Award Data

The use and applications of radiological sources, for power, medical, and defense applications, continuously increases with time. Illicit nuclear materials represent a threat for the safety of the American citizens and the detection and interdiction of a nuclear weapon is a national problem that has not been yet solved. This represents an enormous challenge to current detection methods and monitor ...

THE SIGNAL-TO-NOISE RATIO OF INFRARED DETECTORS INCREASES DRAMATICALLYAS THE TEMPERATURE OF THE DETECTOR IS REDUCED TO CRYOGENIC TEMPERATURES AND THERE HAS BEEN A SUBSTANTIAL IMPROVEMENT IN CRYOCOOLERS TO MEET THIS NEED. HOWEVER, VALVES OF ONE TYPE OF CRYOCOOLER, THE JOULE-THOMPSON EXPANSION CRYOCOOLER, ARE PRONE TO PLUGGING BY THE FREEZING OF IMPURITIES IN THE HIGH-PRESSURE STREAM. TO ADDRESS THI ...

RECHARGEABLE POWER SOURCES POSSESSING HIGH ENERGY DENSITIES, BRIEF BUTREPETITIVE HIGH CURRENT OUTPUTS, AND THOUSANDS OF DUTY CYCLES ARE REQUIRED FOR STRATEGIC DEFENSE SYSTEMS. TO ADDRESS THESE NEEDS, HIGH SURFACE AREA, THIN FILM CATHODES ARE BEING FABRICATED FOR AMBIENT TEMPERATURE LITHIUM BATTERIES. THESE CATHODES FEATURE AN ARRAY OF APPROXIMATELY L MICROMETER MICROCRYSTALLITE TIS2 PLATES ORIENTE ...

A PROGRAM TO DEVELOP ELECTROCHROMIC DEVICES CAPABLE OF FAST TRANSMISSIVE TO REFLECTIVE OPTICAL SWITCHING IS PROPOSED. THESE DEVICES WOULD BE USED FOR OPTICAL HARDENING IN THE WAVELENGTH RANGE FROM 0.615 MICROMWTERS. OPTICAL SWITCHING ELEMENTS BASED ON SINGLE CRYSTAL LAYERS OR EPITAXIAL FILMS OF THE METAL DICHALOCOGENIDES ZRS(2) AND HF(2) WOULD BE DEVELOPED. WE PROPOSE TO INTERCALATE SINGLE CRYSTAL ...

RESEARCH IS DIRECTED AT TECHNIQUES TO IMPROVE SURFACE MORPHOLOGY IN SILICON ON INSULATOR (SOI) WAFERS PREPARED BY ZONE MELTING RECRYSTALLIZATION (ZMR). THE THREE AREAS OF PRIMARY IMPORTANCE IN IMPROVING THE SURFACE MORPHOLOGY OF ZMR PROCESSED WAFERS ARE: SLIP, BOW AND WARP, AND SURFACE SMOOTHNESS. SLIP IS CAUSED BY THERMALLY INDUCED STRESS THAT RESULTS FROM THE TEMPERATURE GRADIENT IN THE MELT ZON ...

A PRODUCTION ORGANOMETALLIC CHEMICAL VAPOR DEPOSITION REACTOR IS BEINGDESIGNED CAPABLE OF DEPOSITING UNIFORM AND ABRUPT LAYERS OF GAAS AND ALGAAS FOR THE NEXT GENERATION OF HETEROSTRUCTURE DEVICES. THESE INCLUDE HIGH ELECTRON MOBILITY STRUCTURES FOR BOTH DIGITAL AND MONOLITHIC MICROWAVE INTEGRATED CIRCUITS, AS WELL AS QUANTUM WELL STRUCTURES FOR OPTICAL COMMUNICATION. THIS DESIGN IS ANTICIPATED TO ...

NOVA Scientific proposes Phase II development of a solid-state, high-efficiency neutron detection alternative to 3He gas tubes employing neutron-sensitive microchannel plates (MCPs) containing 10B and/or Gd. This program supports the DNDO development of technologies designed to detect and interdict nuclear weapons or illicit nuclear materials. This solid-state neutron detector would permit operati ...

OPTICAL COMPUTERS ARE RECOGNIZED AS POTENTIALLY USEFUL ELEMENTS IN THE QUEST TO MEET THE INTENSE BATTLE MANAGEMENT COMPUTATIONAL REQUIREMENTS OF THE SDI PROGRAM. CURRENTLY, OPTICAL COMPUTERS ARE GREATLY LIMITED IN PERFORMANCE BECAUSE NO EXISTING NONLINEAR LIGHT MODULATION DEVICE SIMULTANEOUSLY OFFERS FAST OPTICAL SWITCHING WITH HIGH GAMMA (THRESHOLD), HIGH SPATIAL BANDWIDTH, LOW POWER DISSIPATION, ...

OPTICAL COMPUTERS ARE RECOGNIZED AS POTENTIALLY USEFUL ELEMENTS IN THEQUEST TO MEET THE INTENSE BATTLE MANAGEMENT COMPUTATIONAL REQUIREMENTSOF STRATEGIC DEFENSE. CURRENTLY, OPTICAL COMPUTERS ARE GREATLY LIMITED IN PERFORMANCE BECAUSE NO EXISTING NONLINEAR LIGHT MODULATION DEVICE SIMULTANEOUSLY OFFERS FAST OPTICAL SWITCHING WITH THRESHOLD HIGH GAMMA, HIGH SPATIAL BANDWIDTH, LOW POWER DISSIPATION, O ...

A PROCESS IS BEING DEVELOPED FOR THE HETEROEPITAXIAL GROWTH OF INP ON SILICON SUBSTRATES BY METALORGANIC CHEMICAL VAPOR DEPOSITION. DUE TO ITS ELECTRON SATURATED DRIFT VELOCITY AND RADIATION RESISTANCE, INP ISAN EXCELLENT MATERIAL FOR USE IN HIGH SPEED ELECTRON DEVICES AND SPACEAPPLICATIONS. SILICON IS AN OPTIMAL SUBSTRATE MATERIAL DUE TO THE AVAILABILITY OF HIGH PURITY, LARGE AREA, LOW COST WAFER ...