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The Award database is continually updated throughout the year. As a result, data for the given year is not complete until April of the following year. Annual Reports data is a snapshot of agency reported information for that year and hence might look different from the live data in the Awards Information charts.

  1. GALLIUM ARSENIDE ON SILICON FOR MICROELECTRONIC AND OPTOELECTRONIC INTEGRATED CIRCUITS

    SBC: ASTROPOWER, INC.            Topic: N/A

    THE GROWTH OF DEVICE QUALITY, LARGE AREA GAAS EPITAXIAL LAYERS ON SILICON SUBSTRATES IS RECOGNIZED AS AN IMPORTANT TECHNOLOGICAL DEVELOPMENT. THE QUALITY OF HETEROEPITAXIAL LAYERS OF GAAS ON SILICON ARE LIMITED BY GAAS-SI LATTICE MISMATCH AND THERMAL COEFFICIENT MISMATCH. THE DEFECT DENSITY OF THE GAAS EPILAYER IS DIRECTLY RELATED TO THE INTERFACE AREA. OUR LABORATORIES HAVE DEMONSTRATED A VIABLE ...

    SBIR Phase II 1989 National Science Foundation
  2. THIN CRYSTALLINE INDIUM-PHOSPHIDE ON INSULATING SUBSTRATES

    SBC: ASTROPOWER, INC.            Topic: N/A

    N/A

    SBIR Phase I 1989 Department of DefenseMissile Defense Agency
  3. HIGH TEMPERATURE SURVIVABLE INDIUM PHOSPHIDE SOLAR CELLS

    SBC: ASTROPOWER, INC.            Topic: N/A

    N/A

    SBIR Phase I 1989 Department of DefenseMissile Defense Agency
  4. AIDS PREVENTION TRAINING FOR MINORITY PARENTS

    SBC: Bethune-cookman Dev Corp            Topic: N/A

    BECAUSE THERE IS NO KNOWN CURE FOR AIDS, NOR ANY CURES CURRENTLY ANTICIPATED, THE MOST EFFECTIVE RESPONSE TO THIS INTERNATIONAL EPIDEMIC MUST BE THROUGH EDUCATION AND PREVENTION. UNFORTUNATELY, OVER A THIRD OF U.S. YOUTHS IN LARGE CITIES HAVE ABANDONED SCHOOL AND, IN CONDUCTING THEIR LIVES IN THE CONTEXT OF STREET CULTURE, ARE AT HIGH RISK FOR CONTRACTING AIDS. PHASE I OF THIS PROJECT AIMS TO DEVE ...

    SBIR Phase I 1989 Department of Health and Human Services
  5. ELECTRONIC GAAS-ON-SILICON MATERIAL FOR ADVANCED HIGH-SPEED OPTOELECTRONIC DEVICES

    SBC: ASTROPOWER, INC.            Topic: N/A

    THE SUCCESSFUL GROWTH OF GAAS ON SILICON SUBSTRATES USING DOUBLE SELECTIVE LIQUID EPITAXIAL (DSLE) PROCESS HAS RECENTLY BEEN ACCOMPLISHED. THESE RESULTS SET THE STAGE FOR THE DEVELOPMENT OF AN EXTREMELY USEFUL MATERIAL--LARGE PLANAR WAFERS OF SMOOTH GAAS ON SILICON. DOUBLE SELECTIVE LIQUID PHASE EPITAXY COULD SIGNIFICANTLY REDUCE THE PROBLEMS CAUSED BY LATTICE MISMATCH AND DIFFERENTIAL THERMAL EXP ...

    SBIR Phase II 1988 Department of DefenseMissile Defense Agency
  6. HIGH TEMPERATURE SURVIVABLE CONTACTS FOR GALLIUM ARSENIDE SPACE SOLAR CELLS

    SBC: ASTROPOWER, INC.            Topic: N/A

    N/A

    SBIR Phase I 1988 Department of DefenseMissile Defense Agency
  7. ALUMINUM-GALLIUM-ARSENIDE TOP SOLAR CELL FOR MECHANICAL ATTACHMENT TO A SILICON CONCENTRATOR WITH IMPROVED AMO EFFICIENCY

    SBC: ASTROPOWER, INC.            Topic: N/A

    N/A

    SBIR Phase I 1988 Department of DefenseMissile Defense Agency
  8. GALLIUM ARSENIDE ON SILICON FOR MICROELECTRONIC AND OPTOELECTRONIC INTEGRATED CIRCUITS

    SBC: ASTROPOWER, INC.            Topic: N/A

    N/A

    SBIR Phase I 1988 National Science Foundation
  9. CORROSION BEHAVIOR OF METAL MATRIX COMPOSITES

    SBC: Corrosion Testing Labs Inc            Topic: N/A

    THE PRIMARY OBJECTIVES OF THIS RESEARCH PROGRAM IN PHASE I ARE TO DEVELOP CORROSION DATA ON A SERIES OF SIC/AL AND GR/AL METAL MATRIX COMPOSITES. SINCE THESE MATERIALS SHOW SIGNIFICANT POTENTIAL FOR USE IN NAVAL APPLICATIONS, THEIR CORROSION RESISTANCE WILL BE EVALUATED IN DIFFERENT KINDS OF MARINE EXPOSURES. DATA FROM LONGTERM EXPOSURES, SHORT-TERM ACCELERATED ELECTROCHEMICAL TESTS, AND METALLURG ...

    SBIR Phase I 1988 Department of DefenseNavy

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