You are here

Award Data

For best search results, use the search terms first and then apply the filters
Reset

The Award database is continually updated throughout the year. As a result, data for FY23 is not expected to be complete until September, 2024.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. High-Speed Three-Channel Photonic Time Delay Unit

    SBC: AGILTRON, INC.            Topic: MDA08T012

    An innovative, super-miniature, fast-switching array-based photonic time delay device is being developed for the active electronically scanned-array (AESA) MDA and Navy radars. The design is based on the fast electro-optic effect, the super miniature fiber-lens collimation array, and the existing WDM photonic true time delay technologies. In Phase I Agiltron has successfully demonstrated the core ...

    STTR Phase II 2011 Department of DefenseMissile Defense Agency
  2. N/A

    SBC: Electron Power Systems, Inc.            Topic: N/A

    N/A

    STTR Phase I 1999 Department of DefenseMissile Defense Agency
  3. N/A

    SBC: Electron Power Systems, Inc.            Topic: N/A

    N/A

    STTR Phase II 1999 Department of DefenseMissile Defense Agency
  4. Simultaneous Spatial/Spectral Infrared Sensor (SSIRS)

    SBC: I Technology Applications            Topic: N/A

    N/A

    STTR Phase I 1999 Department of DefenseMissile Defense Agency
  5. Lightweight Nanocomposites for Missile Defense Applications

    SBC: Mers, Llc            Topic: N/A

    The key requirement for nanocomposite formation is dispersion of clay particles at nm length scales in polymer matrices, which is not trivial. Such a molecular-level dispersion necessitates complete exfoliation of clay particles, which occurs sporadicallywith the fabrication procedures currently in use. Based on a previously demonstrated concept, we propose to develop a novel nanocomposite fabri ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  6. Novel AlGaN/GaN Heterojunction Bipolar Transistor with Enhanced p-type Doped Base

    SBC: NZ APPLIED TECHNOLOGIES CORP.            Topic: N/A

    N/A

    STTR Phase I 1999 Department of DefenseMissile Defense Agency
  7. PIBO Dielectric Film for Advanced Microelectronics Packaging

    SBC: OXAZOGEN, INC.            Topic: N/A

    Electronics products in applications including mobile communications, work stations, small computers, automotive controls, and aerospace and military weapons systems are moving relentlessly toward smaller, thinner, and lighter formats in lower costpackages. Interconnect density requirements in these products are rapidly outstripping that which is achievable through fabrication of traditional mult ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  8. Improved SiC Materials for High Power Electronics

    SBC: PHOENIX INNOVATION, INC.            Topic: N/A

    Silicon has long been the semiconductor of choice for high-voltage power electronic applications. Recently, SiC has attracted attention because SiC is projected to have better performance than silicon. [1] SiC power switching devices have yet to becommercialized, largely due to SiC crystal defects, most notably the device-killing micropipe defect, which does not permit high total current parts t ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  9. TeraHertz High-Reliability InP DHBT Technology for Millimeter-Wave Amplifiers and Ultra-High Speed Digital ICs

    SBC: RJM Semiconductor, L.L.C.            Topic: N/A

    RJM Semiconductor and NASA JPL propose to demonstrate the world's fastest InP transistor technology with cut-off frequencies approaching 1TeraHertz combined with the essential device reliability required for real systems deployment. The approach will adopta new patent-pending Self-Aligned HBT Process invented at RJM Semiconductor that employs stable, non-diffusing Carbon-doped bases, high breakdow ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  10. A Tunable Interferometric Random Optical Cross-Switch

    SBC: Scientific Solutions, Inc.            Topic: N/A

    A random access, solid-state, optical cross-switch capable of 770 channel discrimination in the telecommunications C-band is designed and proven as an alternative to current thin-film WDM devices and as a mechanically robust alternative tomicroelectromechanical (MEMS) WDM devices. The device may be used in multiplexing (mux), demultiplexing (demux), or complete cross-switch configurations, and is ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
US Flag An Official Website of the United States Government