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The Award database is continually updated throughout the year. As a result, data for FY19 is not expected to be complete until April, 2020.

  1. High Efficiency, Large-Area, 1550 nm InGaAs Photodiodes

    SBC: VOXTEL, INC.            Topic: N/A

    A back-illuminated planar InGaAs photodiode tested to have 95% quantum effiiency (QE) at 1550 nm, area greater than 1 mm2, low capacitance (<23 pF), and high bandwidth (>125 MHz) will be improved. Although the existing Phase I device exhibited bulk material dark current generation better than commercially available devices, the sidewall-generated dark current was found to dominate the noise ...

    SBIR Phase II 2010 Department of CommerceNational Institute of Standards and Technology
  2. Efficient High-Power Tunable Terahertz Sources using Optical Techniques

    SBC: Microtech Instruments, Inc.            Topic: AF08T009

    The main objective of the proposed Phase II project is to leverage the technology of THz generation in resonantly-pumped quasi-phase-matched (QPM) GaAs structures, jointly developed by Stanford University and Microtech Instruments, Inc., and create a compact and power-efficient commercial THz source with a mW-level average power. This source will be continuously or step-tunable in the 0.5-3 THz ra ...

    STTR Phase II 2010 Department of DefenseAir Force

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