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The Award database is continually updated throughout the year. As a result, data for the given year is not complete until April of the following year. Annual Reports data is a snapshot of agency reported information for that year and hence might look different from the live data in the Awards Information charts.

  1. MONOLITHIC GAAS LIGHT-EMITTING DIODES ON SILICON VLSI CIRCUITS ELEMENTS

    SBC: ASTROPOWER, INC.            Topic: N/A

    OPTOELECTRONIC SOURCES, INTEGRATED AS MONOLITHIC ELEMENTS ON SILICON VLSI CHIPS, OFFER IMPORTANT ADVANTAGES IN THE TRANSMISSION OF INFORMATION WITHIN THE CHIP OR BETWEEN CHIPS IN ADVANCED COMPUTER SYSTEMS. THE SPEED OF OPTICAL-INTEGRATED VLSI DEVICES IS EXPECTED TO BE CONSIDERABLY HIGHER THAN EQUIVALENT VLSI WITH METALLIC INTERCONNECTS, DUE TO ABSENCE OF THE RC DELAY INHERENT IN THE METALLIC CONDU ...

    SBIR Phase II 1987 Department of DefenseDefense Advanced Research Projects Agency
  2. HIGH-EFFICIENCY THIN-FILM SILICON-ON-GAP SOLAR CELL FOR IMPROVED RADIATION RESISTANCE

    SBC: ASTROPOWER, INC.            Topic: N/A

    THE ULTIMATE HIGH-EFFICIENCY CRYSTALLINE SILICON SOLAR CELL DESIGN CONSISTS OF A THIN FILM OF ELECTRICALLY-ACTIVE SILICON EPITAXIALLY GROWN ON AN OXIDE-OVERCOATED, INFRARED-TRANSPARENT GALLIUM PHOSPHIDE (GAP) SUBSTRATE. IN ADDITION TO HIGH CONVERSION EFFICIENCY AND INTRINSIC RADIATION RESISTANCE DUE TO THE THIN ACTIVE LAYERS, THIS NOVEL DESIGN HAS SEVERAL UNIQUE PERFORMANCE ENHANCING FEATURES. THE ...

    SBIR Phase II 1987 Department of DefenseAir Force
  3. INTEGRATED GAAS EMITTER FOR OPTICAL INTERCONNECTIONS

    SBC: ASTROPOWER, INC.            Topic: N/A

    THE EFFECT OF SCALING DOWN DEVICE DIMENSIONS OF VLSI STRUCTURES AND THE COMBINATION OF INCREASED CIRCUIT COMPLEXITY DURING THE SCALING PROCESS IS PLACING SEVERE LIMITATIONS ON THE MINIMUM PROPAGATION DELAY OF METALLIC INTERCONNECTS. OPTICAL INTERCONNECTS REMOVE THOSE SPEED LIMITATIONS AND OFFER A DEGREE OF FLEXIBILITY THAT ELECTRICAL INTERCONNECTS COULD NEVER OBTAIN. THE KEY OPPORTUNITY IS TO INTE ...

    SBIR Phase I 1987 National Science Foundation
  4. ELECTRONIC GAAS-ON-SILICON MATERIAL FOR ADVANCED HIGH-SPEED OPTOELECTRONIC DEVICES

    SBC: ASTROPOWER, INC.            Topic: N/A

    N/A

    SBIR Phase I 1987 Department of DefenseMissile Defense Agency
  5. DEVICE FOR AUTOMATIC DETECTION OF URINATION

    SBC: JONAS, INC.            Topic: N/A

    OBJECTIVES OF THIS PROJECT ARE TO DEVELOP AN INEXPENSIVE DISPOSABLE UNDERGARMENT DEVICE FOR EARLY AUTOMATIC DETECTION OF URINATION AND TO DESIGN A QUANTITATIVE DEVICE TO BE USED IN CLINICAL RESEARCH AND OTHER APPLICATIONS. THE ELECTRONIC OUTPUT OF THE DETECTOR SYSTEM WILL TRIGGER A SIGNAL TO BE OBSERVED BY THE PERSON WEARING THE GARMENT AND/OR BY OTHERS (NURSE, ETC.). THE DEVICES WILL BE USEFULL A ...

    SBIR Phase II 1987 Department of Health and Human Services
  6. IN-LINE MONITORING OF PARTICULATES IN GAS STREAMS

    SBC: JONAS, INC.            Topic: N/A

    A FEASIBILITY STUDY AND FIELD TESTING OF A NEW PROPRIETARY METHOD CAPABLE OF IN-LINE, REAL-TIME MONITORING OF FLOW OF SOLID AND LIQUID PARTICLES IN GAS STREAM PROPOSED FOR THIS PHASE I PROJECT. THE EXPERIMENTAL TECHNIQUE IN WHICH COMMERCIALLY AVAILABLE INSTRUMENTATION IS USED HAS ALREADY BEEN TESTED IN THE LABORATORY AND IN ONE FIELD APPLICATION. THE LABORATORY TESTS DEMONSTRATED THAT FLOW OF SOLI ...

    SBIR Phase II 1987 Department of Energy

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