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The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. Modeling of Lithium-Ion Cell Performance

    SBC: GLOBAL TECHNOLOGY CONNECTION, INC.            Topic: MDA10T004

    Global Technology Connection, Inc., in collaboration with academic partners, Georgia Tech"s Center for Innovative Battery and Fuel Cell Technologies, Penn State University, and industrial partner Eagle Picher propose to create a physics-based modeling for predicting the life performance of Low and Middle Earth Orbit (LEO/MEO) Lithium-ion cells. The relationships between solid-electrolyte interpha ...

    STTR Phase I 2011 Department of DefenseMissile Defense Agency
  2. High-Speed Three-Channel Photonic Time Delay Unit

    SBC: AGILTRON, INC.            Topic: MDA08T012

    An innovative, super-miniature, fast-switching array-based photonic time delay device is being developed for the active electronically scanned-array (AESA) MDA and Navy radars. The design is based on the fast electro-optic effect, the super miniature fiber-lens collimation array, and the existing WDM photonic true time delay technologies. In Phase I Agiltron has successfully demonstrated the core ...

    STTR Phase II 2011 Department of DefenseMissile Defense Agency
  3. Development of a Truly Lattice-Matched III-Nitride Technology for

    SBC: CERMET, INC.            Topic: N/A

    Cermet, in collaboration with researchers at Georgia Institute of Technology, proposes to implement a lattice matched III-Nitride technology using existing substrates. The implementation of a lattice matched substrate promises to produce near dislocationfree III-Nitrides for the first time while the use of an existing substrate technology dramatically lowers development cost and reduces the devel ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  4. Novel Programmable Optical Interconnects for Optoelectronic Packaging

    SBC: NEW SPAN OPTO-TECHNOLOGY, INC.            Topic: N/A

    Optical interconnects are required, for high speed opto-electronic packaged computing systems for fast image data processing for missile interception and target identification. They are also useful for fast access to large intelligent database. However,low cost polymer waveguide optical intercornnects and other waveguide interconnect lines suffer from packaging difficulty of waveguide interconnect ...

    STTR Phase II 2001 Department of DefenseMissile Defense Agency
  5. Novel Programmable Optical Interconnects for Optoelectronic Packaging

    SBC: NEW SPAN OPTO-TECHNOLOGY, INC.            Topic: N/A

    Optical interconnects are required, for high speed opto-electronic packaged computing systems for fast image data processing for missile interception and target identification. They are also useful for fast access to large intelligent database. However,low cost polymer waveguide optical intercornnects and other waveguide interconnect lines suffer from packaging difficulty of waveguide interconnect ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  6. Improved SiC Materials for High Power Electronics

    SBC: PHOENIX INNOVATION, INC.            Topic: N/A

    Silicon has long been the semiconductor of choice for high-voltage power electronic applications. Recently, SiC has attracted attention because SiC is projected to have better performance than silicon. [1] SiC power switching devices have yet to becommercialized, largely due to SiC crystal defects, most notably the device-killing micropipe defect, which does not permit high total current parts t ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  7. A Tunable Interferometric Random Optical Cross-Switch

    SBC: Scientific Solutions, Inc.            Topic: N/A

    A random access, solid-state, optical cross-switch capable of 770 channel discrimination in the telecommunications C-band is designed and proven as an alternative to current thin-film WDM devices and as a mechanically robust alternative tomicroelectromechanical (MEMS) WDM devices. The device may be used in multiplexing (mux), demultiplexing (demux), or complete cross-switch configurations, and is ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  8. Novel heterojunction diodes for High Power Electronics

    SBC: PHOTRONIX            Topic: N/A

    The wide-bandgap semiconductors GaN and SiC hold great promise for high temperature and highpower electronic devices. This is due to the attractive properties these materials possess, such as wide energy bandgaps, high breakdown fields, high thermalconductivities, and high saturated electron velocities. In addition, GaN and SiC have adequate electron mobilities and can readily be doped n and p ty ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  9. High Power Gallium Nitride HEMT Prepared by Ion Implantatio

    SBC: Implant Sciences Corporation            Topic: N/A

    Implant Sciences Corporation proposes to develop a superior power transistor design based on ion implanted nitride semiconductor materials which will be produced at Howard University. Our lateral device design features an inverted GaN channel with the AlGaN charge supply layer doped by ion implantation. Ion implantation allows selective area doping, which will let us create for the first time an u ...

    STTR Phase I 1998 Department of DefenseMissile Defense Agency
  10. Tooling-Free MMC Casting by Combining 3-D Printing of Ceram

    SBC: METAL MATRIX CAST COMPOSITES, LLC (DBA M            Topic: N/A

    Three-dimensional printed preforms will be used as mold patterns for MMCC's high-density, pressure resistant, castable refractory. Hard tooling will be eliminated from the Advanced Pressure Infiltration Casting process (APIC ). Cost for Al/Sic electronic housings will be slashed 75% over conventional pressure casting. Complex parts will be easily manufactured. Design modifications can be quickly i ...

    STTR Phase I 1998 Department of DefenseMissile Defense Agency
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