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The Award database is continually updated throughout the year. As a result, data for FY23 is not expected to be complete until September, 2024.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. APPLICATION OF PULSE CORONA INDUCES PLASMAS FOR CONTROL OF NOx FROM JET ENGINE TEST CELLS

    SBC: ADA TECHNOLOGIES, INC.            Topic: N/A

    Jet engine test cells are faced with meeting regulations related to NOx emissions and opacity. Based upon reported research results, it appears that the Pulse Induced Plasma Chemical Process (PPCP) could be effectively applied to jet engine test cells for the control of NOx. The process provides high efficiency NOx removal at relatively low temperature without the need for NH3 injection. PPCP can ...

    SBIR Phase II 1994 Department of DefenseAir Force
  2. RAPID HIGH RATE LEAD-IN-AIR MONITOR FOR USE AT FIRING RANGES

    SBC: ADA TECHNOLOGIES, INC.            Topic: N/A

    The development of a simple, reliable, and easily operated system to detect and measure airborne lead (Pb) to trace levels is the subject of the Phase I effort. Lead is toxic to humans at very low levels and is ingested easily by breathing air in which elemental Pb or compounds of this element are dispersed. In firing ranges there is an opportunity for shooters and range personnel to be exposed to ...

    SBIR Phase II 1994 Department of DefenseNavy
  3. High Mobility Silicon Carbide Substrates

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    THE HIGH TEMPERATURE STRENGTH OF CERAMIC MATERIALS MAKE THEM ATTRACTIVE FOR USE IN HIGH EFFICIENCY COMBUSTION ENGINES. UNFORTUNATELY, THE POOR FRICTION AND WEAR PROPERTIES OF COMMON CERAMICS OFTEN PRECLUDE THEIR USE IN ROTATING AND SLIDING COMPONENTS. SOLID STATE LUBRICANTS ARE A POTENTIAL SOLUTION TO THIS TRIBOLOGICAL PROBLEM BUT THEY ARE USUALLY INCOMPATIBLE WITH OXIDE-BASED CERAMICS. A TITANIUM ...

    SBIR Phase II 1994 Department of DefenseArmy
  4. Cubic Silicon Carbide Substrates

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    Silicon carbide promises near-term insertion in high power, high temperature, applications. The wide band-gap and consequent high breakdown field of silicon carbide theoretically allows efficient high power solid state power amplifiers. Its high thermal conductivity will permit compact devices and high power density. To date, virtually all silicon carbide-based devices have been fabricated using 6 ...

    SBIR Phase II 1994 Department of DefenseAir Force
  5. GAN UV/BLUE SOLID STATE LASER

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    Efficient blue and UV lasers are key to high density optical storage, novel communication systems, industrial and medical lasers, and specialized spectroscopic tools. By virtue of their direct bandgap (ranging from 2.09eV-InN to 3.44eV-GaN to 6.2eV-AlN) and lattice-matched heterostructure system, the III-V nitride-based semiconductors have the greatest potential to enable devices that will meet th ...

    SBIR Phase I 1994 Department of DefenseMissile Defense Agency
  6. BULK GROWTH OF GALLIUM NITRIDE SUBSTRATES

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    We propose a novel growth technique to produce low defect density GaN substrates - misfit dislocations will be greatly reduced and the defects due to thermal expansion mismatches will be eliminated. In Phase I the feasibility of the technology will be demonstrated. In Phase II, the process will be scalled and the substrates will be used to fabricate bright blue LEDs in collaboration with Hewlett-P ...

    SBIR Phase I 1994 Department of DefenseMissile Defense Agency
  7. HIGH POWER MOS TRANSISTOR

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    The ability to control large amounts of power (1-150kW) is necessary in applications ranging from aerospace to consumer electronics to industrial power systems and transportation. In order for silicon and gallium arsenide devices to meets such high power densities, tens of devices must be combined to meet the voltage and current requirements. Power combining networks, extra heatsinking and sophist ...

    SBIR Phase I 1994 Department of DefenseMissile Defense Agency
  8. Metalorganic Enhanced Ion Milling for BaSrTio3

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    The demand for higher performance semiconductor devices is pushing the limits of current materials technology. The development of a high dieletric constant capacitor material with 10 - 100 times the charge storage of SiO2 would allow a flat capacitor cell to be used in 256 Mb DRAMs, and simple stacked capacitors to be adopted for 1 and 4 Gb generations. IBM, TI and Micron have entered into an ARPA ...

    SBIR Phase I 1994 Department of DefenseDefense Advanced Research Projects Agency
  9. Superconductor Magnetic Memory

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    THE DEVELOPMENT OF A DENSE, FAST SUPERCONDUCTING MEMORY TECHNOLOGY WILL FACILITATE THE INTEGRATION OF SUPERCONDUCTING ELECTRONICS INTO SPACE AND ELECTONIC WARFARE SYSTEMS. A SUPERCONDUCTOR BASED MAGNETIC MEMORY TECHNOLOGY IS PROPOSED WHICH CAN BE USED TO FABRICATE MULTIMEGABIT SUPERCONDUCTOR MEMORIES WITHOUT REQUIRING LARGE SCALE INTEGRATION OF JOSPEHSON JUNCTIONS. THIS MEMORY WELL SUITED FOR HIGH ...

    SBIR Phase I 1994 Department of DefenseMissile Defense Agency
  10. Efficient Dopant Activation In P-type III-V Nitrides

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    THE AVAILABILITY OF EFFICIENT BLUE LIGHT EMITTERS WOULD BREAK OPEN COMMERCIAL AND DEFENSE MARKETS IN FULL COLOR DISPLAYS AND HIGH DENSITY OPTICAL STORAGE SYSTEMS. NITRIDE-BASED DEVICES HAVE THE GREATEST POTENTIAL AS HIGH EFFICIENCY EMITTERS BECAUSE OF THEIR DIRECT BANDGAP AND CONVENIENT HETEROSTRUCTURES SYSTEM. HOWEVER, THE LACK OF OF SUITABLE P-TYPE DOPING TECHNOLOGY HAS GREATLY HINDERED DEVELOPM ...

    SBIR Phase I 1994 Department of DefenseMissile Defense Agency
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