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Award Data

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The Award database is continually updated throughout the year. As a result, data for FY20 is not expected to be complete until September, 2021.

  1. Development of a Truly Lattice-Matched III-Nitride Technology for

    SBC: CERMET, INC.            Topic: N/A

    Cermet, in collaboration with researchers at Georgia Institute of Technology, proposes to implement a lattice matched III-Nitride technology using existing substrates. The implementation of a lattice matched substrate promises to produce near dislocationfree III-Nitrides for the first time while the use of an existing substrate technology dramatically lowers development cost and reduces the devel ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  2. Improved SiC Materials for High Power Electronics

    SBC: PHOENIX INNOVATION, INC.            Topic: N/A

    Silicon has long been the semiconductor of choice for high-voltage power electronic applications. Recently, SiC has attracted attention because SiC is projected to have better performance than silicon. [1] SiC power switching devices have yet to becommercialized, largely due to SiC crystal defects, most notably the device-killing micropipe defect, which does not permit high total current parts t ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  3. A Tunable Interferometric Random Optical Cross-Switch

    SBC: Scientific Solutions, Inc.            Topic: N/A

    A random access, solid-state, optical cross-switch capable of 770 channel discrimination in the telecommunications C-band is designed and proven as an alternative to current thin-film WDM devices and as a mechanically robust alternative tomicroelectromechanical (MEMS) WDM devices. The device may be used in multiplexing (mux), demultiplexing (demux), or complete cross-switch configurations, and is ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  4. Novel heterojunction diodes for High Power Electronics

    SBC: VIATRONIX            Topic: N/A

    The wide-bandgap semiconductors GaN and SiC hold great promise for high temperature and highpower electronic devices. This is due to the attractive properties these materials possess, such as wide energy bandgaps, high breakdown fields, high thermalconductivities, and high saturated electron velocities. In addition, GaN and SiC have adequate electron mobilities and can readily be doped n and p ty ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  5. Conversion of Animal Waste to Hydrogen by Unmixed Reforming

    SBC: EERGC CORP.            Topic: N/A

    Animal waste is a potentially valuable energy resource, but it cannot be shipped economically. If the waste could be converted to hydrogen, the hydrogen could be used in fuel cells to provide electricity and space heating to farms and other rural facilities. Unfortunately, the only presently available technology for doing this conversion, steam reforming, is not economical for small installatio ...

    STTR Phase I 2001 Department of Energy
  6. Conversion of Wet Biomass to Hydrogen by Unmixed Reforming

    SBC: EERGC CORP.            Topic: N/A

    Wet biomass is a potentially valuable energy resource but it cannot be shipped economically. If wet biomass could be converted to hydrogen, the hydrogen could be used in fuel cells to provide electricity and space heating to farms and other rural facilities. However, the only presently available technology for this conversion, steam reforming, is not economical for small installations. This pro ...

    STTR Phase II 2001 Department of Energy
  7. Microfluidics Transport and Path Control via Programmable Electrowetting on Dielectric (EWOD) Card

    SBC: Intelligent Optical Systems, Inc.            Topic: N/A

    The development of microfluidics devices for use in micro-fabricated chemical sensors would improve the capability for detecting weapons of mass destruction. Although a myriad of microfluidics transport devices have been demonstrated, full commercialization has not yet been realized due to an absence of design standards that would enable variable interconnects and flow paths. In addition, these ...

    STTR Phase I 2001 Department of Energy
  8. Phased array antenna for air platforms

    SBC: RST SCIENTIFIC RESEARCH INC            Topic: N/A

    This proposal describes the technical approach to a small size, multi-functional, multi-frequency phased array antenna, which would operate at multi-band frequency ranges without the need for switching or reconfiguration. The phased array antenna designwill cover X, Ku, K and Ka-band frequency ranges and will be capable of high volume data transfer in a timely manner between the users. The RF ante ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  9. Advanced Accelerator Design to Enhance Boron-Neutron-Capture Therapy

    SBC: Science Research Laboratory, Inc            Topic: N/A

    Recent clinical trials have cast doubt on the efficacy of Boron Neutron Capture Therapy (BNCT) for brain tumor treatment when low energy, reactor-generated neutron beams are used. It has been predicted that higher energy, accelerator-produced neutron beams would have an epithermal neutron spectrum that would be much more effective. Therefore, this project will design and fabricate an innovative ...

    STTR Phase II 2001 Department of Energy
  10. High Power, Modulation Doped AlGaN/GaN FETs on Melt Grown, Zinc Oxide Bulk Substrates

    SBC: CERMET, INC.            Topic: N/A

    N/A

    STTR Phase I 1999 Department of DefenseMissile Defense Agency
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