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We propose the development of an Automatic Testing Data Generation Tool for Large Scale Commercial Applications. The tool will use a novel hybrid technique of symbolic execution and dynamic flow analysis. The proposed approach will be able to generate different forms of input data for large commercial applications. The technique can be applied to generating input data for distributed and imbedded ...

Cryogenic radiometers are the primary standards for the measurement of power in the infrared, the visible, and the ultraviolet, a large part of the ueful spectrum. The integrity of the DoD procurement process and of DoD technology development depend critically on these standards. One aspect of this dependence is measuring the characteristics of those devices that work well in battle. Those measure ...

RECENT THEORETICAL WORKS HAVE PREDICTED A CARBON NITROGEN COMPOUND (C3N4 IN A Si3N4 CONFIGURATION) WHICH WOULD POSSES A STRENGTH ON THE ORDER OF AND POSIIBLY EVEN GREATER THAN THAT OF DIAMOND. IN ADDITION TO HARDNESS ITS THERMAL, ELECTRICAL, AND OPTICAL PROPERTIES PROMISE TO BE VERY INTERESTING. THE PRODUCTION OF SUCH A MATERIAL WOULD BE VERY SIGNIFICANT AND PRESENT A TREMENDOUS OPPORTUNITY FOR A ...

Thermal conductivity of diamond can be greatly improved by reducing the (12)C and (13)C initiated phonon collisions. Removal of (13)C isotope from CH(4) in the Arc-jet CVD produced diamond would drastically improve the thermal management in devices ranging from the nose-cones of missiles to multichip modules. Isotope enrichment of (12)C, or the removal of (13)C, uses a chemical diffusion process ( ...

OHMIC CONTACTS ARE KEY TO THE IMPLEMENTATION OF SILICON CARBIDE (SIC) HIGH POWER, HIGH TEMPERATURE DEVICES. TO DATE, CONTACTS TO SiC MADE USING CONVENTIONAL TECHNIQUES HAVE DEMONSTRATED NEITHER LOW CONTACT RESISTANCES NOR LONG TERM STABILITY. IN PHASE I WE WILL DEVELOP LOW RESISTANCE SILICIDE BASED OHMIC CONTACTS SPECIFICALLY AIMED AT SiC HIGH TEMPERATURE, HIGH POWER DEVICES. CONTACTS WILL BE FABR ...

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ELECTROMAGNETIC SHOCK LINE IGBT SUBNANOSECOND PULSES SCIENCE RESEARCH LABORATORY WILL DEVELOP A NEW INPUT CHARGING TECHNIQUE BY COMBINING INSULATED GATE BIPOLAR TRANSISTORS (IGBTs) AND BRANCHED MAGNETICS TECHNOLOGY WHICH WILL ALLOW OPERATION AT PULSE REPETITION RATES IN EXCESS OF 100,000 pps. IN PHASE 1, THE DESIGN VERIFICATION TESTING WILL BE DONE, ESTABLISHING 100,000 pps OPERATION OF THE COMMUT ...

Future flight vehicles will require incredased speed, precision, and survivability under a wider variety of flight conditions than current technology supports. The traditional role of flight control systems (FCS) in providing stability and command augmentations must be expanded to achieve enhanced maneuverability, combat effectiveness, and self repair. Recent advances in the development of fuzzy l ...

Gallium nitride (GaN) is a wide band gap semiconducter which holds promise for building a wide range of devices such as UV lasers, blue LEDs, UV detectors, non-volatile memories, high temperature electronics and high frequency-high speed devices and integrated circuits. At the present time, GaN films which are produced by the most widely used folm growth technologies, have residual hydrogen which ...

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