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Award Data

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The Award database is continually updated throughout the year. As a result, data for FY20 is not expected to be complete until September, 2021.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

  1. GALLIUM ARSENIDE ON SILICON FOR MICROELECTRONIC AND OPTOELECTRONIC INTEGRATED CIRCUITS

    SBC: ASTROPOWER, INC.            Topic: N/A

    THE GROWTH OF DEVICE QUALITY, LARGE AREA GAAS EPITAXIAL LAYERS ON SILICON SUBSTRATES IS RECOGNIZED AS AN IMPORTANT TECHNOLOGICAL DEVELOPMENT. THE QUALITY OF HETEROEPITAXIAL LAYERS OF GAAS ON SILICON ARE LIMITED BY GAAS-SI LATTICE MISMATCH AND THERMAL COEFFICIENT MISMATCH. THE DEFECT DENSITY OF THE GAAS EPILAYER IS DIRECTLY RELATED TO THE INTERFACE AREA. OUR LABORATORIES HAVE DEMONSTRATED A VIABLE ...

    SBIR Phase II 1989 National Science Foundation
  2. N/A

    SBC: COMPACT MEMBRANE SYSTEMS, INC.            Topic: N/A

    N/A

    SBIR Phase II 2001 National Science Foundation
  3. N/A

    SBC: NUVOGEN RESEARCH, LLC            Topic: N/A

    N/A

    SBIR Phase II 2001 National Science Foundation
  4. IMPROVEMENT OF IMAGING DETECTORS OF INFRARED, VISIBLE, AND ULTRAVIOLET RADIATION

    SBC: Photometrics Ltd            Topic: N/A

    CHARGE COUPLED DEVICES (CCDS) WITH HIGH SENSITIVITY IN THE BLUE-VISIBLE AND ULTRAVIOLET SPECTRAL REGION ARE REQUIRED FOR MANY PROPOSED INVESTIGATIONS IN ASTRONOMY. THE BEST APPROACH TO IMPROVE CCD SENSITIVITY IN THESE WAVELENGTHS IS THINNED, BACKSIDE ILLUMINATION, BUT SUCH DEVICES ARE NOT CURRENTLY COMMERCIALLY AVAILABLE. COMMERCIAL DEVICES PRODUCED IN THE PAST EXHIBITED PROBLEMS INCLUDING LOW QUA ...

    SBIR Phase II 1989 National Science Foundation
  5. SBIR Phase II: Structures for reduced critical current to enable Spin Torque Magnetoresistive Random Access Memory

    SBC: Everspin Technologies, Inc.            Topic: PhaseII

    This Small Business Innovation Research (SBIR) Phase II project aims to demonstrate a high-performance spin torque magnetoresistive random access memory (ST-MRAM). ST-MRAM technology promises a powerful combination of non-volatility, high density, high speed, and low power. The major impediment to commercializing ST-MRAM has been that the write current for programming the magnetic tunnel junction ...

    SBIR Phase II 2011 National Science Foundation
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