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Award Data
The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.
Download all SBIR.gov award data either with award abstracts (290MB)
or without award abstracts (65MB).
A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.
The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.
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Stray Light Test Station for Ballistic Missile Defense Sensors – IR Measurement
SBC: Breault Research Organization, Inc. Topic: MDA05006Controlling stray light in ballistic missile defense (BMD) sensors is essential to target detection, discrimination and acquisition. The most effective way to control stray light is to move or block the offending stray light source. In the hostile environment of missile defense this is not an option. The enemy dictates the stray light environment. Defense sensors must contend with the sun, moo ...
SBIR Phase II 2007 Department of DefenseMissile Defense Agency -
Microcryocooler for Wafer Scale Integration with Sensors
SBC: General Pneumatics Corporation Topic: N/ACRYOCOOLER MICROELECTROMECHANICAL MICRODYNAMICS INTEGRATED GENERAL PNEUMATICS CORP'S PRELIMINARY DESIGN FOR EMPLOYING MICRODYNAMICS TO PRODUCE MICROELECTROMECHANICAL CLOSED-CYCLE CRYOCOOLERS USING SILICON PROCESSING TECHNIQUES WILL BE USED FOR MAKING INTEGRATED CIRCUITS IN PHASE 1. MICROMINIATURE COOLERS WILL BE INTEGRATED AT THE WAFER SCALE WITH A WIDE VARIETY OF SENSORS AND OTHER COLD ELECTRONIC ...
SBIR Phase II 1996 Department of DefenseMissile Defense Agency -
Sigec Heteroepitaxial Layer Growth By Low Temperature, High Purity
SBC: LAWRENCE SEMICONDUCTOR RESEARCH LABORATORY, INC. Topic: N/ATHE GOAL OF THE PROPOSED RESEARCH IS TO DEVELOP A PROCESS GROW DEVICE QUALITY Si-Ge-C STRAIN LAYERS HETEROEPITAXIALLY ONTO SINGLE CRYSTAL SILICON SUBSTRATES. Si-Ge-C ALLOYS WILL MAKE POSSIBLE A NEW CLASS OF HETEROJUNCTION DEVICES IN WHICH THE BANDGAP CAN BE TAILORED TO BE WIDER OR NARROWER THAN SILICON, AND IN WHICH PARTIAL OR COMPLETE STRAIN COMPENSATION IS POSSIBLE. INITIAL PROCESS DEVELOPMENT W ...
SBIR Phase II 1996 Department of DefenseMissile Defense Agency -
Nanoceramics Based Multilayered Capacitors
SBC: Nanomaterials Research LLC Topic: N/AGlobal production and use of ceramic capacitors exceeds several hundred million units per day. With the projected growth in demand for more demanding electronic products, electronic vehicles and related technologies, the need for more reliable, higher energy density, higher power density, higher breakdown strength, efficient ceramic capacitors can not be overstated. Multilayered ceramic capacitors ...
SBIR Phase II 1996 Department of DefenseMissile Defense Agency