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Award Data

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The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. Advanced Manufacturing and Performance Enhancements for Reduced-cost Silicon Carbide MOSFETs (AMPERES)

    SBC: MONOLITH SEMICONDUCTOR INC            Topic: 1

    The team of Monolith Semiconductor, X-FAB Texas, Rensselaer, United Technologies and Univ. of Arkansas will provide breakthrough advances in switch performance and manufacturing cost reduction to deliver cost-effective 100Amp, 1200V SiC power MOSFETs to enable widespread adoption. Based on the combined expertise in both Silicon and SiC power device design and processing, Monolith Semiconductor is ...

    SBIR Phase I 2013 Department of EnergyARPA-E
  2. Creating Spatial Disorientation in Flight Simulation

    SBC: CONTINUUM DYNAMICS INC            Topic: 122FA1

    Training in the symptoms of Spatial Disorientation (SD) has shown to be valuable in aiding pilots to recognize its onset and provide a means for mitigating its effects, but such demonstrations have traditionally been associated with specialized equipment and devices. Since the vast majority of pilots for the commercial aviation jet fleet are trained (or recertified) on 6-degree-of-freedom (DOF) h ...

    SBIR Phase I 2013 Department of Transportation
  3. Dynamic Frequency Passive Millimeter-Wave Radiometer Based on Optical Up-Conversion

    SBC: PHASE SENSITIVE INNOVATIONS INC            Topic: 941D

    In the proposed effort, we will leverage this extensive experience and capabilities to realize a frequency agile mmW radiometer that can cover the range of DC-110 GHz and can be scaled to DC-200 GHz under Phase II. Ours is a photonic system that multiplies and up-coverts a low-frequency reference signal onto an optical carrier (laser) using EO modulation, then uses the modulation sidebands to inj ...

    SBIR Phase I 2013 Department of CommerceNational Oceanic and Atmospheric Administration
  4. Scalable Single- and Multi-"Boule"Bulk GaN Substrate HVPE Production Tool

    SBC: STRUCTURED MATERIALS INDUSTRIES, INC.            Topic: DTRA122001

    GaN-based devices are currently grown on foreign substrates such as SiC and Al2O3, due to the lack of high quality GaN substrates. It is well known that the use of foreign substrates limits device performance due to a high dislocation density in the GaN film. Structured Materials Industries, Inc. (SMI) has developed a hybrid HVPE approach to grow high quality GaN device films. In this SBIR proj ...

    SBIR Phase I 2013 Department of DefenseDefense Threat Reduction Agency
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