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Award Data

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The Award database is continually updated throughout the year. As a result, data for FY20 is not expected to be complete until September, 2021.

  1. High Efficiency, Large-Area, 1550 nm InGaAs Photodiodes

    SBC: VOXTEL, INC.            Topic: N/A

    A back-illuminated planar InGaAs photodiode tested to have 95% quantum effiiency (QE) at 1550 nm, area greater than 1 mm2, low capacitance (<23 pF), and high bandwidth (>125 MHz) will be improved. Although the existing Phase I device exhibited bulk material dark current generation better than commercially available devices, the sidewall-generated dark current was found to dominate the noise ...

    SBIR Phase II 2010 Department of CommerceNational Institute of Standards and Technology
  2. N/A

    SBC: VOXTEL, INC.            Topic: N/A

    High performance NIR APDs suitable for photon counting are presently unavailable. New high sensitivity, high speed photodetectors operating from 1.0 to 1.6 microns are needed for both military and commercial applications. New research has demonstrated APD structures, which use a Si multiplication region and an InGaAs absorption region. This device shows high sensitivity, very high speed, low ...

    SBIR Phase II 2001 Department of Commerce
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