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The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. Advanced Gallium Nitride Microelectronic Devices Produced on Gallium Nitride Substrates

    SBC: KYMA TECHNOLOGIES, INC.            Topic: MDA02047

    Kyma Technologies, Inc. will demonstrate high-performance gallium nitride (GaN) microelectronic devices for X-band radar applications using single crystal semi-insulating GaN substrates. FETs for power amplifiers will benefit from lower defects resulting from growth on a native GaN substrate. The thermal conductivity of the GaN substrates will be characterized and device structures will be modeled ...

    SBIR Phase II 2004 Department of DefenseMissile Defense Agency
  2. Advanced Manufacturing Process for Growth of Gallium Nitride Crystals

    SBC: KYMA TECHNOLOGIES, INC.            Topic: MDA02021b

    Gallium nitride substrates are now being produced by several manufacturers, however significant market penetration is being limited by high prices and low quantities. This Phase II program is aimed at addressing both of these issues by developing a growth process for the production of 1cm thick boules at a growth rate of 1mm per hour. The Phase I program met and exceeded the goals of demonstrati ...

    SBIR Phase II 2004 Department of DefenseMissile Defense Agency
  3. An Enhanced Tropospheric Effects Compensation System Combining Tomographic and GPS Correction Techniques

    SBC: PROPAGATION RESEARCH ASSOCIATES, INC            Topic: BMDO02003

    Propagation Research Associates (PRA) proposes an innovative system that will correct angle-of-arrival error for radars tracking long range, low elevation targets. The correction improvement will be an order of magnitude improvement over existing model based measurements and will extend time-lines for Ballistic Missile Defense radars. The proposed Enhanced Tropospheric Effects Compensation (ETEC) ...

    SBIR Phase II 2004 Department of DefenseMissile Defense Agency
  4. Dermal Medical Countermeasures for Chemical Weapons Exposure

    SBC: ZYMERON CORPORATION            Topic: CBD161003

    The skin is the first line of defense against chemical warfare agents including nerve agents and toxic industrial chemicals, providing a possible barrier or delay to systemic distribution. Some chemicals also can act directly on the skin including the vesicants sulfur mustard and lewisite. Early and rapid skin decontamination is extremely important following exposure to CWAs and TICs because it de ...

    SBIR Phase II 2018 Department of DefenseOffice for Chemical and Biological Defense
  5. Detection of “active” biological toxins by exploiting native binding specificities

    SBC: BINERGY SCIENTIFIC, INC.            Topic: CBD14101

    A chemical threat agent mode of action is often initiated through a selective interaction with a biological molecule or structure. The binding event mimics normal cellular processes, but then overruns natural control mechanisms leading to toxic and lethal effects. The native binding specificity is used to design sensor recognition elements that outperform conventional antibody-based biosensors. Ou ...

    SBIR Phase II 2019 Department of DefenseOffice for Chemical and Biological Defense
  6. Fabrication of GaN Schottky Diode Power Rectifiers on GaN Substrates Using Advanced Metal Contacts

    SBC: KYMA TECHNOLOGIES, INC.            Topic: BMDO02T00

    The Phase II STTR will demonstrate the device operation of a GaN Schottky diode power rectifier. Kyma Technologies, Inc. will collaborate with investigators at Auburn University and North Carolina State University for materials growth/characterization and device fabrication/testing. The fabrication of a conventional Schottky diode relies on heteroepitaxy on lattice- and thermal-mismatched foreig ...

    STTR Phase II 2004 Department of DefenseMissile Defense Agency
  7. Growth of large-area, single-crystalline AlN substrates (Subtopic A: Electronic Materials)

    SBC: HEXATECH            Topic: BMDO02T00

    Teh objective of the proposed work is to develop a process for the fabrication large-area aluminum nitride (AlN) wafers of up to 2" in diameter for III-nitride substrate applications. The growth process is based on a sublimation technique that utilizes adequately prepared SiC wafers as large-area seeds. A multi-step process developed in Phase I will be upscaled to larger area deposition, and will ...

    STTR Phase II 2004 Department of DefenseMissile Defense Agency
  8. Sensitive Molecular Beacons (MB) Based DNA Microarray

    SBC: BIOMACHINES, INC.            Topic: CBD02101

    In the wake of the September 11th attacks and subsequent Anthrax scares, researchers worldwide are working to expand our ability to rapidly assess what poses a terrorism threat to the public. The rapid detection of specific pathogens is required for biod

    SBIR Phase II 2004 Department of DefenseOffice for Chemical and Biological Defense
  9. Techniques for Real-time Hypervelocity Projectile fly-out Generation and Optimization

    SBC: VADUM INC            Topic: MDA18002

    Vadum has demonstrated the Optimal Advanced Hypervelocity Projectile (HVP) Trajectory System (OATHS) which increases the performance of the HVP by optimizing HVP trajectory to its target. OATHS was prototyped and tested using an in-house MATLAB-based combat system development environment. The results of Phase I testing show that OATHS can feasibly increase HVP probability of kill or reduce the tot ...

    SBIR Phase II 2019 Department of DefenseMissile Defense Agency
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