harris Corporation, ...

    SBIR Phase I 1992 Department of DefenseMissile Defense Agency
  7. HTSCs as Electrodes in DRAMs

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    The continuing drive toward increased circuit densities in dynamic random access memories (DRAMs) has spurred great interest in new dielectric materials that permit greater storage capacitor charge density. Ferroelectrics are particularly attractive because of their intrinsically large dielectric constant, and non-volatile and radiation-hard memory capability. Application of ferroelectrics in micr ...

    SBIR Phase I 1992 Department of DefenseMissile Defense Agency
  8. Organoerbium Source Reagents for MOCVD of Erbium-Containing Alloys

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    The use of optoelectronic materials, such as gallium arsenide, in applications ranging from fiber optics to solid-state lasers has been growing rapidly. The fabrication of these materials requires exacting control over material composition, purity, uniformity and production rate. Typically these materials contain small amounts of rare earth dopants or impurities which are designated to enhance the ...

    SBIR Phase I 1992 Department of DefenseMissile Defense Agency
  9. Ferroelectric Films for IR Focal Plane Array Storage Capacitors

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    Infrared radiation sensing has grown rapidly as both a military and commercial detection and measurement technique. Recently the sensitivity of infrared detection has been improved by the used of focal plane arrays which have the capability of imaging scenes of very low contrast by collecting radiation over long periods of time. This technique can be dramatically enhanced by the use of new materia ...

    SBIR Phase I 1992 Department of DefenseMissile Defense Agency
  10. IN-SITU X-RAY DETECTOR

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    N/A

    SBIR Phase I 1992 Department of DefenseDefense Advanced Research Projects Agency
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