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The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. Transport of Underwater Sensor Data

    SBC: BENTHOS, INC.            Topic: N/A

    Undersea sensors require means of transporting data to an end-user. Acoustic modem networks are being developed for this purpose, but they are limited by battery power, network priorities, and requirements for clandestine operations. We propose a systemsapproach to reducing the impact on the network of moving large volumes of data, using both low rate and high rate acoustic telemetry, combined w ...

    STTR Phase I 2001 Department of DefenseNavy
  2. Development of a Truly Lattice-Matched III-Nitride Technology for

    SBC: CERMET, INC.            Topic: N/A

    Cermet, in collaboration with researchers at Georgia Institute of Technology, proposes to implement a lattice matched III-Nitride technology using existing substrates. The implementation of a lattice matched substrate promises to produce near dislocationfree III-Nitrides for the first time while the use of an existing substrate technology dramatically lowers development cost and reduces the devel ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  3. Growth of AlN Crystals

    SBC: HEXATECH            Topic: N/A

    The objective of this proposal is to demonstrate the feasibility of growing centimeter-size aluminum nitride (AlN) crystals by subliming polycrystalline AlN in nitrogen atmosphere, and to demonstrate single crystalline quality meeting or exceeding thestandards of commercially available SiC wafers. The growth process, which utilizes high temperature, subatmospheric pressure and a steep temperature ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  4. Reduced Flammability Vinyl Ester Resin Containing no Halogens for Use in Large Composite Ship Surface Structures via Nanocomposite Technology

    SBC: HYDROSIZE TECHNOLOGIES, INC.            Topic: N/A

    The objective of this proposal is to demonstrate the feasibility of a halogen free nanocomposite vinyl ester system that will provide low flammability composites. The nanocomposite system proposed will be based on commercially available vinyl ester resinsand thus should not result in a significant increase to raw material costs. Layered silicate based nanocomposites are a relatively new class of ...

    STTR Phase I 2001 Department of DefenseNavy
  5. Design, Fabrication and Testing of a Versatile Outfitting Attachment System Kit for Naval Sandwich Panels

    SBC: KaZaK Composites Incorporated            Topic: N/A

    KaZaK Composites and the University of Massachusetts-Lowell will conduct an analytical and experimental investigation of technology alternatives for mounting hardware to composite sandwich panels used in shipboard structures. The KCI/UML team will workwith Bath Iron Works to ensure that attachment system solutions developed during the program are compatible with demanding and diverse needs associa ...

    STTR Phase I 2001 Department of DefenseNavy
  6. A Revolutionary Hybrid Pultrusion/VARTM Process for Making Very Large Two-Sided Composite Structures Exhibiting Bending-Twisting Coupling

    SBC: KaZaK Composites Incorporated            Topic: N/A

    KaZaK Composites and Stanford University propose to design, develop and demonstrate a prototype bending-twisting-coupled composite rudder for the DDG 51. The Phase I design and process development effort will include classical laminated plate theory,finite element analysis and VARTM mold flow analysis. Test structures will be fabricated by two different methods during Phase I. First, an approximat ...

    STTR Phase I 2001 Department of DefenseNavy
  7. High IP3 AlGaN/GaN HEMT LNAs on Silicon

    SBC: Nitronex Corporation            Topic: N/A

    The phase II proposed effort continues our studies initiated under our phase I work entitled Nitride Semiconductor Substrates. Having demonstrated the ability to produce large area (100-mm) GaN-on-silicon, Nitronex now proposes to advance the technologytowards fabrication and commercialization of X-band High IP3 AlGaN/GaN HEMT Low Noise Amplifiers (LNAs) on silicon. Our goals are to demonstrate ...

    STTR Phase II 2001 Department of DefenseNavy
  8. Improved SiC Materials for High Power Electronics

    SBC: PHOENIX INNOVATION, INC.            Topic: N/A

    Silicon has long been the semiconductor of choice for high-voltage power electronic applications. Recently, SiC has attracted attention because SiC is projected to have better performance than silicon. [1] SiC power switching devices have yet to becommercialized, largely due to SiC crystal defects, most notably the device-killing micropipe defect, which does not permit high total current parts t ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  9. A Tunable Interferometric Random Optical Cross-Switch

    SBC: Scientific Solutions, Inc.            Topic: N/A

    A random access, solid-state, optical cross-switch capable of 770 channel discrimination in the telecommunications C-band is designed and proven as an alternative to current thin-film WDM devices and as a mechanically robust alternative tomicroelectromechanical (MEMS) WDM devices. The device may be used in multiplexing (mux), demultiplexing (demux), or complete cross-switch configurations, and is ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  10. Novel heterojunction diodes for High Power Electronics

    SBC: PHOTRONIX            Topic: N/A

    The wide-bandgap semiconductors GaN and SiC hold great promise for high temperature and highpower electronic devices. This is due to the attractive properties these materials possess, such as wide energy bandgaps, high breakdown fields, high thermalconductivities, and high saturated electron velocities. In addition, GaN and SiC have adequate electron mobilities and can readily be doped n and p ty ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
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