Award Data

For best search results, use the search terms first and then apply the filters
Reset

The Award database is continually updated throughout the year. As a result, data for FY19 is not expected to be complete until June, 2020.

  1. Development of a Truly Lattice-Matched III-Nitride Technology for

    SBC: CERMET, INC.            Topic: N/A

    Cermet, in collaboration with researchers at Georgia Institute of Technology, proposes to implement a lattice matched III-Nitride technology using existing substrates. The implementation of a lattice matched substrate promises to produce near dislocationfree III-Nitrides for the first time while the use of an existing substrate technology dramatically lowers development cost and reduces the devel ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  2. Better GaN substrates through HVPE on bulk AlN substrates

    SBC: Crystal IS, Inc.            Topic: N/A

    Single-crystal aluminum nitride substrates will be used for epitaxial growth of GaN by hydride vapor phase epitaxy (HVPE). The relatively close match in crystal structure, in chemical compatibility, and in thermal expansion should allow much high quality(and much thicker) GaN layers to be grown. HVPE will allow these GaN epitaxial layers to grown cost effectively.Extremely high power microwave ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  3. Narrow-linewidth, Sol-Gel Glass/Photopolymer Holographic Filter Technology

    SBC: HYBRID TECHNOLOGIES            Topic: N/A

    Hybrid Technologies (HT, Amherst, NY) in cooperation with the Institute for Lasers, Photonics and Biophotonics (ILPB) at the State University of New York at Buffalo proposes to develop new bulk glass-photopolymer materials and investigate the feasibilityof using them for high efficiency, permanent, highly wavelength selective holographic gratings needed for Dense Wavelength Division Multiplexing ( ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  4. Improved SiC Materials for High Power Electronics

    SBC: PHOENIX INNOVATION, INC.            Topic: N/A

    Silicon has long been the semiconductor of choice for high-voltage power electronic applications. Recently, SiC has attracted attention because SiC is projected to have better performance than silicon. [1] SiC power switching devices have yet to becommercialized, largely due to SiC crystal defects, most notably the device-killing micropipe defect, which does not permit high total current parts t ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  5. A Tunable Interferometric Random Optical Cross-Switch

    SBC: Scientific Solutions, Inc.            Topic: N/A

    A random access, solid-state, optical cross-switch capable of 770 channel discrimination in the telecommunications C-band is designed and proven as an alternative to current thin-film WDM devices and as a mechanically robust alternative tomicroelectromechanical (MEMS) WDM devices. The device may be used in multiplexing (mux), demultiplexing (demux), or complete cross-switch configurations, and is ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  6. Novel heterojunction diodes for High Power Electronics

    SBC: VIATRONIX            Topic: N/A

    The wide-bandgap semiconductors GaN and SiC hold great promise for high temperature and highpower electronic devices. This is due to the attractive properties these materials possess, such as wide energy bandgaps, high breakdown fields, high thermalconductivities, and high saturated electron velocities. In addition, GaN and SiC have adequate electron mobilities and can readily be doped n and p ty ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  7. Integrated Remanufacturing/Materials Recovery Process for Optimum Recycling of Plastics

    SBC: Product Remanufacturing Centers Inc            Topic: N/A

    In the remanufacturing industry (for example the remanufacture of floor care products such as vacuum cleaners) the integration of cost-effective materials recovery technology would provide for the optimum recycling of plastics. Presently, reject plastic parts that cannot be re-used in remanufactured products are disposed. This project will demonstrate the commercial viability of an integrated re ...

    STTR Phase I 2001 Department of Energy
  8. Advanced Accelerator Design to Enhance Boron-Neutron-Capture Therapy

    SBC: Science Research Laboratory, Inc            Topic: N/A

    Recent clinical trials have cast doubt on the efficacy of Boron Neutron Capture Therapy (BNCT) for brain tumor treatment when low energy, reactor-generated neutron beams are used. It has been predicted that higher energy, accelerator-produced neutron beams would have an epithermal neutron spectrum that would be much more effective. Therefore, this project will design and fabricate an innovative ...

    STTR Phase II 2001 Department of Energy
  9. High Power, Modulation Doped AlGaN/GaN FETs on Melt Grown, Zinc Oxide Bulk Substrates

    SBC: CERMET, INC.            Topic: N/A

    N/A

    STTR Phase I 1999 Department of DefenseMissile Defense Agency
  10. N/A

    SBC: Electron Power Systems, Inc.            Topic: N/A

    N/A

    STTR Phase I 1999 Department of DefenseMissile Defense Agency
US Flag An Official Website of the United States Government