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The Award database is continually updated throughout the year. As a result, data for FY21 is not expected to be complete until September, 2022.
Enhanced Reliability of Radiation-hardened III-V Semiconductor-based Field Effect Transistors Using C-doped Low-temperature BufferSBC: Quantum Epitaxial Designs, Topic: N/A
Low-temperature MBE grown GaAs (LT-GaAs) contains a high concentration of excess As which gives rise to ultra-fast carrier-trapping time and excellent radiation hardness. In as-grown layers most of this excess As is in the form of As(Ga) antisite defects, of which only ~1% are ionized. Thermal annealing upon overgrowth with a device structure or during device processing results in a decrease of ...SBIR Phase I 1998 Department of DefenseNational Geospatial-Intelligence Agency