Award Data

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The Award database is continually updated throughout the year. As a result, data for FY19 is not expected to be complete until September, 2020.

  1. Innovative Hardware Technologies for Electromagnetic Attack Rejection in Ballistic Missile Defense System (BMDS) Radars

    SBC: Imaging Systems Technology, Inc.            Topic: MDA10T001

    Under this STTR Imaging Systems Technology (IST) will apply novel Plasma-shell technology and expertise with gas plasma systems to shield and protect BMDS Radar. Plasma-shells are tiny hollow gas encapsulating shells. When energy is applied across the shell, the gas inside ionizes into a plasma. Theory of plasma-electromagnetic (EM) field interaction shows that, under appropriate conditions, pl ...

    STTR Phase I 2011 Department of DefenseMissile Defense Agency
  2. Modeling of Lithium-Ion Cell Performance

    SBC: GLOBAL TECHNOLOGY CONNECTION, INC.            Topic: MDA10T004

    Global Technology Connection, Inc., in collaboration with academic partners, Georgia Tech"s Center for Innovative Battery and Fuel Cell Technologies, Penn State University, and industrial partner Eagle Picher propose to create a physics-based modeling for predicting the life performance of Low and Middle Earth Orbit (LEO/MEO) Lithium-ion cells. The relationships between solid-electrolyte interpha ...

    STTR Phase I 2011 Department of DefenseMissile Defense Agency
  3. Low Defect Density Mercury Cadmium Telluride on Silicon by Bulk Layer Transfer

    SBC: Srico Inc            Topic: MDA11T002

    Mercury Cadmium Telluride (MCT) has been described as one of the most technologically significant semiconductor materials and is the most widely used material for long wave infrared (LWIR) imaging. The current challenge is to produce MCT over large focal plane array size at low cost and high reliability without compromising sensitivity or noise performance. MCT on silicon substrates is highly attr ...

    STTR Phase I 2011 Department of DefenseMissile Defense Agency
  4. High-Speed Three-Channel Photonic Time Delay Unit

    SBC: AGILTRON, INC.            Topic: MDA08T012

    An innovative, super-miniature, fast-switching array-based photonic time delay device is being developed for the active electronically scanned-array (AESA) MDA and Navy radars. The design is based on the fast electro-optic effect, the super miniature fiber-lens collimation array, and the existing WDM photonic true time delay technologies. In Phase I Agiltron has successfully demonstrated the core ...

    STTR Phase II 2011 Department of DefenseMissile Defense Agency
  5. Development of a Truly Lattice-Matched III-Nitride Technology for

    SBC: CERMET, INC.            Topic: N/A

    Cermet, in collaboration with researchers at Georgia Institute of Technology, proposes to implement a lattice matched III-Nitride technology using existing substrates. The implementation of a lattice matched substrate promises to produce near dislocationfree III-Nitrides for the first time while the use of an existing substrate technology dramatically lowers development cost and reduces the devel ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  6. Carbon Nanotubes for Electromagnetic Interference Shielding

    SBC: MATERIALS RESEARCH INSTITUTE, LLC            Topic: N/A

    This STTR Phase I Program will test a processing scheme for fabricating a polymer-based nanocomposite material with significant electrical conductivity for electromagnetic interference (EMI) shielding of electronic components and signal wires. The highconductivity of the nanocomposite material is introduced by a nanophase inclusion of a class of cost-effective vapor-grown carbon nanotubes. In th ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  7. Improved SiC Materials for High Power Electronics

    SBC: PHOENIX INNOVATION, INC.            Topic: N/A

    Silicon has long been the semiconductor of choice for high-voltage power electronic applications. Recently, SiC has attracted attention because SiC is projected to have better performance than silicon. [1] SiC power switching devices have yet to becommercialized, largely due to SiC crystal defects, most notably the device-killing micropipe defect, which does not permit high total current parts t ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  8. A Tunable Interferometric Random Optical Cross-Switch

    SBC: Scientific Solutions, Inc.            Topic: N/A

    A random access, solid-state, optical cross-switch capable of 770 channel discrimination in the telecommunications C-band is designed and proven as an alternative to current thin-film WDM devices and as a mechanically robust alternative tomicroelectromechanical (MEMS) WDM devices. The device may be used in multiplexing (mux), demultiplexing (demux), or complete cross-switch configurations, and is ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  9. Band Gap Engineering of Advanced Photodetectors via Quantum Size Effects in SiC Nanostructures

    SBC: TAITECH, INC.            Topic: N/A

    The proposed research addresses the critical need for the development of an advanced sensor technology for ballistic missile defense applications. The proposal is aimed at investigating the unique physical processes which occur in wide band gap (WBG)semiconductor nanostructures due to quantum confinement effects. Silicon carbide, an attractive high-temperature, radiation hard semiconductor, whic ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  10. Novel heterojunction diodes for High Power Electronics

    SBC: VIATRONIX            Topic: N/A

    The wide-bandgap semiconductors GaN and SiC hold great promise for high temperature and highpower electronic devices. This is due to the attractive properties these materials possess, such as wide energy bandgaps, high breakdown fields, high thermalconductivities, and high saturated electron velocities. In addition, GaN and SiC have adequate electron mobilities and can readily be doped n and p ty ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
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