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The Award database is continually updated throughout the year. As a result, data for FY20 is not expected to be complete until September, 2021.

  1. Avalanche Photodiode Arrays

    SBC: Advanced Photonix            Topic: N/A

    This research will substantially advance the state of the art in single-chip photodetector arrays. Advanced Photonix, Inc. manufactures unique large-area, single-element silicon avalanche photodiodes (currently 16mm active-area diameter,but potentially up to 75mm). The research will demonstrate feasibility (Phase I) and produce a prototype (Phase II) of such a photodetector subdivided into an arra ...

    SBIR Phase II 1993 Department of DefenseMissile Defense Agency
  2. High Quantum Efficiency Nd:YAG Photocathode

    SBC: Advanced Scientific Concepts, LLC            Topic: N/A

    Phase I will develop an advanced photocathode for high quantum efficiency, photon-counting sensitivity of 1.06 microsecond, Nd:YAG laser pulses. As far as maximum ladar range is concerned the proposed photocathode is equivalent to an increase of a factor of 15 in laser power. The photocathode is called the High Quantum efficiency Photocathode (HiQ-PC) and is characterized by: (1) High Quantum Effi ...

    SBIR Phase II 1993 Department of DefenseMissile Defense Agency
  3. Super Sensitive Solid-State Detector

    SBC: Advanced Scientific Concepts, LLC            Topic: N/A

    Phase I will develop a breakthrough in a Infrared (IR) detector, called the Super Sensitive Solid-State Infrared Detector because it: does not require indium bumping readout technology; can detect individual IR photons between 2 and 24 micrometers; is insensitive to gamma rays; has very low dark current; and has a large dynamic range from the lowest possible flux to 10E14 photons/cm2-sec. The Supe ...

    SBIR Phase II 1993 Department of DefenseMissile Defense Agency
  4. GaP ZnS for Blue Light Emitting Diodes

    SBC: ASTROPOWER, INC.            Topic: N/A

    AstroPower is developing a two-junction monolithic tandem solar cell composed of (AlxGa1-x)0.51In.49P lattice matched to GaAs for use as the top cell in a three-junction, two-terminal tandem stack. This tunable bandgap material system is capable of current matching, at 2.03eV, in a two-junction monolithic tandem solar cell two terminal design of (AlxGa1-x)0.51In0.49P/GaAs yielding a best case pred ...

    SBIR Phase II 1993 Department of DefenseMissile Defense Agency
  5. High Tc Superconductor- Silicon on Sapphire CMOS Hybrid Circuit

    SBC: CONDUCTUS, INC.            Topic: N/A

    By exploiting previous work on the growth of YBCO and Josephson junctions on buffered sapphire, Conductus will combine silicon CMOS on sapphire with high temperature superconductors, all on a single chip. Conductus will test the ability of the Si MOS devices to withstand the subsequent YBCO processes. Chips will then be tested to determine the effects of the additional processing on the active Si ...

    SBIR Phase II 1993 Department of DefenseMissile Defense Agency
  6. ULTRA-QUIET PLATFORM FOR SDI SENSORS

    SBC: CSA Engineering, Inc.            Topic: N/A

    Dynamic isolation of components and machinery is critical for many SDI and commercial applications. Vibration isolation using soft mounts leads to static misalignment, increased travel requirements, and decreased mount strength, often precluding this approach. The ideal isolator has high static (mount) stiffness, but low stiffness at disturbance frequencies. This SBIR will lead to a family of mode ...

    SBIR Phase II 1993 Department of DefenseMissile Defense Agency
  7. ADVANCED FARE PAYMENT MEDIA

    SBC: Echelon Industries Inc.            Topic: N/A

    THE FEASIBILITY OF SMART CARDS FOR THE PUBLIC TRANSIT INDUSTRY HAS NOT BEEN ESTABLISHED. THERE IS A PERCEPTION THAT SMART CARDS CAN BE USED TO REDUCE THE TOTAL TRANSACTIONCOSTS ASSOCIATED WITH FARE PAYMENT, TO IMPROVE SECURITY, REDUCE FRAUD AND IMPROVE SYSTEM PERFORMANCE AND RIDERSHIP. THE OBJECTIVE OF THIS PROGRAM IS TO DETERMINE THE APPROPRIATENESS OF THESE CLAIMS; THIS WILL BE ACCOMPLISHED BY R ...

    SBIR Phase II 1993 Department of Transportation
  8. Ultra Radiation-Hard, Ultra-Dense, Fast Nonvolatile GaAs Random Access Memory

    SBC: Electro-optek Corp            Topic: N/A

    Electro-Optek proposes to develop a radiation-hard, non-volatile random access memory using an epitaxial InSb Hall element fabricated on gallium arsenide (GaAs) in conjunction with a thin-film layer of permalloy. The permalloy layer serves as the non-volatile memory storage medium while the InSb Hall element acts as the high-speed memory readout. The RAM can be built by very large scale integrated ...

    SBIR Phase II 1993 Department of DefenseMissile Defense Agency
  9. Data Neutronium

    SBC: Hnc, Inc.            Topic: N/A

    Just as solid neutronium is the densest form of ordinary matter, data neutronium is the most highly compressed kind of data -- it is pure information. This project is developing a system to compress data such as imagery and speech into data neutronium. This project is developing a system to compress data such as imagery and speech into data neutronium. We are using two new results: a theory relati ...

    SBIR Phase II 1993 Department of DefenseMissile Defense Agency
  10. MAGNETIC MASS MEMORY WITHOUT MECHANICAL MOTION

    SBC: INTEGRATED MAGNETOELECTRONICS            Topic: N/A

    N/A

    SBIR Phase II 1993 Department of DefenseMissile Defense Agency
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