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Low-temperature MBE grown GaAs (LT-GaAs) contains a high concentration of excess As which gives rise to ultra-fast carrier-trapping time and excellent radiation hardness. In as-grown layers most of this excess As is in the form of As(Ga) antisite defects, of which only ~1% are ionized. Thermal annealing upon overgrowth with a device structure or during device processing results in a decrease of ...

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Not Available The intent of this research is to develop an advanced nozzle for mixing and reacting iodine (I (sub 2) or I) and singlet-delta oxygen [O (sub 2) ((sup 1) increment)] flows in COIL devices. The ultimate goal is to develop a more efficient COIL. Specific avenues for the proposed research are: (1) Current COIL nozzles typically inject a mixture of diluent gas and molecular iodine into ...

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Not Available The most cost-effective, scalable format for the development of high power ladar and directed energy systems is to combine medium power laser modules into a coherently phased array. To this end, CTI proposes to develop a coherent synthetic aperture, synthetic wavelength ladar system based upon modular, tunable fiber lasers/amps. It is suggested that high spatial and spectral coheren ...

Not Available This phase I proposal addresses fabrication and characterization of nanoscale Si MOSFETs on Si-on-insulator (SOI) wafers. A novel approach based on multiple channel gate arrays is proposed to improve radiation-tolerance against SEU events, and achieve low-threshold voltage operation. At nanoscale (

Not Available The innovation offered by this Phase I SBIR proposal is a 2.488 Gbps spaceborne fiber optic network operating at ATM OC-48 data rates, with the potential of yielding interconnect speeds as high as 4.98 Gbps. This innovation represents a significant improvement in the data handling capabilities of currently available spaceborne data networks. The fiber optic network will implement th ...

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