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Award Data

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The Award database is continually updated throughout the year. As a result, data for FY20 is not expected to be complete until September, 2021.

  1. SBIR Phase II:Directly Patternable Inorganic Hardmask for Nanolithography

    SBC: Inpria Corporation            Topic: EL

    This Small Business Innovation Research (SBIR) Phase II project aims to develop a robust, high-speed inorganic resist platform to revolutionize the manufacture of semiconductor devices with feature sizes < 30 nm. At present, there is no demonstrated organic or inorganic resist that satisfies all of the requirements - high speed, low line-width roughness (LWR), sufficient etch resistance - for patt ...

    SBIR Phase II 2010 National Science Foundation
  2. High Efficiency, Large-Area, 1550 nm InGaAs Photodiodes

    SBC: VOXTEL, INC.            Topic: N/A

    A back-illuminated planar InGaAs photodiode tested to have 95% quantum effiiency (QE) at 1550 nm, area greater than 1 mm2, low capacitance (125 MHz) will be improved. Although the existing Phase I device exhibited bulk material dark current generation better than commercially available devices, the sidewall-generated dark current was found to dominate the noise equiva ...

    SBIR Phase II 2010 Department of CommerceNational Institute of Standards and Technology
  3. Rapid Scanning Near-Infrared/Infrared Spectrometer

    SBC: En'urga Inc.            Topic: N/A

    This project involves a feasibility study for a rapid scanning near-infrared/infrared spectrometer for transient, simultaneous measurements of CO2 and H20 concentrations, soot volume fractions and temperatures. Such measurements can lead to improved understanding of the structure of turbulent and laminar flames. A commercial instrument that can reliably provide simultaneous gas concentrtaion, so ...

    SBIR Phase II 1997 Department of Commerce
  4. SBIR Phase I: Marker Gene Directed Substrates for Cell Regulation

    SBC: MARKER GENE TECHNOLOGIES INC            Topic: N/A

    N/A

    SBIR Phase II 1997 National Science Foundation
  5. Factory-in-the-Computer

    SBC: Pritsker Corp.            Topic: N/A

    N/A

    SBIR Phase II 1997 National Science Foundation
  6. PASSIVATION OF III-V DEVICES

    SBC: Triquint Semiconductor Inc            Topic: N/A

    WHILE GAAS AND OTHER III-V COMPOUND SEMICONDUCTORS HAVE MANY DESIRABLE PROPERTIES, THEIR PRACTICAL USE HAS BEEN LIMITED BY THE POOR ELECTRICAL QUALITY OF THEIR SURFACES AND INTERFACES WITH OTHER MATERIALS. FOR EXAMPLE, IN CONTRAST TO THE ELECTRONIC PERFECTION OF THE SI-SIO2 INTERFACE, THE FORMATION OF OXIDES ON GAAS RESULTS IN A HIGH DENSITY OF SURFACE STATES THAT EFFECTIVELY PIN THE SURFACE FERM ...

    SBIR Phase II 1997 National Science Foundation
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