Award Data

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The Award database is continually updated throughout the year. As a result, data for FY19 is not expected to be complete until September, 2020.

  1. CNT Based Microstrip Plasma Limiter

    SBC: ACCURATE AUTOMATION CORPORATION            Topic: MDA10T001

    Accurate Automation Corporation will develop a carbon nanotube based microstrip plasma limiter suitable for inclusion on RF printed circuit boards used on the front-end of an X-Band phased-array receiver. This device will capitalize on the ability to use carbon nanotubes to reduce the size and cost of an RF limiter while dramatically increasing the performance. Specific attention will be focused o ...

    STTR Phase I 2011 Department of DefenseMissile Defense Agency
  2. High-Speed Three-Channel Photonic Time Delay Unit

    SBC: AGILTRON, INC.            Topic: MDA08T012

    An innovative, super-miniature, fast-switching array-based photonic time delay device is being developed for the active electronically scanned-array (AESA) MDA and Navy radars. The design is based on the fast electro-optic effect, the super miniature fiber-lens collimation array, and the existing WDM photonic true time delay technologies. In Phase I Agiltron has successfully demonstrated the core ...

    STTR Phase II 2011 Department of DefenseMissile Defense Agency
  3. N/A

    SBC: Electron Power Systems, Inc.            Topic: N/A

    N/A

    STTR Phase I 1999 Department of DefenseMissile Defense Agency
  4. N/A

    SBC: Electron Power Systems, Inc.            Topic: N/A

    N/A

    STTR Phase II 1999 Department of DefenseMissile Defense Agency
  5. Simultaneous Spatial/Spectral Infrared Sensor (SSIRS)

    SBC: I Technology Applications            Topic: N/A

    N/A

    STTR Phase I 1999 Department of DefenseMissile Defense Agency
  6. Novel AlGaN/GaN Heterojunction Bipolar Transistor with Enhanced p-type Doped Base

    SBC: NZ APPLIED TECHNOLOGIES CORP.            Topic: N/A

    N/A

    STTR Phase I 1999 Department of DefenseMissile Defense Agency
  7. Radiation Hard, Nonvalatile Magnetic RAM Using Novel Magnetic Tunneling-Junction Device on Silicon Semiconductor

    SBC: Spinix Corporation            Topic: N/A

    N/A

    STTR Phase I 1999 Department of DefenseMissile Defense Agency
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