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Award Data
The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.
Download all SBIR.gov award data either with award abstracts (290MB)
or without award abstracts (65MB).
A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.
The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.
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Covert Optically-Reporting Threat-Functionalized Nanomaterials
SBC: VOXTEL, INC. Topic: DTRA122003The Defense Threat Reduction Agency (DTRA) and the U.S. Strategic Command Center for Combating Weapons of Mass Destruction (SCC-WMD) requires transformational materials technology to support the intelligence, surveillance, and reconnaissance (ISR) of personnel and materials associated with weapons of mass destruction (WMD) development, manufacturing, and proliferation. Voxtel, Inc. proposes to fa ...
SBIR Phase I 2013 Department of DefenseDefense Threat Reduction Agency -
Dynamic Frequency Passive Millimeter-Wave Radiometer Based on Optical Up-Conversion
SBC: PHASE SENSITIVE INNOVATIONS INC Topic: 941DIn the proposed effort, we will leverage this extensive experience and capabilities to realize a frequency agile mmW radiometer that can cover the range of DC-110 GHz and can be scaled to DC-200 GHz under Phase II. Ours is a photonic system that multiplies and up-coverts a low-frequency reference signal onto an optical carrier (laser) using EO modulation, then uses the modulation sidebands to inj ...
SBIR Phase I 2013 Department of CommerceNational Oceanic and Atmospheric Administration -
Scalable Single- and Multi-"Boule"Bulk GaN Substrate HVPE Production Tool
SBC: STRUCTURED MATERIALS INDUSTRIES, INC. Topic: DTRA122001GaN-based devices are currently grown on foreign substrates such as SiC and Al2O3, due to the lack of high quality GaN substrates. It is well known that the use of foreign substrates limits device performance due to a high dislocation density in the GaN film. Structured Materials Industries, Inc. (SMI) has developed a hybrid HVPE approach to grow high quality GaN device films. In this SBIR proj ...
SBIR Phase I 2013 Department of DefenseDefense Threat Reduction Agency
