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Award Data

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The Award database is continually updated throughout the year. As a result, data for FY20 is not expected to be complete until September, 2021.

  1. GaN Substrate Technology

    SBC: KYMA TECHNOLOGIES, INC.            Topic: N/A

    Kyma Technologies will develop a cost-effective technique to grow high-quality gallium nitride (GaN) by developing a high growth rate process for creating crystalline GaN boules, which are used as a starting material for semiconductor device manufacturing. Currently, growing boules from GaN seeds is slow, expensive, and inconsistent, which negatively affects manufacturing yield and electronic devi ...

    SBIR Phase II 2014 Department of EnergyARPA-E
  2. Hermetic Seals for Chemical/Biological Protective Garments

    SBC: CREARE LLC            Topic: CBD13109

    Interfaces on existing military chemical/biological protection garments are not designed to fully eliminate macroscopic and microscopic air gaps at folds, fabric surfaces, or hook-and-loop closures, and thus do not provide a hermetic barrier against exposure. Creare proposes to develop a hermetic garment closure system that seals macroscopic and microscopic gaps at interfaces and closures and pro ...

    SBIR Phase II 2014 Department of DefenseOffice for Chemical and Biological Defense
  3. A Miniature Autoinjector for Multicomponent Drugs and Vaccines

    SBC: CREARE LLC            Topic: CBD13106

    Chemical, biological, or toxin attacks in military and civilian settings are a serious and growing concern. Standard first aid for exposure to some chemical warfare agents and toxins includes the immediate administration of relevant antidotes using an autoinjector. When an attack occurs, pre-filled autoinjectors must be immediately available and thus highly portable, and they must be suitable fo ...

    SBIR Phase II 2014 Department of DefenseOffice for Chemical and Biological Defense
  4. Transformational GaN Substrate Technology

    SBC: KYMA TECHNOLOGIES, INC.            Topic: DEFOA0000941

    Kyma Technologies will develop a cost-effective technique to grow high-quality gallium nitride (GaN) by developing a high growth rate process for creating crystalline GaN boules, which are used as a starting material for semiconductor device manufacturing. Currently, growing boules from GaN seeds is slow, expensive, and inconsistent, which negatively affects manufacturing yield and electronic devi ...

    SBIR Phase II 2014 Department of EnergyARPA-E
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