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The Award database is continually updated throughout the year. As a result, data for the given year is not complete until April of the following year. Annual Reports data is a snapshot of agency reported information for that year and hence might look different from the live data in the Awards Information charts.

  1. ACTIVATED METAL DECOY FOR LOW IR SIGNATURE AIRCRAFT

    SBC: Alloy Surfaces Company, Inc.            Topic: N/A

    ACTIVATED STEEL FOIL FABRICATED INTO ELEMENTS TO BE PACKAGED AS EXPENDABLE DECOYS HAS SHOWN GOOD PERFORMANCE IN LOW IR SIGNATURE APPLICATIONS. THE PRESENT BATCH PRODUCTION PROCESS FOR THESE FOILS ENTAILS, IN PART, TWENTY HOURS OF FURNACE TREATMENT. A COMBINATION OF NINE SEPARATE OPERATIONS, LOW PRODUCTION RATES AND HIGH LABOR COSTS YIELDS A UNIT MANUFACTURING COST OF MORE THAN $250.00. WE PROPOSE ...

    SBIR Phase I 1990 Department of DefenseNavy
  2. ALUMINUM-GALLIUM-ARSENIDE TOP SOLAR CELL FOR MECHANICAL ATTACHMENT TO A SILICON CONCENTRATOR WITH IMPROVED AMO EFFICIENCY

    SBC: ASTROPOWER, INC.            Topic: N/A

    INCREASES IN SOLAR CELL EFFICIENCY CAN BE ACHIEVED WITH TANDEM MULTI-JUNCTION STRUCTURES TO IMPROVE THE PERFORMANCE AND SCALE OF SPACE PHOTOVOLTAIC CONCENTRATORS. THE "TOP SOLAR CELL" TANDEM APPROACH COULD INCREASE ENERGY CONVERSION EFFICIENCY BY AS MUCH AS 100%. A SELF-SUPPORTING ALUMINUM-GALLIUM-ARSENIDE (ALGAAS) TOP SOLAR CELL IS BEING DEVELOPED FOR MECHANICAL ATTACHMENT TO A SILICON CONCENTRAT ...

    SBIR Phase II 1990 Department of DefenseMissile Defense Agency
  3. HIGH TEMPERATURE SURVIVABLE CONTACTS FOR GALLIUM ARSENIDE SPACE SOLAR CELLS

    SBC: ASTROPOWER, INC.            Topic: N/A

    EXISTING METALLIC-TYPE CONTACTS ON GALLIUM ARSENIDE (GAAS) HAVE NOT BEEN STABLE AT HIGH TEMPERATURES BECAUSE OF INTERDIFFUSION AND/OR ALLOYING OF THE GAAS TOP LAYER. HIGH TEMPERATURE CONTACTS TO GAAS SPACE PHOTOLTAIC CELLS ARE BEING DEVELOPED BASED ON THE FORMATION OF A HIGHLY-STABLE INTERMEDIATE DEGENERATE SEMICONDUCTOR LAYER BETWEEN THE GAAS AND A HIGH TEMPERATURE METAL ALLOY. THE INTERMEDIATE S ...

    SBIR Phase II 1990 Department of DefenseMissile Defense Agency
  4. HIGH TEMPERATURE SURVIVABLE INDIUM PHOSPHIDE SOLAR CELLS

    SBC: ASTROPOWER, INC.            Topic: N/A

    HIGH TEMPERATURE (>600 DEGREES CELSIUS) INDIUM PHOSPHIDE (INP) SPACE SOLAR CELLS ARE BEING DEVELOPED TO ELIMINATE THEPROBLEMS, SURFACE DECOMPOSITION AND CONTACT FAILURE, ENCOUNTERED WHEN INP SOLAR CELLS ARE EXPOSED TO HIGH TEMPERATURES. KEY TO THIS PROGRAM ARE THE USE OF AN ENCAPSULANT LAYER TO ARREST SURFACE DECOMPOSITION AND A HIGHLY-STABLE INTERMEDIATE DEGENERATE SEMICONDUCTOR CONTACT SYSTEM DE ...

    SBIR Phase II 1990 Department of DefenseMissile Defense Agency
  5. HIGH-PERFORMANCE RADIATION-HARD ULTRA-THIN SILICON-UNDER-GLASS SOLAR CELLS

    SBC: ASTROPOWER, INC.            Topic: N/A

    N/A

    SBIR Phase I 1990 Department of DefenseMissile Defense Agency
  6. HIGH-PERFORMANCE RADIATION-HARD ULTRA-THIN SILICON-UNDER-GLASS SOLAR CELLS

    SBC: ASTROPOWER, INC.            Topic: N/A

    N/A

    SBIR Phase I 1990 Department of DefenseMissile Defense Agency
  7. PULSE TO DIGITAL CONVERSION SYSTEM

    SBC: Moscow Electronics Co            Topic: N/A

    THE COMPLETE DESIGN IS PRESENTED WITHIN THIS PROPOSAL FOR A SYSTEM WHICH WILL PROVIDE A PRECISE, ONE-STEP CONVERSION DIRECTLY FROM A PULSE TRAIN INPUT TO A DIGITIZED PULSE RATE OUTPUT. IT IS A DISTRIBUTED PROCESSOR SYSTEM EMPLOYING A MASTER CONTROL PROCESSOR AND FROM 2 TO 30 IDENTICAL PULSE MODULES. THE PULSE MODULE IS A STANDALONE UNIT WHICH PERFORMS THE PULSE PERIOD MEASUREMENT. THE MICROPROCESS ...

    SBIR Phase II 1990 Department of DefenseAir Force
  8. THIN CRYSTALLINE INDIUM-PHOSPHIDE ON INSULATING SUBSTRATES

    SBC: ASTROPOWER, INC.            Topic: N/A

    UNIFORM LARGE AREA, DEVICE QUALITY INDIUM PHOSPHIDE (INP) EPITAXIAL LAYERS ON INSULATING SUBSTRATES COULD LEAD TO THE DEVELOPMENT OF A NEW GENERATION OF PRODUCIBLE, RADIATION-HARDENED MICROELECTRONIC AND OPTOELECTRONIV INTEGRATED CIRCUITS. INP ALLOYS OFFER THE ADVANTAGES OF: PROVEN RESISTANCE TO RADIATION DAMAGE; LOWER SURFACE RECOMBINATION THAN GAAS; HIGH PEAK ELECTRON VELOCITY; AND BANDGAPS THAT ...

    SBIR Phase II 1990 Department of DefenseMissile Defense Agency

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