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Award Data

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The Award database is continually updated throughout the year. As a result, data for FY20 is not expected to be complete until September, 2021.

  1. Development of a Truly Lattice-Matched III-Nitride Technology for

    SBC: CERMET, INC.            Topic: N/A

    Cermet, in collaboration with researchers at Georgia Institute of Technology, proposes to implement a lattice matched III-Nitride technology using existing substrates. The implementation of a lattice matched substrate promises to produce near dislocationfree III-Nitrides for the first time while the use of an existing substrate technology dramatically lowers development cost and reduces the devel ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  2. Development of a Miniature Dielectric Traveling-Wave Tube

    SBC: MICROWAVE TECHNOLGIES, INC.            Topic: N/A

    This project will involve the development of a novel miniature dielectric traveling-wave tube (DTWT) that will provide short-wavelength radiation for numerous civilian and military applications. The MWS is based on the interaction of an electron beam withthe electromagnetic fields of a traveling wave inside a very compact dielectric waveguide. Our initial studies show the DTWT will offer order ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  3. Compact Radio-Frequency Electron Gun

    SBC: MICROWAVE TECHNOLGIES, INC.            Topic: N/A

    Microwave Technologies is proposing the development of a novel radio-frequency electron gun (CRFG) for applications such as high-power, high-frequency radiation sources for BMDO sensors and directed energy. The CRFG employs a radio-frequency (RF) electricfield produced inside a compact microwave resonator to extract short high-current electron bunches from a novel silicon cathode. The cathode un ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  4. Improved SiC Materials for High Power Electronics

    SBC: PHOENIX INNOVATION, INC.            Topic: N/A

    Silicon has long been the semiconductor of choice for high-voltage power electronic applications. Recently, SiC has attracted attention because SiC is projected to have better performance than silicon. [1] SiC power switching devices have yet to becommercialized, largely due to SiC crystal defects, most notably the device-killing micropipe defect, which does not permit high total current parts t ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  5. A Tunable Interferometric Random Optical Cross-Switch

    SBC: Scientific Solutions, Inc.            Topic: N/A

    A random access, solid-state, optical cross-switch capable of 770 channel discrimination in the telecommunications C-band is designed and proven as an alternative to current thin-film WDM devices and as a mechanically robust alternative tomicroelectromechanical (MEMS) WDM devices. The device may be used in multiplexing (mux), demultiplexing (demux), or complete cross-switch configurations, and is ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  6. Wide Bandgap Heterojunction Bipolar Transistors for X-Band Operation

    SBC: INTRINSIC SEMICONDUCTOR CORP.            Topic: N/A

    The objective is to develop GaN/4H-SiC HBTs which were demonstrated for the first time in Phase I. These novel HBTs will developed for microwave applications. More specifically, the performance goal is a GaN/SiC heterojunction bipolar transistor (HBT) withan exceptionally high power density of 10 W/mm (of emitter stripe width and transit frequency much greater than 20 GHz for amplifiers in satelli ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  7. Wide Bandgap Heterojunction Bipolar Transistors for X-Band Operation

    SBC: INTRINSIC SEMICONDUCTOR CORP.            Topic: N/A

    The objective is to develop GaN/4H-SiC HBTs which were demonstrated for the first time in Phase I. These novel HBTs will developed for microwave applications. More specifically, the performance goal is a GaN/SiC heterojunction bipolar transistor (HBT) withan exceptionally high power density of 10 W/mm (of emitter stripe width and transit frequency much greater than 20 GHz for amplifiers in satelli ...

    STTR Phase II 2001 Department of DefenseMissile Defense Agency
  8. Novel heterojunction diodes for High Power Electronics

    SBC: VIATRONIX            Topic: N/A

    The wide-bandgap semiconductors GaN and SiC hold great promise for high temperature and highpower electronic devices. This is due to the attractive properties these materials possess, such as wide energy bandgaps, high breakdown fields, high thermalconductivities, and high saturated electron velocities. In addition, GaN and SiC have adequate electron mobilities and can readily be doped n and p ty ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  9. Novel, Reliable, and Cost-Effective Input Coupler for High RF Power Applications

    SBC: Amac International, Inc.            Topic: N/A

    Input couplers capable of carrying high RF power to superconducting accelerating cavities, such as those used in nuclear physics research, are not only expensive but also difficult to process and condition up to their extremely high operating power and field gradient. Particular problems include: (1) secondary electron multipacting, which limits coupler performance; and (2) the need for metal sur ...

    STTR Phase II 2001 Department of Energy
  10. Monitoring Phytoremediation Process Using the Green Fluorescent Protein

    SBC: Edenspace Systems Corporation            Topic: N/A

    The removal of pollutant metal ions from water using phytoremediation must be monitored to determine the effectiveness of the process. In particular, a rapid, low cost, in situ method for monitoring metal concentrations in both polluted water and plants is needed to provide the operator of a continuous phytoremediation water purification system with the information required to rotate and replace ...

    STTR Phase I 2001 Department of Energy
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