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Award Data

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The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. METALORGANIC MOLECULAR BEAM EPITAXY

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    METALORGANIC MOLECULAR BEAM EPITAXY (MOMBE) IS A SEMICONDUCTOR GROWTH TECHNIQUE THAT HAS THE POTENTIAL FOR COMBINING THE BEST FEATURES OF MOLECULAR BEAM EPITAXY WITH THOSE OF ORGANOMETALLIC VAPOR PHASE EPITAXY (OMVPE). A MAJOR PROBLEM HINDERING DEVELOPMENT OF MOMBE TECHNIQUES FOR GROWING GROUP III/V SEMICONDUCTORS IS THE AVAILABILITY OF APPROPRIATELY DESIGNED SOURCE REAGENTS THAT PERMIT EFFICIENT ...

    SBIR Phase II 1990 Department of DefenseMissile Defense Agency
  2. BARIUM-TITANIUM OXIDE THIN FILM OPTICAL GUIDED-WAVE PHASE MODULATOR

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    FERROELECTRIC MATERIALS SUCH AS BARIUM TITANIUM OXID (BARIO3) HAVE ELECTRO-OPTIC COEFFICIENTS THAT ARE AN ORDER OF MAGNITUDE GREATER THAN THAT OF THE MORE COMMON LITHIUM NIOBIUM OXIDE (LINBO3). THEIR SUPERIOR POTENTIAL HAS NOT BEEN EXPLOITED BECAUSE THE ROUTINE GROWTH OF LARGE DEFECT-FREE OPTICAL QUALITY CRYSTALS HAS NOT BEEN ACHIEVED. IN THIS INVESTIGATION, PLANAR WAVEGUIDES ARE BEING FABRICATED ...

    SBIR Phase II 1990 Department of DefenseMissile Defense Agency
  3. ULTRAFAST DIAMOND FILM PHOTOCONDUCTIVE DETECTOR

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    OVER THE PAST DECADE STUDIES HAVE INDICATED THAT IT IS POSSIBLE TO UTILIZE THE ULTRAFAST (PICOSECOND) RESPONSE TIMEOF A PHOTOCONDUCTOR TO DETECT AND TIME RESOLVE THE RAPID VARIATIONS OF LIGHT FROM A RAPIDLY CHANGING SOURCE SUCH AS APULSED LASER, A LASER FUSION EXPERIMENT, A DIRECTED ENERGY WEAPON OR A NUCLEAR WEAPONS EXPLOSION. IN ADDITION TO THE RAPID TEMPORAL EVOLUTION OF THE LIGHT OUTPUT FROM S ...

    SBIR Phase II 1990 Department of DefenseMissile Defense Agency
  4. CW LASER MODULATOR

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    RECENT DEVELOPMENTS IN OPTICAL COMMUNICATION TECHNOLOGY ARE VERY ENCOURAGING FOR THE POTENTIAL OPERATION OF OPTICAL SATELLITE CROSSLINKS. MOST NOTABLE IS THE DEVELOPMENT OF HIGH EFFICIENCY ND:YAG RING LASERS WHICH WOULD BE ATTRACTIVE TRANSMITTERS IF WIDE BANDWIDTH EXTERNAL PHASE MODULATORS COULD BE DEVELOPED. A TRAVELING-WAVE CONFIGURATION GIVES THE MAXIMUM BANDWIDTH FOR ELECTRO-OPTIC MODULATORS. ...

    SBIR Phase I 1990 Department of DefenseAir Force
  5. SCHOTTKY AND OHMIC CONTACTS FOR B-SILICON CARBIDE

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    HIGH POWER SEMICONDUCTORS USING SILICON AND GAAS ARE LIMITED TO ENVIRONMENTS THAT ARE LESS THAN 300 DEG C IN TEMPERATURE DUE TO LOW BANDGAPS, LOW BREAKDOWN FIELDS AND LOW THERMAL CONDUCTIVITIES. 3C-SIC(B-SIC) HAS BEEN IDENTIFIED AS A MATERIAL WITH EXCELLENT POTENTIAL TO FULFILL THE REQUIREMENTS OF A HIGH POWER, HIGH TEMPERATURE SEMICONDUCTOR WITH HIGH RADIATION HARDNESS. THE KEY TO DEVELOPING DEVI ...

    SBIR Phase I 1990 Department of DefenseAir Force
  6. NONLINEAR POLYMER ETALON FOR HIGH RESOLUTION OPTICAL COMPUTING

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    THE USE OF OPTICAL SYSTEMS IN HIGH SPEED SIGNAL PROCESSING APPLICATIONS IS DESTINED BECAUSE OF THE OVERWHELMING ADVANTAGES OF PARALLEL DATA TRANSMISSION. MANY APPLICATIONS REQUIRE NONLINEAR TRANSFORMATIONS TO BE PERFORMED IN PARALLEL AT HIGH SPEED AND RESOLUTION. THE USE OF ORGANIC MATERIALS WITH LARGE OPTICAL NONLINEARITIES IS PARTICULARLY ATTRACTIVE BECAUSE OF THEIR FAST RESPONSE, BROADBAND TRAN ...

    SBIR Phase I 1990 Department of DefenseNavy
  7. GROUP IV SEMICONDUCTOR ATOMIC LAYER EPITAXY

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    WIDESPREAD APPLICATION OF HIGH PERFORMANCE DEVICES BASED ON III-V, IV-IV, OR DIAMOND COMPOUND SEMICONDUCTORS WILL DEPEND ON THE DEVELOPMENT OF MANUFACTURING METHODS. RECENTLY, DR. MAX YODER OF ONR PROPOSED A RADICALLY NEW GROWTH SEQUENCE APPLICABLE TO THE GROUP IV SEMICONDUCTORS IN GENERAL AND TO DIAMOND IN PARTICULAR. FOR DIAMOND, IT IS ANTICIPATED THAT ALTERNATE INTRODUCTION OF CH4 AND CF4 TO TH ...

    SBIR Phase I 1990 Department of DefenseNavy
  8. NOVEL PROCESSING OF COATED BORON PARTICLES

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    SOLID METAL FUELS CAN PROVIDE GREATER THRUST AND FUEL EFFICIENCY THAN LIQUID FUELS. BORON PARTICLES, A MOST ATTRACTIVE SOLID FUEL ON A THERMOCHEMICAL BASIS, IGNITE UPON EXPOSURE TO MOIST AIR AND UNDERGO A RAPID COMBUSTION WITH HIGH VOLUMETRIC HEAT RELEASE. UNFORTUNATELY, THIS REACTION IS SIGNIFICANTLY SLOWED BY IMPURITIES IN THE BORON AND BY THE FORMATION OF OXIDES UPON THE PARTICLE SURFACE DURING ...

    SBIR Phase I 1990 Department of DefenseNavy
  9. RAD HARD FERROELECTRIC MEMORIES

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    N/A

    SBIR Phase I 1990 Department of DefenseDefense Advanced Research Projects Agency
  10. DIAMOND COLD CATHODES FOR FLAT PANEL DISPLAYS

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    N/A

    SBIR Phase I 1990 Department of DefenseMissile Defense Agency
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