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Award Data
The Award database is continually updated throughout the year. As a result, data for FY23 is not expected to be complete until September, 2024.
Download all SBIR.gov award data either with award abstracts (290MB)
or without award abstracts (65MB).
A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.
The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.
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GAN UV/BLUE SOLID STATE LASER
SBC: Advanced Technologies/Laboratories Intl Topic: N/AEfficient blue and UV lasers are key to high density optical storage, novel communication systems, industrial and medical lasers, and specialized spectroscopic tools. By virtue of their direct bandgap (ranging from 2.09eV-InN to 3.44eV-GaN to 6.2eV-AlN) and lattice-matched heterostructure system, the III-V nitride-based semiconductors have the greatest potential to enable devices that will meet th ...
SBIR Phase I 1994 Department of DefenseMissile Defense Agency -
BULK GROWTH OF GALLIUM NITRIDE SUBSTRATES
SBC: Advanced Technologies/Laboratories Intl Topic: N/AWe propose a novel growth technique to produce low defect density GaN substrates - misfit dislocations will be greatly reduced and the defects due to thermal expansion mismatches will be eliminated. In Phase I the feasibility of the technology will be demonstrated. In Phase II, the process will be scalled and the substrates will be used to fabricate bright blue LEDs in collaboration with Hewlett-P ...
SBIR Phase I 1994 Department of DefenseMissile Defense Agency -
HIGH POWER MOS TRANSISTOR
SBC: Advanced Technologies/Laboratories Intl Topic: N/AThe ability to control large amounts of power (1-150kW) is necessary in applications ranging from aerospace to consumer electronics to industrial power systems and transportation. In order for silicon and gallium arsenide devices to meets such high power densities, tens of devices must be combined to meet the voltage and current requirements. Power combining networks, extra heatsinking and sophist ...
SBIR Phase I 1994 Department of DefenseMissile Defense Agency -
Superconductor Magnetic Memory
SBC: Advanced Technologies/Laboratories Intl Topic: N/ATHE DEVELOPMENT OF A DENSE, FAST SUPERCONDUCTING MEMORY TECHNOLOGY WILL FACILITATE THE INTEGRATION OF SUPERCONDUCTING ELECTRONICS INTO SPACE AND ELECTONIC WARFARE SYSTEMS. A SUPERCONDUCTOR BASED MAGNETIC MEMORY TECHNOLOGY IS PROPOSED WHICH CAN BE USED TO FABRICATE MULTIMEGABIT SUPERCONDUCTOR MEMORIES WITHOUT REQUIRING LARGE SCALE INTEGRATION OF JOSPEHSON JUNCTIONS. THIS MEMORY WELL SUITED FOR HIGH ...
SBIR Phase I 1994 Department of DefenseMissile Defense Agency -
Efficient Dopant Activation In P-type III-V Nitrides
SBC: Advanced Technologies/Laboratories Intl Topic: N/ATHE AVAILABILITY OF EFFICIENT BLUE LIGHT EMITTERS WOULD BREAK OPEN COMMERCIAL AND DEFENSE MARKETS IN FULL COLOR DISPLAYS AND HIGH DENSITY OPTICAL STORAGE SYSTEMS. NITRIDE-BASED DEVICES HAVE THE GREATEST POTENTIAL AS HIGH EFFICIENCY EMITTERS BECAUSE OF THEIR DIRECT BANDGAP AND CONVENIENT HETEROSTRUCTURES SYSTEM. HOWEVER, THE LACK OF OF SUITABLE P-TYPE DOPING TECHNOLOGY HAS GREATLY HINDERED DEVELOPM ...
SBIR Phase I 1994 Department of DefenseMissile Defense Agency -
FERROELECTRIC HETEROSTRUCTURES FOR HIGH-DENSITY DRAMS
SBC: ADVANCED FUEL RESEARCH, INC. Topic: N/AThe innovations of the proposed program are: 1) advancing thin-film deposition technology to achieve fully epitaxial growth of ferroelectric heterostructures on silicon substrates, by using the highly successful pulsed laser deposition (PLD) technique; 2) replacing the Pt bottom electrode with the epitaxial conductive oxide material; 3) achieving a full monolithic integration of high-density ferro ...
SBIR Phase I 1994 Department of DefenseMissile Defense Agency -
HIGH TEMPERATURE SUPERCONDUCTING JOSEPHSON JUNCTIONS ON SILICON SUBSTRATES FOR RF COMMUNICATIONS
SBC: ADVANCED FUEL RESEARCH, INC. Topic: N/AN/A
SBIR Phase I 1994 Department of DefenseMissile Defense Agency -
OBJECTIVE ANALYSIS OF OCEANIC DATA FOR COAST GUARD TRAJECTORY MODELS
SBC: APPLIED MATHEMATICS, INC. Topic: N/ATHE COAST GUARD USED VELOCITY FIELDS FROM VARIOUS OCEAN CIRCULATION MODELS TO PROVIDE INPUT INTO TRAJECTORY MODELS WHICH ARE USED IN SEARCH PLANNING TO DETERMINE SEARCH AREA MOVEMENT. STATISTICAL TECHNIQUES (CALLED OBJECTIVE ANALYSIS), WHICH ARE APPLICATIONS OF THE GAUSS-MARKOV THEOREM, ARE USED BY THE OCEANOGRAPHIC MODELING COMMUNITY TO COMBINE OBSERVATION DATA WITH DYNAMICAL MODELS TO PROVIDE AC ...
SBIR Phase II 1994 Department of Transportation -
Biotechnology Applied Nanostructures
SBC: ASTRALUX, INC. Topic: N/AWE PROPOSE TO APPLY A BIOTECHNOLOGY-BASED PROCESS TO MAKE NANOSTRUCTURES FOR OPTOELECTRONIC APPLICATIONS. THE RESULT WILL BE A UNIFORM ARRAY OF SILICON QUANTUM BOXES OF IDENTICAL DIMENSIONS IN A SILICON LAYER OF CONTROLLED THICKNESS. ALL THREE TECHNIQUES, CONTROLLED THICKNESS OF A CRYSTALLINE Si LAYER, FORMATION OF A UNIFORM ARRAY, AND ITS USE AS A PATTERN FOR REPLICATING A SEMICONDUCTOR ARRAY, HA ...
SBIR Phase II 1994 Department of DefenseMissile Defense Agency -
GROWTH OF GAN SINGLE-CRYSTAL BOULES
SBC: ASTRALUX, INC. Topic: N/AThe proposed project will produce single-crystal boules of GaN that can be sliced and sold as high-quality substrates for the epitaxial growth of differently-doped GaN or of other lattice-matching crystals, or as wafers for use in optoelectronic and acoustooptic applications. The feasibility of GaN boules will be tested on a small scale: to produce cm3-sized crystals. The process will be scles up ...
SBIR Phase I 1994 Department of DefenseMissile Defense Agency