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Award Data

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The Award database is continually updated throughout the year. As a result, data for FY20 is not expected to be complete until September, 2021.

  1. High Efficiency, Large-Area, 1550 nm InGaAs Photodiodes

    SBC: VOXTEL, INC.            Topic: N/A

    A back-illuminated planar InGaAs photodiode tested to have 95% quantum effiiency (QE) at 1550 nm, area greater than 1 mm2, low capacitance (<23 pF), and high bandwidth (>125 MHz) will be improved. Although the existing Phase I device exhibited bulk material dark current generation better than commercially available devices, the sidewall-generated dark current was found to dominate the noise ...

    SBIR Phase II 2010 Department of CommerceNational Institute of Standards and Technology
  2. SBIR Phase II:Directly Patternable Inorganic Hardmask for Nanolithography

    SBC: Inpria Corporation            Topic: EL

    This Small Business Innovation Research (SBIR) Phase II project aims to develop a robust, high-speed inorganic resist platform to revolutionize the manufacture of semiconductor devices with feature sizes < 30 nm. At present, there is no demonstrated organic or inorganic resist that satisfies all of the requirements - high speed, low line-width roughness (LWR), sufficient etch resistance - for patt ...

    SBIR Phase II 2010 National Science Foundation
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