Award Data

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The Award database is continually updated throughout the year. As a result, data for FY19 is not expected to be complete until June, 2020.

  1. A Tunable Interferometric Random Optical Cross-Switch

    SBC: Scientific Solutions, Inc.            Topic: N/A

    A random access, solid-state, optical cross-switch capable of 770 channel discrimination in the telecommunications C-band is designed and proven as an alternative to current thin-film WDM devices and as a mechanically robust alternative tomicroelectromechanical (MEMS) WDM devices. The device may be used in multiplexing (mux), demultiplexing (demux), or complete cross-switch configurations, and is ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  2. Adaptive Daylighting Control System

    SBC: Orion Engineering Company            Topic: N/A

    N/A

    STTR Phase I 1999 Department of Energy
  3. Advanced Accelerator Design to Enhance Boron-Neutron-Capture Therapy

    SBC: Science Research Laboratory, Inc            Topic: N/A

    Recent clinical trials have cast doubt on the efficacy of Boron Neutron Capture Therapy (BNCT) for brain tumor treatment when low energy, reactor-generated neutron beams are used. It has been predicted that higher energy, accelerator-produced neutron beams would have an epithermal neutron spectrum that would be much more effective. Therefore, this project will design and fabricate an innovative ...

    STTR Phase II 2001 Department of Energy
  4. Bottoms-Up In-Situ Vitrification of Hard-to-Treat Buried Mixed Wastes

    SBC: RESODYN CORPORATION            Topic: N/A

    N/A

    STTR Phase I 1999 Department of Energy
  5. Development of a Truly Lattice-Matched III-Nitride Technology for

    SBC: CERMET, INC.            Topic: N/A

    Cermet, in collaboration with researchers at Georgia Institute of Technology, proposes to implement a lattice matched III-Nitride technology using existing substrates. The implementation of a lattice matched substrate promises to produce near dislocationfree III-Nitrides for the first time while the use of an existing substrate technology dramatically lowers development cost and reduces the devel ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  6. High Power, Modulation Doped AlGaN/GaN FETs on Melt Grown, Zinc Oxide Bulk Substrates

    SBC: CERMET, INC.            Topic: N/A

    N/A

    STTR Phase I 1999 Department of DefenseMissile Defense Agency
  7. Improved Sampling Probe for Ammonia Measurement

    SBC: Physical Sciences Inc.            Topic: N/A

    N/A

    STTR Phase I 1999 Department of Energy
  8. Improved SiC Materials for High Power Electronics

    SBC: PHOENIX INNOVATION, INC.            Topic: N/A

    Silicon has long been the semiconductor of choice for high-voltage power electronic applications. Recently, SiC has attracted attention because SiC is projected to have better performance than silicon. [1] SiC power switching devices have yet to becommercialized, largely due to SiC crystal defects, most notably the device-killing micropipe defect, which does not permit high total current parts t ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  9. In-Line Trona Fiber-Optic Raman System

    SBC: Detection Limit, Inc.            Topic: N/A

    N/A

    STTR Phase I 1999 Department of Energy
  10. N/A

    SBC: Electron Power Systems, Inc.            Topic: N/A

    N/A

    STTR Phase I 1999 Department of DefenseMissile Defense Agency
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