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The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. Dynamic Frequency Passive Millimeter-Wave Radiometer Based on Optical Up-Conversion

    SBC: PHASE SENSITIVE INNOVATIONS INC            Topic: 941D

    In the proposed effort, we will leverage this extensive experience and capabilities to realize a frequency agile mmW radiometer that can cover the range of DC-110 GHz and can be scaled to DC-200 GHz under Phase II. Ours is a photonic system that multiplies and up-coverts a low-frequency reference signal onto an optical carrier (laser) using EO modulation, then uses the modulation sidebands to inj ...

    SBIR Phase I 2013 Department of CommerceNational Oceanic and Atmospheric Administration
  2. Creating Spatial Disorientation in Flight Simulation

    SBC: CONTINUUM DYNAMICS INC            Topic: 122FA1

    Training in the symptoms of Spatial Disorientation (SD) has shown to be valuable in aiding pilots to recognize its onset and provide a means for mitigating its effects, but such demonstrations have traditionally been associated with specialized equipment and devices. Since the vast majority of pilots for the commercial aviation jet fleet are trained (or recertified) on 6-degree-of-freedom (DOF) h ...

    SBIR Phase I 2013 Department of Transportation
  3. High Power Frequency Doubled Laser Diode Devices

    SBC: Altos, Inc.            Topic: N/A

    This Small Business Innovation Research Phase I program will determine the practicality of increasing the second harmonic (SH) output of frequency doubling devices by at least 5 times current gutput powers. Altos has demonstrated in preliminary experiments have a 2 times to 3 times increase in SH output by creating thermal gradients across the waveguide structures used to frequency double the lase ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  4. High Voltage GaAs Solar Cell for Linear Concentrator Arrays

    SBC: ASTROPOWER, INC.            Topic: N/A

    AstroPower proposes to develop a new high voltage solar cell for photovoltaic linear concentrator arrays based on our thin GaAs solar cell and epitaxial lateral overgrowth technologies and applying lateral segment interconnection techniques. This solar cell design has several advantages which make it ideal for space concentrator systems. These are high system voltage (10 to 500 volts per cell), re ...

    SBIR Phase I 1996 Department of DefenseMissile Defense Agency
  5. Low-Defect GaN Surrogate Substrates by Epitaxial Lateral Overgrowth

    SBC: ASTROPOWER, INC.            Topic: N/A

    We propose exploratory development of new epitaxial growth technologies for low-defect GiN epitaxial structures and surrogate substrates. A significant feature of our approach is epitaxial latval overgrowth for "defect filtering." We present arguments that such epitaxial lateral overgrowth will lead to GaN material of unprecedented quality with respect to defects, stress, and purity. In the Phase ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  6. High-Speed Adaptive Optimal Associative Memory

    SBC: Cyber Dynamics, Inc.            Topic: N/A

    Cyber Dynamics, Inc. (CDI), proposes to develop a software implementation of the theoretically fastest adaptive process for Optimal Associative Memory (OAM). This algorithm provides orders of magnitude improvement over all conventional neural network paradigms in the areas of response recall accuracy, information storage capacity and density, immunity to noise, generalization characteristics, and ...

    SBIR Phase I 1996 Department of DefenseMissile Defense Agency
  7. GaN LED UV Pumped Multi-Color & White Light Phosphors Using Innovative Immersion Techniques for Display Applications

    SBC: EMCORE CORP.            Topic: N/A

    The use of UV LEDs for creating visible light by exciting commercially available phosphors will be explored. LEDs based on the (InAlGa)N materials system, now currently used to produce high brightness blue and green LEDs, will be developed to emit efficiently at UV wavelengths corresponding to the excitation bands of various phosphors. By using UV emission from LEDs to excite standard phosphors to ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  8. Innovative Development of a Large Area SiC Growth System & Growth Process

    SBC: EMCORE CORP.            Topic: N/A

    Silicon carbide (SiC) is an attractive material for use in high power and high temperature devices. Currently, there are significant challenges for the growth of large area epitaxial films of SiC. We are proposing to develop novel growth systems and growth processes for the large area growth of SiC. In our approach, we will increase the uniformity of Si/C ratios and temperature at the growth inter ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  9. The Innovative Development of Avalanche Photodetectors for UV Application

    SBC: EMCORE CORP.            Topic: N/A

    For many miltary applications, normal photoconductors and junction photodiodes are not sufficiently sensitive for detection of low incident light levels, therefore photodetector devices with optical gain are required. Large gains can be obtained in avalanche photodiodes (APD) with both low noise and large bandwidth. It is proposed to develop innovative AlGaN/GaN based APDs. In order to achieve the ...

    SBIR Phase I 1997 Department of DefenseMissile Defense Agency
  10. Capacitance-Free Integrated Circuit Interconnects

    SBC: Integrated Photonics, Inc.            Topic: N/A

    A compact high speed logic gate is proposed that will switch with a speed under 10 psecs with a power-time product of less than 7 fJ. The electrical power should be less than 1 mA at 1.5 Volts. Unlike all-electronic logic, this opto-electronic logic gate's speed and power will remain fast and low, even when incorporated in large integrated optical circuits with thousands of external connections. ...

    SBIR Phase I 1996 Department of DefenseMissile Defense Agency
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