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Award Data
The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.
Download all SBIR.gov award data either with award abstracts (290MB)
or without award abstracts (65MB).
A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.
The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.
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N/A
SBC: Electron Power Systems, Inc. Topic: N/AN/A
STTR Phase I 1999 Department of DefenseMissile Defense Agency -
N/A
SBC: Electron Power Systems, Inc. Topic: N/AN/A
STTR Phase II 1999 Department of DefenseMissile Defense Agency -
Simultaneous Spatial/Spectral Infrared Sensor (SSIRS)
SBC: I Technology Applications Topic: N/AN/A
STTR Phase I 1999 Department of DefenseMissile Defense Agency -
Lightweight Nanocomposites for Missile Defense Applications
SBC: Mers, Llc Topic: N/AThe key requirement for nanocomposite formation is dispersion of clay particles at nm length scales in polymer matrices, which is not trivial. Such a molecular-level dispersion necessitates complete exfoliation of clay particles, which occurs sporadicallywith the fabrication procedures currently in use. Based on a previously demonstrated concept, we propose to develop a novel nanocomposite fabri ...
STTR Phase I 2001 Department of DefenseMissile Defense Agency -
Novel AlGaN/GaN Heterojunction Bipolar Transistor with Enhanced p-type Doped Base
SBC: NZ APPLIED TECHNOLOGIES CORP. Topic: N/AN/A
STTR Phase I 1999 Department of DefenseMissile Defense Agency -
PIBO Dielectric Film for Advanced Microelectronics Packaging
SBC: OXAZOGEN, INC. Topic: N/AElectronics products in applications including mobile communications, work stations, small computers, automotive controls, and aerospace and military weapons systems are moving relentlessly toward smaller, thinner, and lighter formats in lower costpackages. Interconnect density requirements in these products are rapidly outstripping that which is achievable through fabrication of traditional mult ...
STTR Phase I 2001 Department of DefenseMissile Defense Agency -
Improved SiC Materials for High Power Electronics
SBC: PHOENIX INNOVATION, INC. Topic: N/ASilicon has long been the semiconductor of choice for high-voltage power electronic applications. Recently, SiC has attracted attention because SiC is projected to have better performance than silicon. [1] SiC power switching devices have yet to becommercialized, largely due to SiC crystal defects, most notably the device-killing micropipe defect, which does not permit high total current parts t ...
STTR Phase I 2001 Department of DefenseMissile Defense Agency -
A Tunable Interferometric Random Optical Cross-Switch
SBC: Scientific Solutions, Inc. Topic: N/AA random access, solid-state, optical cross-switch capable of 770 channel discrimination in the telecommunications C-band is designed and proven as an alternative to current thin-film WDM devices and as a mechanically robust alternative tomicroelectromechanical (MEMS) WDM devices. The device may be used in multiplexing (mux), demultiplexing (demux), or complete cross-switch configurations, and is ...
STTR Phase I 2001 Department of DefenseMissile Defense Agency -
Radiation Hard, Nonvalatile Magnetic RAM Using Novel Magnetic Tunneling-Junction Device on Silicon Semiconductor
SBC: Spinix Corporation Topic: N/AN/A
STTR Phase I 1999 Department of DefenseMissile Defense Agency -
Novel heterojunction diodes for High Power Electronics
SBC: PHOTRONIX Topic: N/AThe wide-bandgap semiconductors GaN and SiC hold great promise for high temperature and highpower electronic devices. This is due to the attractive properties these materials possess, such as wide energy bandgaps, high breakdown fields, high thermalconductivities, and high saturated electron velocities. In addition, GaN and SiC have adequate electron mobilities and can readily be doped n and p ty ...
STTR Phase I 2001 Department of DefenseMissile Defense Agency