Award Data

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The Award database is continually updated throughout the year. As a result, data for FY19 is not expected to be complete until June, 2020.

  1. Development of a Truly Lattice-Matched III-Nitride Technology for

    SBC: CERMET, INC.            Topic: N/A

    Cermet, in collaboration with researchers at Georgia Institute of Technology, proposes to implement a lattice matched III-Nitride technology using existing substrates. The implementation of a lattice matched substrate promises to produce near dislocationfree III-Nitrides for the first time while the use of an existing substrate technology dramatically lowers development cost and reduces the devel ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  2. Improved SiC Materials for High Power Electronics

    SBC: PHOENIX INNOVATION, INC.            Topic: N/A

    Silicon has long been the semiconductor of choice for high-voltage power electronic applications. Recently, SiC has attracted attention because SiC is projected to have better performance than silicon. [1] SiC power switching devices have yet to becommercialized, largely due to SiC crystal defects, most notably the device-killing micropipe defect, which does not permit high total current parts t ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  3. TeraHertz High-Reliability InP DHBT Technology for Millimeter-Wave Amplifiers and Ultra-High Speed Digital ICs

    SBC: RJM Semiconductor, L.L.C.            Topic: N/A

    RJM Semiconductor and NASA JPL propose to demonstrate the world's fastest InP transistor technology with cut-off frequencies approaching 1TeraHertz combined with the essential device reliability required for real systems deployment. The approach will adopta new patent-pending Self-Aligned HBT Process invented at RJM Semiconductor that employs stable, non-diffusing Carbon-doped bases, high breakdow ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  4. A Tunable Interferometric Random Optical Cross-Switch

    SBC: Scientific Solutions, Inc.            Topic: N/A

    A random access, solid-state, optical cross-switch capable of 770 channel discrimination in the telecommunications C-band is designed and proven as an alternative to current thin-film WDM devices and as a mechanically robust alternative tomicroelectromechanical (MEMS) WDM devices. The device may be used in multiplexing (mux), demultiplexing (demux), or complete cross-switch configurations, and is ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  5. Novel heterojunction diodes for High Power Electronics

    SBC: VIATRONIX            Topic: N/A

    The wide-bandgap semiconductors GaN and SiC hold great promise for high temperature and highpower electronic devices. This is due to the attractive properties these materials possess, such as wide energy bandgaps, high breakdown fields, high thermalconductivities, and high saturated electron velocities. In addition, GaN and SiC have adequate electron mobilities and can readily be doped n and p ty ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  6. CO2 Removal from Natural Gas

    SBC: Carbozyme, Inc.            Topic: N/A

    This project will develop an enzyme-catalyzed, contained liquid membrane reactor for removal of CO2 from natural gas. The membrane will be capable of achieving both high flux and high separation factor while reducing fouling. This is a specific example of the enrichment of a dilute gas stream. Ultimately, a biomimetically derived membrane will be capable of selectively removing CO2 from mixed g ...

    STTR Phase I 2001 Department of Energy
  7. Oxide Dispersed Nanofluids for Next Generation Heat Transfer Fluids

    SBC: NEI CORPORATION            Topic: N/A

    Nanoparticle-dispersed engine coolants would have excellent heat transfer properties due in part to the much higher thermal conductivity of solids relative to liquids. Micron size particles cannot be used for this application because of problems associated with reduced solid-liquid interfacial area, wear and erosion, and sedimentation. Research at the Argonne National Laboratory has demonstrated ...

    STTR Phase I 2001 Department of Energy
  8. Advanced Accelerator Design to Enhance Boron-Neutron-Capture Therapy

    SBC: Science Research Laboratory, Inc            Topic: N/A

    Recent clinical trials have cast doubt on the efficacy of Boron Neutron Capture Therapy (BNCT) for brain tumor treatment when low energy, reactor-generated neutron beams are used. It has been predicted that higher energy, accelerator-produced neutron beams would have an epithermal neutron spectrum that would be much more effective. Therefore, this project will design and fabricate an innovative ...

    STTR Phase II 2001 Department of Energy
  9. High Power, Modulation Doped AlGaN/GaN FETs on Melt Grown, Zinc Oxide Bulk Substrates

    SBC: CERMET, INC.            Topic: N/A

    N/A

    STTR Phase I 1999 Department of DefenseMissile Defense Agency
  10. N/A

    SBC: Electron Power Systems, Inc.            Topic: N/A

    N/A

    STTR Phase I 1999 Department of DefenseMissile Defense Agency
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