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Award Data
The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.
Download all SBIR.gov award data either with award abstracts (290MB)
or without award abstracts (65MB).
A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.
The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.
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Few-shot Object detection via Reinforcement Control of Image Simulation (FORCIS)
SBC: EXPEDITION TECHNOLOGY, INC. Topic: SCO182006This Phase 2 Enhancement seeks to improve the quality of synthetic data to be representative of real data (using whatever criteria the algorithm deems important for detect, classify, and track of an object of interest at rest and/or in motion) and to maximize algorithm performance such that when the algorithm is introduced to real data with a real object of interest in its real environment, the al ...
SBIR Phase II 2023 Department of DefenseOffice of the Secretary of Defense -
Digital-Output Capacitive Accelerometers for High-G Applications
SBC: INTERDISCIPLINARY CONSULTING CORP Topic: DMEA231001In response to the 2023 DMEA SBIR Phase I solicitation topic DMEA231-001 titled High-G Accelerometers, the Interdisciplinary Consulting Corporation (IC2) proposes to develop a robust, real-time, tri-axis accelerometer using microelectromechanical systems (MEMS) technology that can provide accurate measurements in high-G environments and survive up to 60 kG. MEMS accelerometers have played a cruci ...
SBIR Phase I 2023 Department of DefenseDefense Microelectronics Activity -
High Voltage Encapsulant Material
SBC: LaunchBay LLC Topic: DMEA231003Encapsulation materials are crucial for long-term reliability of high voltage and high temperature power device packaging as they help prevent electrical discharges in air as well as protect the devices against humidity, dirt and shock. However, the currently available commercial encapsulants are severely deficient in their high temperature performance, especially above 250C. Although several diff ...
SBIR Phase I 2023 Department of DefenseDefense Microelectronics Activity -
2nd Phase II Radiation Shielding (SI Technologies)
SBC: SI2 TECHNOLOGIES, INC Topic: MDA17012SI2 Technologies, Inc. (SI2) proposes to develop 3D-printed for spacecraft microelectronics. Leveraging SI2’s extensive additive manufacturing experience, SI2’s low-SWaP, low-cost shielding will be designed to protect both unmounted and board-mounted microelectronics. This approach will accommodate multiple types and sizes of semiconductor packages, including 484 ball Fine Pitch Ball Grid Arra ...
SBIR Phase II 2023 Department of DefenseDefense Microelectronics Activity -
Supply Chain Development of Thick SiC Epi-Wafers and 20 kV Class Transistors
SBC: MAINSTREAM ENGINEERING CORP Topic: DMEA231D02SiC IGBT devices remain restricted from achieving higher voltage operation due the lack of a supply chain (onshore or otherwise) for thick n-channel epitaxial wafers. Some researchers have reported success in improving SiC to accommodate higher voltage IGBTs. However, commercial exploitation of this knowledge has not occurred due to a much larger market for moderate voltage transistors. Detailed f ...
SBIR Phase II 2023 Department of DefenseDefense Microelectronics Activity -
High-G Clock Source
SBC: Esc Aerospace US, Inc Topic: DMEA231002At the center of most operational systems is TIME. Time enables us to communicate, to synchronize, to control, and to position. An accurate, reliable, low size, weight and power timing source is critical to our esc Aerospace PNT solution NavXTM for accurate and reliable PNT in total GPS denial. However, it is equally critical in a vast number of military and commercial applications. Historica ...
SBIR Phase I 2023 Department of DefenseDefense Microelectronics Activity -
High Voltage and Speed SiC MOSFETs through Improved Gate Dielectric Interfaces
SBC: MAINSTREAM ENGINEERING CORP Topic: DMEA221D01Development of high voltage gated semiconductor device process that leverages the enhanced power handling capability of SiC, and remediates the undesirable effects (threshold voltage instability, increased interface capacitance) associated with native SiO2 growth from commercially available 4H-SiC and 6H-SiC polytypes. The process improvement and resultant performance enhancements gained will be v ...
SBIR Phase II 2022 Department of DefenseDefense Microelectronics Activity -
Recycling Fast-Response Atom Interferometer for Navigation (ReFRAIN)
SBC: PHYSICAL SCIENCES INC. Topic: OSD221006Physical Sciences Inc. (PSI) will develop a Recycling Fast-Response Atom Interferometer for Navigation (ReFRAIN) as an atom interferometer (AI) accelerometer specially designed to improve inertial navigation systems (INS) on moving platforms. The ReFRAIN provides sensitivity, dynamic range, bandwidth, and bias stability that matches or exceeds state of the art mechanical accelerometers. PSI in ...
SBIR Phase I 2022 Department of DefenseOffice of the Secretary of Defense -
Machine Learning Applied to Counterfeit Detection
SBC: GRAF RESEARCH CORPORATION Topic: DMEA192002The machine learning for counterfeit detection research program continues the successful Phase 1 feasibility study of applying machine learning to detect FPGA counterfeits. In Phase 1, Graf Research demonstrated the feasibility of implementing a machine learning based counterfeit detection platform for a single FPGA device and representing data characteristic of repackaged counterfeit devices. T ...
SBIR Phase II 2021 Department of DefenseDefense Microelectronics Activity -
4H-SiC BiCMOS Development on 6â wafers in a High-Volume Production Foundry
SBC: GENESIC SEMICONDUCTOR INC. Topic: DMEA211001GeneSiC Semiconductor is leveraging recently reported novel techniques for high-performance 4H-silicon carbide MOSFETs, deep in-house expertise in SiC device design and robust device manufacturing facilities at automotive-qualified production foundry X-Fab Texas, for the development of a comprehensive 4H-SiC BiCMOS process platform in this DMEA SBIR program for mission-critical DoD applications an ...
SBIR Phase I 2021 Department of DefenseDefense Microelectronics Activity