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Award Data

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The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. SBIR Phase I:Electromagnetic Pulse Sensors Based on Magnetic Nanowire Arrays

    SBC: SPECTRUM MAGNETICS LLC            Topic: NM

    This Small Business Innovation Research (SBIR) Phase I project aims to develop novel field detectors and memory devices capable of detecting magnetic field of an electromagnetic pulse (EMP). The sensor is made of magnetic nanowire arrays consisting of magnetic nanowires embedded in an insulating matrix, and is able to memorize the incoming rf magnetic field pulse as short as 100ps and survive in a ...

    SBIR Phase I 2010 National Science Foundation
  2. SBIR Phase I: Capital Structuring Decision Support

    SBC: CapSmart            Topic: IC

    This Small Business Innovation Research (SBIR) Phase I project will research and develop a software system to model the complex and varied rights structures used in private company finance. This system will show the behavior (such as the economic payouts to each stakeholder) of capital structures under various future funding and exit event scenarios. Sophisticated investors employ various securit ...

    SBIR Phase I 2010 National Science Foundation
  3. N/A

    SBC: ANALYTICAL BIOLOGICAL SERVICES, INC.            Topic: N/A

    This Small Business Innovation Research Phase I (SBIR) project will develop a novel sensing coating that will be deposited on filters for the detection of water-borne contaminants. The initial target will be the oocysts of Cryptosporidium parvum, a water- borne pthogen. C. Parvum was responsible for the outbreak of cryptosporidiosis affecting 400,000 in Milwaukee WI in 1993 and other smaller outbr ...

    SBIR Phase I 2001 National Science Foundation
  4. SBIR Phase II: Development of a Novel Sensing Material for Waterborne Pathogens

    SBC: ANALYTICAL BIOLOGICAL SERVICES, INC.            Topic: N/A

    This Small Business Innovation Research (SBIR) Phase II Project proposes to develop a method to detect Cryptosporidium parvum oocyst in water using a novel sensing coating deposited on filters. C. parvum has been responsible for a number of outbreaks of cryptosporidiosis, including the outbreak in Milwaukee in 1993 that affected 400,000 people. Crytosporidiosis is characterized by abdominal pain ...

    SBIR Phase II 2003 National Science Foundation
  5. SBIR Phase II: Development of a Novel Sensing Material for Waterborne Pathogens

    SBC: ANALYTICAL BIOLOGICAL SERVICES, INC.            Topic: N/A

    This Small Business Innovation Research (SBIR) Phase II Project proposes to develop a method to detect Cryptosporidium parvum oocyst in water using a novel sensing coating deposited on filters. C. parvum has been responsible for a number of outbreaks of cryptosporidiosis, including the outbreak in Milwaukee in 1993 that affected 400,000 people. Crytosporidiosis is characterized by abdominal pain ...

    SBIR Phase I 2003 National Science Foundation
  6. OPTICAL COMMUNICATIONS.

    SBC: ASTROPOWER, INC.            Topic: N/A

    THE GROWTH OF GAAS ON SILICON HAS LONG BEEN RECOGNIZED AS A DESIRABLE APPROACH FOR ADVANCE OPTOELECTRONIC DEVICES INCLUDING OPTICAL INTEGRATED CIRCUITS, OPTICAL COMMUNICATIONBETWEEN CIRCUITS AND AS A SOURCE OF LOW-COST GAAS LAYERS FORSOLAR CELL AND DISPLAY APPLICATIONS. PROGRESS ON THE DEVELOPMENT OF THIS TECHNOLOGY HAS BEEN AFFECTED BY STRAINS AND DISLOCATIONS INTRODUCED INTO THE GAAS LAYER BY TH ...

    SBIR Phase I 1985 National Science Foundation
  7. INTEGRATED GAAS EMITTER FOR OPTICAL INTERCONNECTIONS

    SBC: ASTROPOWER, INC.            Topic: N/A

    THE EFFECT OF SCALING DOWN DEVICE DIMENSIONS OF VLSI STRUCTURES AND THE COMBINATION OF INCREASED CIRCUIT COMPLEXITY DURING THE SCALING PROCESS IS PLACING SEVERE LIMITATIONS ON THE MINIMUM PROPAGATION DELAY OF METALLIC INTERCONNECTS. OPTICAL INTERCONNECTS REMOVE THOSE SPEED LIMITATIONS AND OFFER A DEGREE OF FLEXIBILITY THAT ELECTRICAL INTERCONNECTS COULD NEVER OBTAIN. THE KEY OPPORTUNITY IS TO INTE ...

    SBIR Phase I 1987 National Science Foundation
  8. GALLIUM ARSENIDE ON SILICON FOR MICROELECTRONIC AND OPTOELECTRONIC INTEGRATED CIRCUITS

    SBC: ASTROPOWER, INC.            Topic: N/A

    THE GROWTH OF DEVICE QUALITY, LARGE AREA GAAS EPITAXIAL LAYERS ON SILICON SUBSTRATES IS RECOGNIZED AS AN IMPORTANT TECHNOLOGICAL DEVELOPMENT. THE QUALITY OF HETEROEPITAXIAL LAYERS OF GAAS ON SILICON ARE LIMITED BY GAAS-SI LATTICE MISMATCH AND THERMAL COEFFICIENT MISMATCH. THE DEFECT DENSITY OF THE GAAS EPILAYER IS DIRECTLY RELATED TO THE INTERFACE AREA. OUR LABORATORIES HAVE DEMONSTRATED A VIABLE ...

    SBIR Phase II 1989 National Science Foundation
  9. LARGE-SCALE LIGUID PHASE EPITAXY OF MULTIPLE LAYER III-V SEMICONDUCTOR COMPOUNDS

    SBC: ASTROPOWER, INC.            Topic: N/A

    ASTROPOWER PROPOSES TO DEVELOP A LARGE-SCALE, HIGH-THROUGHPUT LIQUID PHASE EPITAXIAL (LPE) REACTOR FOR THEFABRICATION OF MULTI-LAYER III-V SEMICONDUCTOR DEVICES. A DESIGN GOAL OF 1000 CM(2) PER HOUR HAS BEEN ESTABLISHED WHILE MAINTAINING THE KEY FEATURES OF LPE: 1) HIGHEST MATERIAL QUALITY OF ALL EPITAXIAL GROWTH PROCESSES, 2) SIMPLICITY AND SAFETY (AS COMPARED TO MOCVD AND MBE), AND 3) LOW COST ( ...

    SBIR Phase I 1991 National Science Foundation
  10. CONFORMAL HETEROEPITAXY OF GAAS AND INP ON SILICON AND SAPPHIRE SUBSTRATES

    SBC: ASTROPOWER, INC.            Topic: N/A

    CONFORMAL VAPOR PHASE EPITAXY (CVPE) IS A NEW TECHNIQUE FOR TWO-DIMENSIONAL CONSTRAINED GROWTH OF THIN SEMICONDUCTOR FILMS USING A HALIDE VAPOR TRANSPORT PROCESS. THIS TECHNIQUE WILL BE APPLIED TO THE GROWTH OF GAAS AND INP FILMS ON SILICON AND SAPPHIRE SUBSTRATES. EPITAXIAL-LATERALOVERGROWTH WITH HIGH ASPECT RATIOS IS ACHIEVED BY CONFINING GROWTH TO A THIN VOID SPACE BOUNDED BY AN OXIDE-MASK COAT ...

    SBIR Phase I 1991 National Science Foundation
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