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Award Data

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The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. CERAMIC INSULATORS FOR PULSED ELECTROTHERMAL DISCHARGES GTD-43

    SBC: Gt-devices Inc            Topic: N/A

    HIGH POWER ELECTROTHERMAL DISCHARGE TECHNOLOGY PROVIDES AN ATTRACTIVE APPROACH FOR ACCELERATING SDI KEW PROJECTILES AND FOR SDI SPACE PROPULSION. STORED ENERGY IS USED TO HEAT SUITABLE PLASMA MATERIALS IN A LARGE L/D TUBE ON MICROSECOND TIME SCALES, CREATING A HIGH PRESSURE,LOW MOLECULAR WEIGHT JET. REPETITIVE OPERATION OF THESE JETS REQUIRESDEVELOPMENT OF A HIGH STRESS INSULATOR, RESISTANT TO THE ...

    SBIR Phase II 1987 Department of DefenseMissile Defense Agency
  2. DIRECTED ENERGY SYSTEM POINTING THROUGH GEOSYNCRONOUS POSITIONING SATELLITE INTERFEROMETRY

    SBC: Adroit Systems, Inc.            Topic: N/A

    CURRENT STUDIES CONCENTRATE ON GLOBAL POSITIONING SYSTEM (GPS) AS A SPACECRAFT ATTITUDE DETERMINATION TOOL. TWO GPS ANTENNAS RECEIVING THE SAME SIGNAL CAN COMPARE THEIR RELATIVE PHASES TO DETERMINE THE ANGLE BETWEEN THE TWO ANTENNAS AND THE GPS SATELLITE. BY COMPUTING THE ANGLE TO THREE OR MORE SATELLITES, THE COMPLETE INERTIAL ORIENTATION MAY BE DETERMINED. APPLYING ADVANCES IN GPS INTERFEROMETRY ...

    SBIR Phase II 1988 Department of DefenseMissile Defense Agency
  3. ELECTRONIC GAAS-ON-SILICON MATERIAL FOR ADVANCED HIGH-SPEED OPTOELECTRONIC DEVICES

    SBC: ASTROPOWER, INC.            Topic: N/A

    THE SUCCESSFUL GROWTH OF GAAS ON SILICON SUBSTRATES USING DOUBLE SELECTIVE LIQUID EPITAXIAL (DSLE) PROCESS HAS RECENTLY BEEN ACCOMPLISHED. THESE RESULTS SET THE STAGE FOR THE DEVELOPMENT OF AN EXTREMELY USEFUL MATERIAL--LARGE PLANAR WAFERS OF SMOOTH GAAS ON SILICON. DOUBLE SELECTIVE LIQUID PHASE EPITAXY COULD SIGNIFICANTLY REDUCE THE PROBLEMS CAUSED BY LATTICE MISMATCH AND DIFFERENTIAL THERMAL EXP ...

    SBIR Phase II 1988 Department of DefenseMissile Defense Agency
  4. HIGHLY DIRECTIONAL AND SENSITIVE GAMMA/NEUTRON DETECTOR

    SBC: FIBERTEK, INC.            Topic: N/A

    A HIGHLY SENSITIVE AND DIRECTIONAL NUCLEAR RADIATION DETECTION SYSTEM,RESPONDING TO LOW-LEVEL GAMMA-RADIATION AND LOW NEUTRON FLUX, WOULD BEIMPORTANT IN THE AREA OF DECOY DISCRIMINATION AND/OR AS A WARNING DEVICE AGAINST THREAT PARTICLE BEAM WEAPONS. FOR EXAMPLE, ACTIVE ILLUMINATION OF A POTENTIAL SPACE THREAT WITH A PARTICLE BEAM REQUIRESA HIGHLY DIRECTIONAL SENSOR FOR DISCRIMINATION PURPOSES. ON ...

    SBIR Phase II 1988 Department of DefenseMissile Defense Agency
  5. LIQUID PROPELLANT PULSED ELECTROTHERMAL THRUSTER

    SBC: Gt-devices Inc            Topic: N/A

    AN ON-ORBIT PROPULSION CAPACITY IS REQUIRED FOR STRATEGIC DEFENSE THATFEATURES HIGH EFFICIENCY AT A SPECIFIC IMPULSE OF 1000-3000 SECONDS. THIS PROPULSION IS REQUIRED FOR ORBIT TRANSFER, ORBITAL MANEUVERING AND STATION-KEEPING MISSIONS. THE PULSED ELECTROTHERMAL (PET) THRUSTER SEEMS PARTICULARLY ATTRACTIVE FOR THESE APPLICATIONS, AND HASPREVIOUSLY APPROACHED THE REQUIRED PERFORMANCE LEVELS WITH WA ...

    SBIR Phase II 1989 Department of DefenseMissile Defense Agency
  6. SOLID LUBRICANTS FOR SPACE STRUCTURES

    SBC: MATERIALS MODIFICATIONS INC            Topic: N/A

    NEW AND INNOVATIVE NONEQUILIBRIUM MATERIALS FOR VARIOUS SPACE STRUCTURES ARE NEEDED FOR STRATEGIC DEFENSE. ONE AREA WHERE LITTLE ATTENTION HAS BEEN FOCUSSED IS THE DEVELOPMENT OF SOLID LUBRICANTS. THE POTENTIAL USE IS BEING EXPLORED OF HIGH LEAD BEARING COPPER ALLOYS(UP TO 50% LEAD) AS BEARING MATERIALS; BATTERY GRIDS THAT WOULD REPLACE THE CURRENTLY USED LEAD ALLOYS; AND POSSIBLE COATINGS FOR HIG ...

    SBIR Phase II 1989 Department of DefenseMissile Defense Agency
  7. ALUMINUM-GALLIUM-ARSENIDE TOP SOLAR CELL FOR MECHANICAL ATTACHMENT TO A SILICON CONCENTRATOR WITH IMPROVED AMO EFFICIENCY

    SBC: ASTROPOWER, INC.            Topic: N/A

    INCREASES IN SOLAR CELL EFFICIENCY CAN BE ACHIEVED WITH TANDEM MULTI-JUNCTION STRUCTURES TO IMPROVE THE PERFORMANCE AND SCALE OF SPACE PHOTOVOLTAIC CONCENTRATORS. THE "TOP SOLAR CELL" TANDEM APPROACH COULD INCREASE ENERGY CONVERSION EFFICIENCY BY AS MUCH AS 100%. A SELF-SUPPORTING ALUMINUM-GALLIUM-ARSENIDE (ALGAAS) TOP SOLAR CELL IS BEING DEVELOPED FOR MECHANICAL ATTACHMENT TO A SILICON CONCENTRAT ...

    SBIR Phase II 1990 Department of DefenseMissile Defense Agency
  8. HIGH TEMPERATURE SURVIVABLE CONTACTS FOR GALLIUM ARSENIDE SPACE SOLAR CELLS

    SBC: ASTROPOWER, INC.            Topic: N/A

    EXISTING METALLIC-TYPE CONTACTS ON GALLIUM ARSENIDE (GAAS) HAVE NOT BEEN STABLE AT HIGH TEMPERATURES BECAUSE OF INTERDIFFUSION AND/OR ALLOYING OF THE GAAS TOP LAYER. HIGH TEMPERATURE CONTACTS TO GAAS SPACE PHOTOLTAIC CELLS ARE BEING DEVELOPED BASED ON THE FORMATION OF A HIGHLY-STABLE INTERMEDIATE DEGENERATE SEMICONDUCTOR LAYER BETWEEN THE GAAS AND A HIGH TEMPERATURE METAL ALLOY. THE INTERMEDIATE S ...

    SBIR Phase II 1990 Department of DefenseMissile Defense Agency
  9. THIN CRYSTALLINE INDIUM-PHOSPHIDE ON INSULATING SUBSTRATES

    SBC: ASTROPOWER, INC.            Topic: N/A

    UNIFORM LARGE AREA, DEVICE QUALITY INDIUM PHOSPHIDE (INP) EPITAXIAL LAYERS ON INSULATING SUBSTRATES COULD LEAD TO THE DEVELOPMENT OF A NEW GENERATION OF PRODUCIBLE, RADIATION-HARDENED MICROELECTRONIC AND OPTOELECTRONIV INTEGRATED CIRCUITS. INP ALLOYS OFFER THE ADVANTAGES OF: PROVEN RESISTANCE TO RADIATION DAMAGE; LOWER SURFACE RECOMBINATION THAN GAAS; HIGH PEAK ELECTRON VELOCITY; AND BANDGAPS THAT ...

    SBIR Phase II 1990 Department of DefenseMissile Defense Agency
  10. HIGH TEMPERATURE SURVIVABLE INDIUM PHOSPHIDE SOLAR CELLS

    SBC: ASTROPOWER, INC.            Topic: N/A

    HIGH TEMPERATURE (>600 DEGREES CELSIUS) INDIUM PHOSPHIDE (INP) SPACE SOLAR CELLS ARE BEING DEVELOPED TO ELIMINATE THEPROBLEMS, SURFACE DECOMPOSITION AND CONTACT FAILURE, ENCOUNTERED WHEN INP SOLAR CELLS ARE EXPOSED TO HIGH TEMPERATURES. KEY TO THIS PROGRAM ARE THE USE OF AN ENCAPSULANT LAYER TO ARREST SURFACE DECOMPOSITION AND A HIGHLY-STABLE INTERMEDIATE DEGENERATE SEMICONDUCTOR CONTACT SYSTEM DE ...

    SBIR Phase II 1990 Department of DefenseMissile Defense Agency
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