You are here

Award Data

For best search results, use the search terms first and then apply the filters
Reset

The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. Nondestructive Concrete Characterization System

    SBC: Troxler Electronic Laboratories            Topic: A12aT013

    Currently nuclear-based gauges are the most widely used equipment in the construction industry to measure moisture and density of pavement materials. Such measurements are very accurate, rapid, and non-destructive. Attempts to replace these nuclear methods by non-nuclear methods have shown strong limitations. For this project, we propose to integrate nuclear and seismic technologies to measure t ...

    STTR Phase I 2012 Department of DefenseArmy
  2. High Performance, Cost Effective, Planar Molecularly Controlled Semiconductor Resistor (MOCSER) Gas Sensors on InAs and InN

    SBC: KYMA TECHNOLOGIES, INC.            Topic: A12aT014

    We plan to implement a planar Molecularly Controlled Semiconductor Resistor (MOCSER) gas sensor on both InAs and InN platforms for the ppt-ppm detection of NOx and H2O. Kyma Technologies and Duke University will leverage Duke"s leading MOCSER based NOx sensor technology which uses surface functionalization of InAs with hemin (chloroprotoporphyrin IX iron(III)) to create a strong affinity for NOx. ...

    STTR Phase I 2012 Department of DefenseArmy
  3. High Quality, Low Cost, and High Purity AlGaN Epitaxy with Reduced Surface Dislocation Density

    SBC: KYMA TECHNOLOGIES, INC.            Topic: A12aT019

    Aluminum Gallium Nitride (AlGaN) has broad dual use applications for power transistors, high frequency transistors, high power Schottky barrier diodes, and solar-blind detectors, as well as ultra-violet laser diodes and ultra-violet light emitting diodes. This unique material system spans the capabilities that lie between Gallium Nitride (GaN) and Aluminum Nitride (AlN), enabling custom tailored p ...

    STTR Phase I 2012 Department of DefenseArmy
  4. High-Quality AlGaN Epitaxial Films on GaN and AlN Substrates

    SBC: ADROIT MATERIALS, INC.            Topic: A12aT019

    The objective of proposed work is to demonstrate the feasibility of obtaining AlGaN films of any composition with dislocation densities below 1x106 cm-2 on native nitride substrates either by sustaining a pseudomorphic state or by reducing the number of threading dislocations by specific stress relieving schemes at the interfaces or within the thickness of the layers.

    STTR Phase I 2012 Department of DefenseArmy
US Flag An Official Website of the United States Government