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The Award database is continually updated throughout the year. As a result, data for FY19 is not expected to be complete until April, 2020.
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High Efficiency, Large-Area, 1550 nm InGaAs Photodiodes
SBC: VOXTEL, INC. Topic: N/AA back-illuminated planar InGaAs photodiode tested to have 95% quantum effiiency (QE) at 1550 nm, area greater than 1 mm2, low capacitance (<23 pF), and high bandwidth (>125 MHz) will be improved. Although the existing Phase I device exhibited bulk material dark current generation better than commercially available devices, the sidewall-generated dark current was found to dominate the noise ...
SBIR Phase II 2010 Department of CommerceNational Institute of Standards and Technology
