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The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. Active, Adaptive Resonant Tuned Mass Systems for Space Applications

    SBC: HOOD TECHNOLOGY CORPORATION            Topic: N/A

    We propose to build upon prior experience to develop hardware customized to a selected spacecraft application. This hardware would employ an adaptive mechanical resonance as a vibration control element. Two related uses of such a device are described; the tuned vibration absorber and the tuned mass damper. Hood Technology Corporation has built and tested such devices for other applications. We ...

    SBIR Phase II 1996 Department of DefenseAir Force
  2. Four-Quadrant Resonant Drive with Ports for Other Electrical Equipment

    SBC: Electronic Power            Topic: N/A

    A new quasi-resonant converter, called the unipolar series resonant converter ("USRC"), will be adapted as a four-quadrant drive for electric vehicles ("EVs"). With zero current and voltage switching, it will high modulation frequency (over 30 khz), thus driving a motor silently and efficiently throughout the speed range. The USRC produces any waveform required by any type of EV motor. It produces ...

    SBIR Phase II 1996 Department of DefenseDefense Advanced Research Projects Agency
  3. GaInAsSb Infrared Laser Diodes

    SBC: ASTROPOWER, INC.            Topic: N/A

    There is much need for lasers with emission wavelengths in the mid-infrared (2 to 5 microns) for applications that include molecular spectroscopy, environmental and atmospheric trace gas analysis, long haul fiber communications, laser surgery, and atmospheric free-space laser transmission. The Lebedev Physical Institute in Moscow has reported double heterostructure GaInAsSb/GaAlAsSb lasers emittin ...

    SBIR Phase II 1996 Department of DefenseMissile Defense Agency
  4. LOW-DEFECT SIC MATERIAL BY LIQUID-PHASE EPITAXIAL LATERAL OVERGROWTH

    SBC: ASTROPOWER, INC.            Topic: N/A

    We propose a new epitaxial growth technology for low-defect SiC substrates based on metallic solution growth of SiC on silicon and SiC wafers. A significant feature of the our approach is the use of epitaxial lateral overgrowth for "defect filtering." In the Phase I proposal, we present arguments that the proposed technology will lead to SiC material of unprecedented quality with respect to defect ...

    SBIR Phase II 1996 Department of DefenseMissile Defense Agency
  5. Novel Membrane-Based System for Shipboard Treatment of GrayWater and Oily Waste Water

    SBC: BEND RESEARCH, INC.            Topic: N/A

    Navy ships generate large valumes of graywater and oily wastewaters but most have minimal capacities for storing these wastes. The goal of this program is to develop a membrane-based shipboard graywater-treatment system (GTS) that allows recovery of more than 95% of the wastewater, reducing the volume of wastewater that must be stored by a factor of at least 20. Key to this system is development o ...

    SBIR Phase II 1996 Department of DefenseNavy
  6. Reactor Technology for Aqueous Phase Catalytic Oxidation of Organics

    SBC: UMPQUA RESEARCH COMPANY            Topic: N/A

    An investigation of the efficacy of low temperature aqueous phase catalytic oxidation for the destruction of organic water pollutants of significance to the U.S. Armed Forces is proposed. It has been shown in our laboratory that organic contaminants can be mineralized in the aqueous phase using dioxygen over noble metal catalysts at temperatures between 120-160C. Work to date has been an outgrow ...

    SBIR Phase II 1996 Department of DefenseAir Force
  7. Rectifying Junctions for High Temperature, High Power Electronics

    SBC: 3c Semiconductors            Topic: N/A

    The single most important type of metal/SiC junction is the n-type, rectifying Schottky diode, because it is the voltage blocking junction in all majority carrier devices. A reliable junction of this type for n-type SiC is the key to its development for high temperature, power conditioning electronics. Phase I will demonstrate that osmium is the ideal metal for forming such junctions. Phase II wil ...

    SBIR Phase II 1996 Department of DefenseMissile Defense Agency
  8. Title missing

    SBC: Planar America, Inc.            Topic: N/A

    N/A

    SBIR Phase II 1996 Department of DefenseNavy
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