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The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

Displaying 1 - 10 of 30 results
 
  • Record 1 TO 30

  1. ULTRASONIC NONDESTRUCTIVE TECHNIQUES AND INSTRUMENTATION FORTRANSPARENT ENCLOSURES OF HIGH PERFORM A/C

    SBC: AMERICAN PHOTONICS TECHNOLOGY, INC.            Topic: N/A

    N/A

    SBIR Phase I 1989 Department of DefenseAir Force

  2. GaP ZnS for Blue Light Emitting Diodes

    SBC: ASTROPOWER, INC.            Topic: N/A

    AstroPower is developing a two-junction monolithic tandem solar cell composed of (AlxGa1-x)0.51In.49P lattice matched to GaAs for use as the top cell in a three-junction, two-terminal tandem stack. This tunable bandgap material system is capable of current matching, at 2.03eV, in a two-junction monolithic tandem solar cell two terminal design of (AlxGa1-x)0.51In0.49P/GaAs yielding a best case pred ...

    SBIR Phase II 1993 Department of DefenseMissile Defense Agency

  3. LIGHTWEIGHT, LIGHT-TRAPPED, THIN GAAS SOLAR CELL FOR SPACECRAFT APPLICATIONS

    SBC: ASTROPOWER, INC.            Topic: N/A

    ASTROPOWER IS PROPOSING THE DEVELOPMENT OF AN ULTRA-LIGHTWEIGHT, HIGH PERFORMANCE, THIN LIGHT TRAPPING GAAS SOLAR CELL FOR ADVANCED SPACE POWER SYSTEMS. A THIN DEVICE LEADS TO HIGHER PERFORMANCE IN TERMS OF OPEN CIRCUIT VOLTAGE, RADIATION RESISTANCE, AND SPECIFIC POWER. IN A THIN DEVICE, THE INCORPORATION OF LIGHT TRAPPING TO EXTEND THE OPTICAL PATH LENGTH PERMITS GREATER CURRENT GENERATIC THAN CA ...

    SBIR Phase II 1993 Department of DefenseAir Force

  4. High Specific Power, Electrostatically Bonded, Ultra-thin Gaas

    SBC: ASTROPOWER, INC.            Topic: N/A

    ASTROPOWER PROPOSES TO DEVELOP A LIGHTWEIGHT, HIGH PERFORMANCE, ULTRA-THIN ELECTROSTATICALLY BONDED GaAs SOLAR CELL WITH COPLANAR BACK CONTACTS. THE INNOVATIVE DESIGN INCORPORATES LIGHT TRAPPING, ADHESIVELESS COVER SLIDE BONDING, AND ELIMINATES GRID SHADING. THIS NOVEL DEVICE WILL EXHIBIT INCREASED EFFICIENCY AND SPECIFIC POWER DUE TO THE HIGHER OPEN CIRCUIT VOLTAGE AND SHORT CIRCUIT CURRENT OBTAI ...

    SBIR Phase I 1993 Department of DefenseMissile Defense Agency

  5. Monolithically Interconnected, Thin Silicon Solar Cell Array

    SBC: ASTROPOWER, INC.            Topic: N/A

    N/A

    SBIR Phase I 1993 Department of DefenseMissile Defense Agency

  6. THIN CRYSTALLINE INDIUM-PHOSPHIDE ON INSULATING SUBSTRATES

    SBC: ASTROPOWER, INC.            Topic: N/A

    N/A

    SBIR Phase I 1989 Department of DefenseMissile Defense Agency

  7. HIGH TEMPERATURE SURVIVABLE INDIUM PHOSPHIDE SOLAR CELLS

    SBC: ASTROPOWER, INC.            Topic: N/A

    N/A

    SBIR Phase I 1989 Department of DefenseMissile Defense Agency

  8. REMOVAL OF VOLATILE ORGANIC COMPOUNDS FROM GASEOUS EFFLUENT STREAMS BY NOVEL PERFLUOROMEMBRANES

    SBC: COMPACT MEMBRANE SYSTEMS, INC.            Topic: N/A

    N/A

    SBIR Phase I 1993 Environmental Protection Agency

  9. A NEW METHOD FOR LINEAR SEQUENCE GENERATOR CONFIGURATION ESTIMATION

    SBC: Cynetics Corp.            Topic: N/A

    THERE IS A NEED TO IMPROVE RECEPTION OF AND SYNCHRONIZATION OF WIDEBAND SIGNALS OF UNKNOWN PARAMETERS. FURTHER DEVELOPMENT OF THE MATHEMATICAL THEORY OF THE ESTIMATION OF GENERATOR CONFIGURATIONS FROM THEIR OUTPUTS WILL HELP TO ACCOMPLISH THIS GOAL. A PROMISING APPROACH IS TO APPLY SHIFT-AND-ADD AND OTHER PROPERTIES OF LINEAR SEQUENCES TO THE DETERMINATION OF THE GENERATOR CONFIGURATION. A PROPOSE ...

    SBIR Phase I 1989 Department of DefenseAir Force

  10. ELECTRON CYCLOTRON RESONANCE (ECR) SEMICONDUCTOR ETCHING PROCESS CONTROL BY ELLIPSOMETRY

    SBC: J. A. Woollam Co., Inc.            Topic: N/A

    THE NEED FOR SMALLER SEMICONDUCTOR DEVICE STRUCTURES FOR USE IN VERY HIGH SPEED MICROELECTRONICS REQUIRES A NEW GENERATION OF PLASMA ETCHING TECHNOLOGY. ECR PROMISES TO PROVIDE FEATURES AS SMALL AS 0.2 MICRONS IN SIZE, AS WELL AS A HIGH DEGREE OF ETCHING ANISOTROPY, SELECTIVITY, ETCH RATES, AND LOW DAMAGE. FOR MANUFACTURING PROCESS CONTROL INVOLVING ECR ETCHING IN PRODUCTION OF ELECTRONICS AND OPT ...

    SBIR Phase II 1993 Department of DefenseArmy
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