You are here
The Award database is continually updated throughout the year. As a result, data for FY21 is not expected to be complete until September, 2022.
Enhanced Reliability of Radiation-hardened III-V Semiconductor-based Field Effect Transistors Using C-doped Low-temperature BufferSBC: Quantum Epitaxial Designs, Topic: N/A
Low-temperature MBE grown GaAs (LT-GaAs) contains a high concentration of excess As which gives rise to ultra-fast carrier-trapping time and excellent radiation hardness. In as-grown layers most of this excess As is in the form of As(Ga) antisite defects, of which only ~1% are ionized. Thermal annealing upon overgrowth with a device structure or during device processing results in a decrease of ...SBIR Phase I 1998 Department of DefenseNational Geospatial-Intelligence Agency
SBC: SiCOM, Inc Topic: N/A
In the proposed SBIR Phase I program, SiCOM will: 1) demonstrate and parametrically field-characterize BitSURE(tm) an innovative and unprecedented interference and multipath tolerant spread-spectrum wireless high speed digital communications technology; and 2) develop a point modem design for a revolutionary reduction in size, power and cost for Phase II using SiCOM's(tm) unique Application Progr ...SBIR Phase I 1998 Department of DefenseNational Geospatial-Intelligence Agency
SBC: VEXCEL CORP. Topic: N/A
Vexcel proposes a system for extracting terrain elevation from large stereo SAR databases using a priori elevation map data. This system will accelerate, automate, and improve the accuracy and robustness of radargrammetricnprocessing for data acquired from wide spectrum of existing and planned SAR platforms.SBIR Phase I 1998 Department of DefenseNational Geospatial-Intelligence Agency