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The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. Phase-Stabilized 1-GHz Fiber-Laser Frequency Combs at 2~5um for Coherent Fourier Transform Spectroscopy

    SBC: ADVALUE PHOTONICS INC            Topic: N/A

    The GHz-rate phase-stabilized fiber-laser frequency comb system is proposed to be used as a light source for coherent Fourier transform spectroscopy. The system will be developed based on our proprietary glass/fiber technology, which features a low-cost, robust, highly stable, mid-infrared light source that enables the development of a robust portable c-FTIR spectrometer for absorption measurement ...

    SBIR Phase II 2010 Department of CommerceNational Institute of Standards and Technology
  2. Unmanned Aircraft System with Modular Payload Bays and Payload Interfaces

    SBC: Brock Technologies, Inc.            Topic: AF083006

    The Unmanned Systems market is exploding with applications, products and services. For example, an increasing number of Unmanned Aircraft Systems (UAS) are serving the military, commercial and research markets today. To better serve these markets, it would be beneficial if the beginning design stages of UAS development included the capability to support multiple sensors, payloads, and concept of o ...

    SBIR Phase II 2010 Department of DefenseAir Force
  3. A Rapid and Cost-Effective Approach to Nanostructural Analysis of Semiconductor Devices

    SBC: FABMETRIX INC            Topic: AF083170

    An expedited and economical nanostructural sampling and analysis of semiconductor devices will be crucial to accelerated product development and rapid introduction of these technologies to the market with a higher quality at a lower cost. The proposed effort aims to carry out the next phase of development activities, geared toward realization of the above objective. We successfully demonstrated ...

    SBIR Phase II 2010 Department of DefenseAir Force
  4. All-Fiber Infrared Raman Laser

    SBC: L2 Tech, Inc            Topic: AF083173

    In the Phase II program we will demonstrate a breadboard device of an innovative all-fiber infrared (IR) laser operating at selectable wavelengths in the 1.5 to 12 micron spectral region based on Stimulated Raman Scattering of hydrogen gas in an IR hollow-core photonic band-gap (PBG) fiber. The Raman laser is pumped by commercially available fiber laser at near-infrared wavelength. Its wavelength ...

    SBIR Phase II 2010 Department of DefenseAir Force
  5. Microsupercharger and/or Turbocharger for Small, Heavy Fuel Engines

    SBC: M-DOT Aerospace            Topic: OSD08UM2

    M-DOT proposes to team with engine developers and produce a turbocharger for an HFE that will support a range of power levels from 30 to 60 HP. The launch design application will be a heavy fuel conversion of the UAV Engines Ltd. Model 741 rotary. The higher end of the flow range will support power systems developed for Shadow C.

    SBIR Phase II 2010 Department of DefenseAir Force
  6. Efficient High-Power Tunable Terahertz Sources using Optical Techniques

    SBC: Microtech Instruments, Inc.            Topic: AF08T009

    The main objective of the proposed Phase II project is to leverage the technology of THz generation in resonantly-pumped quasi-phase-matched (QPM) GaAs structures, jointly developed by Stanford University and Microtech Instruments, Inc., and create a compact and power-efficient commercial THz source with a mW-level average power. This source will be continuously or step-tunable in the 0.5-3 THz ra ...

    STTR Phase II 2010 Department of DefenseAir Force
  7. Efficient high power tunable THz source based on all fiber-based pulsed fiber lasers at ~ 2 mm"

    SBC: N.P. PHOTONICS, INC.            Topic: AF08T009

    In Phase I, NP Photonics has successfully demonstrated the feasibility of a fiber-based THz source that can generate high power, narrow linewidth, and tunable THz radiation by leveraging NP’s proprietary unique fibers, fiber lasers/amplifiers, and THz techniques. In Phase II, we will develop the monolithic high power ~ 2 micron pulsed fiber laser system for the proposed fiber-based THz source un ...

    STTR Phase II 2010 Department of DefenseAir Force
  8. Single mode THz crystal fiber as efficient THz parametric converter

    SBC: N.P. PHOTONICS, INC.            Topic: AF083083

    In Phase I, NP Photonics has successfully demonstrated the feasibility to fabricate a single mode THz crystal fiber as THz parametric converter that can generate high power, narrow linewidth, and tunable THz source by leveraging our proprietary fiber processing techniques. In Phase II, we will further optimize the design and fabrication process of the proposed THz crystal fiber converter under col ...

    SBIR Phase II 2010 Department of DefenseAir Force
  9. Analysis of Distributed Control of Turbine Engines

    SBC: Scientific Monitoring, Inc.            Topic: AF08T026

    Scientific Monitoring, Inc. (SMI), Stanford University (SU) and Pratt and Whitney (PW) propose to conduct research to develop, implement, apply and realistically demonstrate new methods to analyze and predict the stability and performance of a distributed gas turbine engine control (DEC). The approach will be to develop the requirements for a DEC network. Then these requirements will be used to ...

    STTR Phase II 2010 Department of DefenseAir Force
  10. High Efficiency, Large-Area, 1550 nm InGaAs Photodiodes

    SBC: VOXTEL, INC.            Topic: N/A

    A back-illuminated planar InGaAs photodiode tested to have 95% quantum effiiency (QE) at 1550 nm, area greater than 1 mm2, low capacitance (125 MHz) will be improved. Although the existing Phase I device exhibited bulk material dark current generation better than commercially available devices, the sidewall-generated dark current was found to dominate the noise equiva ...

    SBIR Phase II 2010 Department of CommerceNational Institute of Standards and Technology
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