Award Data

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The Award database is continually updated throughout the year. As a result, data for FY19 is not expected to be complete until June, 2020.

  1. Advanced Tracking Techniques for FOPEN GMTI Radars

    SBC: ALPHATECH, INC.            Topic: N/A

    The utility of continuously tracking vehicles in a battlefield has been demonstrated during the Gulf War and other recent conflicts. However, the ability to achieve reliable continuous tracking in many environments will require the use of FOPEN radar andefficient use of sensor resources. In this effort we extend current research to include heterogeneous terrain and apply this model to simulations. ...

    STTR Phase I 2001 Department of DefenseDefense Advanced Research Projects Agency
  2. Advanced Tracking Techniques for FOPEN GMTI Radars

    SBC: ALPHATECH, INC.            Topic: N/A

    The utility of continuously tracking vehicles in a battlefield has been demonstrated during the Gulf War and other recent conflicts. However, the ability to achieve reliable continuous tracking in many environments will require the use of FOPEN radar andefficient use of sensor resources. In this effort we extend current research to include heterogeneous terrain and apply this model to simulations. ...

    STTR Phase II 2001 Department of DefenseDefense Advanced Research Projects Agency
  3. ACHIEVING COMMERICALLY-VIABLE ROBUST VIDEO-BASED UNSTRUCTURED SCENE UNDERSTANDING SYSTEMS

    SBC: ALPHATECH, INC.            Topic: N/A

    Today's commercial video surveillance and monitoring (VSAM) systems are capable of producing enormous video streams that are over-whelming for human operators to review. But with automated intelligent interpretation of the imagery we can track and classifymoving objects of interest, collect spatial and temporal motion statistics, and detect anomalous behaviors. We propose to transition image under ...

    STTR Phase II 2001 Department of DefenseDefense Advanced Research Projects Agency
  4. Development of a Truly Lattice-Matched III-Nitride Technology for

    SBC: CERMET, INC.            Topic: N/A

    Cermet, in collaboration with researchers at Georgia Institute of Technology, proposes to implement a lattice matched III-Nitride technology using existing substrates. The implementation of a lattice matched substrate promises to produce near dislocationfree III-Nitrides for the first time while the use of an existing substrate technology dramatically lowers development cost and reduces the devel ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  5. Improved SiC Materials for High Power Electronics

    SBC: PHOENIX INNOVATION, INC.            Topic: N/A

    Silicon has long been the semiconductor of choice for high-voltage power electronic applications. Recently, SiC has attracted attention because SiC is projected to have better performance than silicon. [1] SiC power switching devices have yet to becommercialized, largely due to SiC crystal defects, most notably the device-killing micropipe defect, which does not permit high total current parts t ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  6. A Tunable Interferometric Random Optical Cross-Switch

    SBC: Scientific Solutions, Inc.            Topic: N/A

    A random access, solid-state, optical cross-switch capable of 770 channel discrimination in the telecommunications C-band is designed and proven as an alternative to current thin-film WDM devices and as a mechanically robust alternative tomicroelectromechanical (MEMS) WDM devices. The device may be used in multiplexing (mux), demultiplexing (demux), or complete cross-switch configurations, and is ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  7. Novel heterojunction diodes for High Power Electronics

    SBC: VIATRONIX            Topic: N/A

    The wide-bandgap semiconductors GaN and SiC hold great promise for high temperature and highpower electronic devices. This is due to the attractive properties these materials possess, such as wide energy bandgaps, high breakdown fields, high thermalconductivities, and high saturated electron velocities. In addition, GaN and SiC have adequate electron mobilities and can readily be doped n and p ty ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  8. Advanced Accelerator Design to Enhance Boron-Neutron-Capture Therapy

    SBC: Science Research Laboratory, Inc            Topic: N/A

    Recent clinical trials have cast doubt on the efficacy of Boron Neutron Capture Therapy (BNCT) for brain tumor treatment when low energy, reactor-generated neutron beams are used. It has been predicted that higher energy, accelerator-produced neutron beams would have an epithermal neutron spectrum that would be much more effective. Therefore, this project will design and fabricate an innovative ...

    STTR Phase II 2001 Department of Energy
  9. Video Detection, Tracking and Classification of Vehicles, Humans and Animals in Outdoor Environments

    SBC: ALPHATECH, INC.            Topic: N/A

    N/A

    STTR Phase I 1999 Department of DefenseDefense Advanced Research Projects Agency
  10. High Power, Modulation Doped AlGaN/GaN FETs on Melt Grown, Zinc Oxide Bulk Substrates

    SBC: CERMET, INC.            Topic: N/A

    N/A

    STTR Phase I 1999 Department of DefenseMissile Defense Agency
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