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The Award database is continually updated throughout the year. As a result, data for FY23 is not expected to be complete until September, 2024.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. Innovative Processing Methods for Superconducting Materials

    SBC: Alabama Cryogenic Engineering, Inc.            Topic: N/A

    Precursor materials for superconductors such as Nb3Sn and Nb3Al include low melting point components. Therefore, conventional extrusion processes with large area reductions are not possible because adiabatic heating raises the temperature above the melting point. In certain circumstances, hydrostatic extrusion could be used, as it can be operated at low enough speeds to allow the deformation hea ...

    STTR Phase I 2001 Department of Energy
  2. Development of a Truly Lattice-Matched III-Nitride Technology for

    SBC: CERMET, INC.            Topic: N/A

    Cermet, in collaboration with researchers at Georgia Institute of Technology, proposes to implement a lattice matched III-Nitride technology using existing substrates. The implementation of a lattice matched substrate promises to produce near dislocationfree III-Nitrides for the first time while the use of an existing substrate technology dramatically lowers development cost and reduces the devel ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  3. Improved SiC Materials for High Power Electronics

    SBC: PHOENIX INNOVATION, INC.            Topic: N/A

    Silicon has long been the semiconductor of choice for high-voltage power electronic applications. Recently, SiC has attracted attention because SiC is projected to have better performance than silicon. [1] SiC power switching devices have yet to becommercialized, largely due to SiC crystal defects, most notably the device-killing micropipe defect, which does not permit high total current parts t ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  4. Advanced Accelerator Design to Enhance Boron-Neutron-Capture Therapy

    SBC: Science Research Laboratory, Inc            Topic: N/A

    Recent clinical trials have cast doubt on the efficacy of Boron Neutron Capture Therapy (BNCT) for brain tumor treatment when low energy, reactor-generated neutron beams are used. It has been predicted that higher energy, accelerator-produced neutron beams would have an epithermal neutron spectrum that would be much more effective. Therefore, this project will design and fabricate an innovative ...

    STTR Phase II 2001 Department of Energy
  5. ADVANCED DIRECT METHANOL FUEL CELLS WITH ELECTRON BEAM-PROCESSED POLYPHOSPHAZENEMEMBRANES

    SBC: Science Research Laboratory, Inc            Topic: N/A

    Polymer electrolyte membrane (PEM) fuel cells are candidates to fill the Army's need for high-energy lightweight power sources. Methanol is a more convenient fuel source than gaseous hydrogen, but requires advanced membrane materials and alternativeprocessing. SRL with partners Tulane University and Northeastern University has demonstrated Electron-Beam-crosslinked polyphosphazene membranes with ...

    STTR Phase II 2001 Department of DefenseArmy
  6. ADVANCED DIRECT METHANOL FUEL CELLS WITH ELECTRON BEAM-PROCESSED POLYPHOSPHAZENEMEMBRANES

    SBC: Science Research Laboratory, Inc            Topic: N/A

    Polymer electrolyte membrane (PEM) fuel cells are candidates to fill the Army's need for high-energy lightweight power sources. Methanol is a more convenient fuel source than gaseous hydrogen, but requires advanced membrane materials and alternativeprocessing. SRL with partners Tulane University and Northeastern University has demonstrated Electron-Beam-crosslinked polyphosphazene membranes with ...

    STTR Phase I 2001 Department of DefenseArmy
  7. A Tunable Interferometric Random Optical Cross-Switch

    SBC: Scientific Solutions, Inc.            Topic: N/A

    A random access, solid-state, optical cross-switch capable of 770 channel discrimination in the telecommunications C-band is designed and proven as an alternative to current thin-film WDM devices and as a mechanically robust alternative tomicroelectromechanical (MEMS) WDM devices. The device may be used in multiplexing (mux), demultiplexing (demux), or complete cross-switch configurations, and is ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  8. Remote Sensing and Directed Energy Applications of Femtosecond, Terawatt Lasers.

    SBC: TIME DOMAIN CORP.            Topic: N/A

    TDC/UDRI will undertake development of a physics based model for the propagation of terawatt, femtosecond laser pulses through the atmosphere. Previous experiments and theoretical results have made it clear that a new approach must be taken in order tohave an unambiguous understanding of this high power ultrashort laser pulse propagation problem in the atmosphere. Simple extensions of the nonline ...

    STTR Phase I 2001 Department of DefenseArmy
  9. Bioengineered Proteins for Chemical/Biological Defense, Protection, and Decontamination

    SBC: Transwesttech            Topic: N/A

    This proposal encompasses a facile method for generating transgenic chickens. Traditionally, the approach to accomplish this has been to target the avian egg or embryo for gene insertion using either viral or 'standard' plasmids as vectors. In contrast,our proposed method introduces two new features, i.e. (1) novel transposon DNA vectors and (2) injection of DNA into the testes of immature males. ...

    STTR Phase I 2001 Department of DefenseArmy
  10. Novel heterojunction diodes for High Power Electronics

    SBC: PHOTRONIX            Topic: N/A

    The wide-bandgap semiconductors GaN and SiC hold great promise for high temperature and highpower electronic devices. This is due to the attractive properties these materials possess, such as wide energy bandgaps, high breakdown fields, high thermalconductivities, and high saturated electron velocities. In addition, GaN and SiC have adequate electron mobilities and can readily be doped n and p ty ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
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