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The Award database is continually updated throughout the year. As a result, data for the given year is not complete until April of the following year. Annual Reports data is a snapshot of agency reported information for that year and hence might look different from the live data in the Awards Information charts.

  1. 128X128 ELEMENT MONOLITHIC DUAL BAND HGCDTE STARING ARRAYS

    SBC: ADVANCED DEVICE TECHNOLOGY, INC.            Topic: N/A

    N/A

    SBIR Phase I 1991 Department of DefenseMissile Defense Agency
  2. AUTO MANUFACTURE OF VERY SMALL ELECTRIC MOTORS

    SBC: AIREX CORP.            Topic: N/A

    THE PROJECT OBJECTIVE IS TO DETERMINE FEASIBILITY OF MACHINE WINDING CERTAIN MULTI-PHASE, MULTI-POLE DEVICES IDENTIFIED AS CURRENTLY BEING HAND WOUND AND THE FOCUS OF THIS SOLICITATION. THE EFFORT INCLUDES A STUDY OF THE DEVICES TO IDENTIFY THE PROBLEMS ASSOCIATED WITH THE MECHANIZATION OF THE WINDING PROCESS, AS WELL AS A REVIEW OF EXISTING WINDING EQUIPMENT THAT MIGHT BE APPLICABLE IN EXISTING O ...

    SBIR Phase II 1991 Department of DefenseAir Force
  3. IR/RF Expendable

    SBC: Alloy Surfaces Company, Inc.            Topic: N/A

    esign of the IR/RF payloads.

    SBIR Phase I 1991 Department of DefenseNavy
  4. BIST FOR OTS AND ASIC VLSI DESIGNS WITH VHDL

    SBC: ALTERNATIVE SYSTEM CONCEPTS, INC.            Topic: N/A

    N/A

    SBIR Phase I 1991 Department of DefenseArmy
  5. LARGE-SCALE LIGUID PHASE EPITAXY OF MULTIPLE LAYER III-V SEMICONDUCTOR COMPOUNDS

    SBC: ASTROPOWER, INC.            Topic: N/A

    ASTROPOWER PROPOSES TO DEVELOP A LARGE-SCALE, HIGH-THROUGHPUT LIQUID PHASE EPITAXIAL (LPE) REACTOR FOR THEFABRICATION OF MULTI-LAYER III-V SEMICONDUCTOR DEVICES. A DESIGN GOAL OF 1000 CM(2) PER HOUR HAS BEEN ESTABLISHED WHILE MAINTAINING THE KEY FEATURES OF LPE: 1) HIGHEST MATERIAL QUALITY OF ALL EPITAXIAL GROWTH PROCESSES, 2) SIMPLICITY AND SAFETY (AS COMPARED TO MOCVD AND MBE), AND 3) LOW COST ( ...

    SBIR Phase I 1991 National Science Foundation
  6. CONFORMAL HETEROEPITAXY OF GAAS AND INP ON SILICON AND SAPPHIRE SUBSTRATES

    SBC: ASTROPOWER, INC.            Topic: N/A

    CONFORMAL VAPOR PHASE EPITAXY (CVPE) IS A NEW TECHNIQUE FOR TWO-DIMENSIONAL CONSTRAINED GROWTH OF THIN SEMICONDUCTOR FILMS USING A HALIDE VAPOR TRANSPORT PROCESS. THIS TECHNIQUE WILL BE APPLIED TO THE GROWTH OF GAAS AND INP FILMS ON SILICON AND SAPPHIRE SUBSTRATES. EPITAXIAL-LATERALOVERGROWTH WITH HIGH ASPECT RATIOS IS ACHIEVED BY CONFINING GROWTH TO A THIN VOID SPACE BOUNDED BY AN OXIDE-MASK COAT ...

    SBIR Phase I 1991 National Science Foundation
  7. HIGH-PERFORMANCE RADIATION-HARD ULTRA-THIN SILICON-UNDER-GLASS SOLAR CELLS

    SBC: ASTROPOWER, INC.            Topic: N/A

    N/A

    SBIR Phase II 1991 Department of DefenseMissile Defense Agency
  8. HIGH-PERFORMANCE RADIATION-HARD ULTRA-THIN SILICON-UNDER-GLASS SOLAR CELLS

    SBC: ASTROPOWER, INC.            Topic: N/A

    N/A

    SBIR Phase II 1991 Department of DefenseMissile Defense Agency
  9. THIN CRYSTALLINE SILICON FILM PHOTOVOLTAIC SOLAR CELLS AND ARRAYS ON FLEXIBLE SUBSTRATES

    SBC: ASTROPOWER, INC.            Topic: N/A

    N/A

    SBIR Phase I 1991 Department of DefenseMissile Defense Agency
  10. HIGH-SPEED BIPHASE MICRODROPS

    SBC: Dean Technology Inc            Topic: N/A

    THE PROGRESS OF THE TECHNOLOGY OF PROMISING NEW MATERIALS LIKE CERAMICS CARBIDES AND NITRIDES IS IMPEDED BY A LACK OF GOOD METHODS TO MACHINE THEM. WE PROPOSE TO DEVELOP A NOVELMACHINING METHOD BASED ON THE IMPACT OF VERY HIGHSPEED MICRODROPLETS. WATER DROP IMPACT HAS A SURPRISINGLY LARGE ERROSIVE EFFECT. THIS PHENOMENA CAN BE EXPLAINED BY THE FACT THAT THE STRESSES IN THE TARGET ARE OVER 20 TIMES ...

    SBIR Phase I 1991 National Science Foundation

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