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Award Data

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The Award database is continually updated throughout the year. As a result, data for FY20 is not expected to be complete until September, 2021.

  1. High-Power Vertical-Junction Field-Effect Transistors Fabricated on Low-Dislocation-Density GaN by Epitaxial Lift-Off

    SBC: Microlink Devices, Inc.            Topic: 1

    In this program, we will develop a breakthrough technology that will enable wafer-scale epitaxial lift-off (ELO) of GaN power device heterostructures from low-dislocation-density bulk GaN substrates. This technology will be used to provide a low-cost vertical junction field effect transistors (VJFETs) with high breakdown voltage (greater than 1,200 V) and high current capability (greater than 100 ...

    SBIR Phase I 2013 Department of EnergyARPA-E
  2. Dynamic Frequency Passive Millimeter-Wave Radiometer Based on Optical Up-Conversion

    SBC: Phase Sensitive Innovations, Inc.            Topic: 941D

    In the proposed effort, we will leverage this extensive experience and capabilities to realize a frequency agile mmW radiometer that can cover the range of DC-110 GHz and can be scaled to DC-200 GHz under Phase II. Ours is a photonic system that multiplies and up-coverts a low-frequency reference signal onto an optical carrier (laser) using EO modulation, then uses the modulation sidebands to inj ...

    SBIR Phase I 2013 Department of CommerceNational Oceanic and Atmospheric Administration
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